Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR MJE 540 Search Results

    TRANSISTOR MJE 540 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MJE 540 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CPH3123

    Abstract: No abstract text available
    Text: CPH3123 SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 520.0f NF 1 IKF 1 NE 2 NR 1 IKR 850.0m NC 2 IRB 40.00m RE 42.00m XTB 1.6 XTI 3 VJE 750.0m TF 350p VTF 1.000K PTF VJC 540.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A


    Original     		PDF CPH3123 CPH3123

    r5609

    Abstract: 8E-15 A741 THS4001 bf 333 transistor 8E15 BR-049 296E-18 BF100 transistor SLOA029
    Text: Application Report SLOA029 - October 1999 THS4001 SPICE Model Performance James Karki ABSTRACT This document outlines the SPICE model of the THS4001 high-speed monolithic operational amplifier. General information about the model file structure, performance comparison,


    Original     		PDF SLOA029 THS4001 com/sc/docs/products/analog/ths4001 r5609 8E-15 A741 bf 333 transistor 8E15 BR-049 296E-18 BF100 transistor

    H604

    Abstract: FPS001 IBM POS power supply schematics AN1402 h607 H600 H606 MC10H600 H603 h601 transistor
    Text: AN1402 Application Note MC10/100H600 Translator Family I/O SPICE Modeling Kit Prepared by Debbie Beckwith ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect situations for designs which utilize the translator circuits


    Original     		PDF AN1402 MC10/100H600 MC10H600 AN1402/D DL140 H604 FPS001 IBM POS power supply schematics AN1402 h607 H600 H606 H603 h601 transistor

    2SC3953-SPICE

    Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
    Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f


    Original     		PDF 12A02CH-SPICE 12A02CH 12A02CH 2SB1205 2SB1205 2SC3953-SPICE 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE

    RF POWER TRANSISTOR NPN 3GHz

    Abstract: NPN marking MCs 1741 transistor equivalent table BGB540-Chip BFP540 spice
    Text: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , A u g . 2 0 0 1 BGB 540 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-16 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF D-81541 BGB540 BGB540 BFP540. GPS05605 RF POWER TRANSISTOR NPN 3GHz NPN marking MCs 1741 transistor equivalent table BGB540-Chip BFP540 spice

    SPICE PARAMETER, sanyo, bipolar transistor

    Abstract: 500N 50P 2SD1815
    Text: 2SD1815 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 730.0f NF 1 IKF 1.7 NE 2 NR 1 1 IKR NC 2 IRB 20.00m RE 33.00m XTB 2 XTI 3 VJE 650.0m TF 780p VTF 75 PTF VJC 600.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm V


    Original     		PDF 2SD1815 SPICE PARAMETER, sanyo, bipolar transistor 500N 50P 2SD1815

    BFP-540

    Abstract: VPS05605 transistor BO 540 Transistor MJE 540
    Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB  Gold metallization for high reliability 2  SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05605 OT-343 50Ohm -j100 Jun-09-2000 BFP-540 VPS05605 transistor BO 540 Transistor MJE 540

    VPS05605

    Abstract: No abstract text available
    Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB  Gold metallization for high reliability 2  SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05605 OT-343 50Ohm -j100 Oct-27-1999 VPS05605

    DSUB111

    Abstract: H124 PNT02 H124-H125 XR2444 AN1598 npn TTL LOGIC pspice model designing with mecl 10,000 H352 H351
    Text: AN1598 Application Note H124, 125, 350-352 Translator I/O SPICE Modelling Kit Prepared by Debbie Beckwith Andrea Diermeier ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect situations for designs which utilize the translator circuits of


    Original     		PDF AN1598 MECL10KH AN1598/D DL140 DSUB111 H124 PNT02 H124-H125 XR2444 AN1598 npn TTL LOGIC pspice model designing with mecl 10,000 H352 H351

    data sheet transistor 9018 NPN

    Abstract: 500E 800E MDC5001 MDC5001T1 MRF941 MRF9411 motorola rf spice
    Text: MOTOROLA Order this document by MDC5001T1/D SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer with Enable • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast


    Original     		PDF MDC5001T1/D MDC5001T1 data sheet transistor 9018 NPN 500E 800E MDC5001 MDC5001T1 MRF941 MRF9411 motorola rf spice

    TF-450

    Abstract: BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am


    Original     		PDF ZTX1047A 100ms NY11725 TF-450 BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761

    BFG425W

    Abstract: amplifier 2606 BFG425 BFG21W STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS
    Text: APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT • Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W is a double polysilicon bipolar power


    Original     		PDF BFG425W BFG21W BFG21W 603508/01/pp12 amplifier 2606 BFG425 STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS

    MC100EL92

    Abstract: AN1560 EL90 SWITCH XCJC AN1503 DL140 LVEL11 LVEL16 motorola LOGIC
    Text: AN1560 Application Note Low Voltage ECLinPS SPICE Modeling Kit Prepared by Cleon Petty Motorola Logic Applications Engineering ECLinPS and ECLinPS Lite are trademarks of Motorola, Inc. 6/97  Motorola, Inc. 1997 1 REV 1 AN1560 Low Voltage ECLinPS SPICE Modeling Kit


    Original     		PDF AN1560 DL140 AN1560/D MC100EL92 AN1560 EL90 SWITCH XCJC AN1503 LVEL11 LVEL16 motorola LOGIC

    Untitled

    Abstract: No abstract text available
    Text: START540 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE


    Original     		PDF START540 24dBm 45GHz OT343 OT343 START540TR START540 500MHz-5GHz

    BF320

    Abstract: transistor Bf 981 START540 START540TR 158E-1 transistor BF 506
    Text: START540 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE


    Original     		PDF START540 24dBm 45GHz OT343 OT343 START540TR START540 BF320 transistor Bf 981 START540TR 158E-1 transistor BF 506

    NE68135

    Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
    Text: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o


    Original     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009

    transistor Bf 981

    Abstract: START540 START540TR BF320 SPECTRE MODEL transistor bf 968
    Text: START540 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE


    Original     		PDF START540 24dBm 45GHz OT343 OT343 START540TR START540 transistor Bf 981 START540TR BF320 SPECTRE MODEL transistor bf 968

    BJT characteristics

    Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
    Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e


    Original     		PDF NE681 BJT characteristics NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE68100 NE68118 NE68119

    transistor "micro-x" "marking" 102

    Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
    Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e


    Original     		PDF NE681 transistor "micro-x" "marking" 102 laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009

    BF320

    Abstract: BF 320 START540 START540TR transistor BO 540 BS 88.4 L-035
    Text: START540 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE


    Original     		PDF START540 24dBm 45GHz OT343 OT343 START540TR START540 BF320 BF 320 START540TR transistor BO 540 BS 88.4 L-035

    2SC3583

    Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 24-Hour 2SC3583 kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE68139 NE68118

    TF-450

    Abstract: transistor BF 257 FZT1047A DSA003675 fzt10
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1047A ISSUE 1 - AUGUST 1997 FEATURES * * * * * * VCEO = 10V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE sat = 44mΩ at 5A


    Original     		PDF OT223 FZT1047A OT223 TF-450 transistor BF 257 FZT1047A DSA003675 fzt10

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    TF-450

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching


    OCR Scan     		PDF ZTX1047A NY11725 JS70S7Ã TF-450