transistor Electronic ballast
Abstract: 15A POWER TRANSISTOR FOR SMPS MJE13003 Electronic ballast 11W MJE13005 mje13005 ballast mje13003 ballast MJE13007 electronic ballast MJE13005 electronic ballast with MJE13007
Text: “Quality First” First” First & Best KEC Power Transistor MJE Series Device APP MKTMKT-G “Quality First” First” First & Best Power Transistor (MJE Series) ▣ Application High Voltage Switch Mode ▣ Feature High Speed Switching High Voltage Capability
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O-126
O-220IS
O-220AB
O-126
O-220IS
O-220AB
KTC5027/F
STBV32
FJN13003
BUJ100
transistor Electronic ballast
15A POWER TRANSISTOR FOR SMPS
MJE13003
Electronic ballast 11W
MJE13005
mje13005 ballast
mje13003 ballast
MJE13007
electronic ballast MJE13005
electronic ballast with MJE13007
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221D
Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art
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MJE18004
MJF18004
MJE/MJF18004
r14525
MJE18004/D
221D
MJE18004
MJE210
MJF18004
MPF930
MTP8P10
MUR105
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mjf18004
Abstract: No abstract text available
Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state−of−the−art
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MJE/MJF18004
MJE18004
MJF18004
AN1040.
mjf18004
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mje18008
Abstract: MJE/MJF18008
Text: ON Semiconductor MJE18008 * MJF18008 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state−of−the−art
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MJE/MJF18008
MJE18008
MJF18008
O-220
MJF1800ge
AN1040.
mje18008
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221D
Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105
Text: ON Semiconductor MJE18008 * MJF18008 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state–of–the–art
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MJE18008
MJF18008
MJE/MJF18008
r14525
MJE18008/D
221D
MJE18008
MJE210
MJF18008
MPF930
MTP8P10
MUR105
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MJE18008G
Abstract: 221D MJE18008 MJF18008 MJF18008G MTP8P10
Text: MJE18008G, MJF18008G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.
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MJE18008G,
MJF18008G
MJE/MJF18008G
O-220
O-220
MJF18008,
E69369
MJE18008/D
MJE18008G
221D
MJE18008
MJF18008
MJF18008G
MTP8P10
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221D
Abstract: MJE18009 MJF18009 MPF930 MTP8P10 MUR105
Text: ON Semiconductort MJE18009 MJF18009 SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated SWITCHMODE Power
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MJE18009
MJF18009
MJE/MJF18009
r14525
MJE18009/D
221D
MJE18009
MJF18009
MPF930
MTP8P10
MUR105
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mjf*8004
Abstract: MJF18004G MJE18004G mje18004 MJE1800
Text: MJE18004G, MJF18004G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.
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MJE18004G,
MJF18004G
MJE/MJF18004G
O-220
MJF18004,
E69369
MJE18004/D
mjf*8004
MJE18004G
mje18004
MJE1800
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MJF18004G
Abstract: MJE18004G MJF18004 MTP8P10 221D MJE18004
Text: MJE18004G, MJF18004G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.
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MJE18004G,
MJF18004G
MJE/MJF18004G
O-220
MJE18004/D
MJF18004G
MJE18004G
MJF18004
MTP8P10
221D
MJE18004
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transistor mje13007 equivalent
Abstract: Motorola AN222A MJF13007 MJE13007D motorola an569 thermal 221D AN719 AN873 AN875 MJE13007
Text: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching
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MJE13007/D
MJE13007
MJF13007
MJE/MJF13007
MJE13007/D*
transistor mje13007 equivalent
Motorola AN222A
MJF13007
MJE13007D
motorola an569 thermal
221D
AN719
AN873
AN875
MJE13007
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Untitled
Abstract: No abstract text available
Text: MJE18008G, MJF18008G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.
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MJE18008G,
MJF18008G
MJE/MJF18008G
O-220
MJF18008,
E69369
MJE18008/D
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MJF18004
Abstract: MJE18004 221D MJE18004G MJF18004G MTP8P10 mjf*8004
Text: MJE18004, MJF18004 Preferred Device SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.
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MJE18004,
MJF18004
MJE/MJF18004
O-220ot
MJE18004/D
MJF18004
MJE18004
221D
MJE18004G
MJF18004G
MTP8P10
mjf*8004
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221D
Abstract: MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009 Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light
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MJE18009/D
MJE18009
MJF18009
MJE/MJF18009
E69369
MJE18009/D*
221D
MJE18009
MJE210
MJF18009
MPF930
MTP12N10
MTP8P10
MUR105
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DC input switchmode electronic ballast with 12
Abstract: motorola mje 221D MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009 Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light
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MJE18009/D
MJE18009
MJF18009
MJE/MJF18009
E69369
MJE18009/D*
DC input switchmode electronic ballast with 12
motorola mje
221D
MJE18009
MJE210
MJF18009
MPF930
MTP12N10
MTP8P10
MUR105
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ikf68
Abstract: 1159m transistor 1002 rcx 1002
Text: MAX3640 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic
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MAX3640
test11M02
HDE113032
181E-017
HDE113032
ikf68
1159m
transistor 1002
rcx 1002
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T12B1
Abstract: h607 H603 1803e H606 H600 H604 MC10H600 BF 273 transistor h601
Text: AN1402/D MC10/100H640 Translator Family I/O SPICE Modeling Kit Prepared by: Debbie Beckwith ECL Applications Engineering http://onsemi.com APPLICATION NOTE structure, respectively. Six different output buffers represent all of the output buffers for the H60x series of translators.
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AN1402/D
MC10/100H640
r14525
T12B1
h607
H603
1803e
H606
H600
H604
MC10H600
BF 273 transistor
h601
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E 13009 2
Abstract: transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l
Text: / b aS3T31 001=113? 1 DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use
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aS3T31
O-220
MJE13008
bb53131
E 13009 2
transistor E 13009
EB 13009 D
e 13009 l
p 13009
D 13009 K
transistor mje
EB 13009
e 13009 d
transistor E 13009 l
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Transistors 13005 D
Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
Text: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use
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tati53
O-220
MJE13004
bS3131
T-33-73
Transistors 13005 D
Transistor MJE 5331
13005 2 transistor
hf 13005
MJE 5331
transistor E 13005
EB 13005
E 13005 L
D 13005 K
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MJE2160
Abstract: MJE1090 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103
Text: MJE2090 H, MJE2093 SILICON For Specifications, See MJE1090 Data. MJE2100 th r u MJE2103 (SILICON) For Specifications, See MJE 1090 Data. MJE2160 (silicon) PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR 1.5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for line operated audio output amplifier applications
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MJE2090
MJE2093
MJE1090
MIE2100
MJE2103
MJE2160
SeeAN-415)
MJE2160
power transistor audio amplifier 500 watts
MJE2090
MJE210
MJE2093
MJE2103
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 Designer’s Data Sheet SW ITCHMODE ™NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state-of-the-art die designed for
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MJE18009/D
MJE/MJF18009
221D-02
E69369
2PHX33547C-1
JE18009/D
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PDF
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MJF18008
Abstract: No abstract text available
Text: Order this data sheet by MJE18008/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18008 M JF18008 Designer’s Data Sheet SWITCHMODE ™ M otorola Preferred D e vic e s NPN Bipolar Pow er Transistor For Sw itching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use
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MJE18008/D
MJE/MJF18008
MJF18008,
221D-01
221D-02
MJF18008
O-220
E69369
MJE18008
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 D esigner’s Data Sheet SWITCHMODE™ NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific s ta te -o f-th e -a rt die designed for
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MJE18009/D
JF18009
MJE/MJF18009
221D-02
O-220
E69369
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PDF
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JF18004
Abstract: MOTOROLA JF18004 JE18004 MJF18004
Text: Order this data sheet by M JE18004/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18004 M JF18004 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Power Transistor For Sw itching Pow er Supply Applications The MJE/MJF18004 have an applications specific state-of-the-art die designed for use
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JE18004/D
MJE/MJF18004
2PHX25388C-4
MJE18004/D
JF18004
MOTOROLA JF18004
JE18004
MJF18004
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Untitled
Abstract: No abstract text available
Text: Orc er ' Y s c’a 'a s'ioe* MOTOROLA i bocíí.': SEMICONDUCTOR TECHNICAL DATA MJ E 18002 M JF18002 Designer’s Data Sheet SWITCHMODE™ M otorola Preferred D e v ice s NPN B ipolar Pow er Transistor For S w itching Pow er Supply A pplications The MJE/MJF18002 have an applications specific state-of-the-art die designed for use
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MJE/MJF18002
O-220
O-220
MJF18002,
21A-06
O-220AB
221D-01
221D-02.
MJF18002
221D-02
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