TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Search Results

TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TCR2EF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR2LF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR3DF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV)

TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BFR99A Abstract: BRF99A bfr99 Text: BFR99A WIDE BAND VHF/UHF AMPLIFIER . . . . SILICON PLANAR EPITAXAL TRANSISTOR TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONS DESCRIPTION The BRF99A is a silicon planar epitaxial PNP transistor produced using interdigitated base emitter geometry. It is particulary designed for use in wide band	Original	BFR99A BRF99A BFR99A BFY90. bfr99	PDF
npn UHF transistor 2N5179 Abstract: No abstract text available Text: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters	Original	2N5179 npn UHF transistor 2N5179	PDF
ZO 607 MA Abstract: transistor zo 607 ZO 607 transistor transistor ZO 607 MA zo 607 zo 607 MA transistor 2SC4988 Text: 2SC4988 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire UPAK Features • High gain bandwidth product fT = 8.5 GHz typ • High gain, low noise figure PG = 10.5 dB typ, NF = 1.3 dB typ at f = 900 MHz 1 3 2 1. Base 2. Collector 3. Emitter	Original	2SC4988 ZO 607 MA transistor zo 607 ZO 607 transistor transistor ZO 607 MA zo 607 zo 607 MA transistor 2SC4988	PDF
TRANSISTOR marking 489 code Abstract: 2SC5218 SC-59A Hitachi DSA0014 Text: 2SC5218 Silicon NPN Epitaxial Transistor Application MPAK VHF & UHF wide band amplifier Features 3 • High gain bandwidth product fT = 9 GHz typ. • High gain, low noise figure PG = 13.0 dB typ., NF = 1.2 dB typ. at f = 900 MHz 1 2 1. Emitter 2. Base 3. Collector	Original	2SC5218 SC-59A TRANSISTOR marking 489 code 2SC5218 SC-59A Hitachi DSA0014	PDF
ZO 103 MA 75 623 Abstract: zo 103 ma 513 s12 datasheet 2SC4992 ZO 103 zo 405 if amplifire uhf amplifire Text: 2SC4992 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CMPAK–4 Features 4 • High gain bandwidth product fT = 9.5 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 3 1 2 1. Collector 2. Emitter	Original	2SC4992 ZO 103 MA 75 623 zo 103 ma 513 s12 datasheet 2SC4992 ZO 103 zo 405 if amplifire uhf amplifire	PDF
2SC5141 Abstract: 2SC5218 Hitachi DSA0014 Text: 2SC5141 Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifier SMPAK Features • High gain bandwidth product fT = 5.8 GHz typ. • High gain, low noise figure PG = 13 dB typ., NF = 1.6 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector	Original	2SC5141 2SC5141 2SC5218 Hitachi DSA0014	PDF
Untitled Abstract: No abstract text available Text: BFR106 Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers	Original	BFR106 AEC-Q101	PDF
Untitled Abstract: No abstract text available Text: B iM E D N P U C T O R « MPSH11 MMBTH11 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 pA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving	OCR Scan	MPSH11 MMBTH11 MPSH11	PDF
transistor rc4 Abstract: MMBT5179 MPS5179 Text: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common	OCR Scan	MPS5179 MMBT5179 OT-23 tS0113D transistor rc4 MMBT5179 MPS5179	PDF
bf282 Abstract: mps51 Text: S E M IC O N D U C T O R tm / MMBT5179 / PN5179 MPS5179 PN5179 MMBT5179 SOT-23 Mark: 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 \|^A to 30 m A range in common em itter or comm on base m ode of operation, and in low frequency	OCR Scan	MPS5179 MMBT5179 PN5179 MMBT5179 OT-23 28E-18 bf282 mps51	PDF
TRANSISTOR C 3223 Abstract: TRANSISTOR C 1177 BT5179 NPN power transistor spice Text: Sáfe:-O O W :Oí •v MPS5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 \|uA to 30 m A range in common em itter or common base m ode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.	OCR Scan	MPS5179 MMBT5179 MPS5179 TRANSISTOR C 3223 TRANSISTOR C 1177 BT5179 NPN power transistor spice	PDF
APC UPS CIRCUIT DIAGRAM rs 1500 Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700 Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO	OCR Scan	AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700	PDF
PHILIPS 108 CAPACITOR Abstract: BLF246 D11057A SC08a SOT121 711C SOT121 Package marking mgg Text: Philips Semiconductors Product specification VHF power MOS transistor BLF246 FEATURES PINNING -S O T121 • High power gain PIN SYMBOL • Low noise figure 1 d drain • Easy power control 2 s source • Good thermal stability 3 g gate • Withstands full load mismatch.	OCR Scan	BLF246 OT121 SC08a MGG092 OT121. 7110fl2b PHILIPS 108 CAPACITOR BLF246 D11057A SOT121 711C SOT121 Package marking mgg	PDF
Untitled Abstract: No abstract text available Text: OOETTBfci MED M l A P X Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 1 N AMER PHIL IPS/DISCRETE h^E D PIN CONFIGURATION FEATURES • High power gain • Low noise • Easy power control • Good thermal stability • Withstands full load mismatch	OCR Scan	BLF242 OT123 OT123 MCA930	PDF

g300 rev 2.0 Abstract: SL 100 NPN Transistor PN5179 transistor rc4 MMBT5179 MPS5179 TRANSISTOR C 3223 Text: MICQNDUCTGR i MPS5179 PN5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 piA to 30 mA range in common em itter or comm on base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.	OCR Scan	MPS5179 MMBT5179 PN5179 g300 rev 2.0 SL 100 NPN Transistor PN5179 transistor rc4 MMBT5179 MPS5179 TRANSISTOR C 3223	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors WM bb 5 3 R 31 Q02RR6Q 536 M APX Product specification VHF power MOS transistor BLF246 N AUER PHILIPS/DISCRETE FEATURES bRE PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	Q02RR6Q BLF246 OT121 UCA939 CA940	PDF
7z31 Abstract: Philips 809 08003 SOT123 Package sot123 PINNING-SOT123 BLF242 VHF transmitter circuit T-39-07 Text: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • Sb E 7 13 c! ' t0 7 ' BLF242 D • 711Dfl2fci 0 0 4 3 7 6 4 47T ■ P H I N PIN CONFIGURATION High power gain Low noise Easy power control	OCR Scan	BLF242 711DA2b OT123 PINNING-SOT123 7z31 Philips 809 08003 SOT123 Package sot123 PINNING-SOT123 BLF242 VHF transmitter circuit T-39-07	PDF
BLF245 Abstract: sot123 package VHF transistor amplifier circuit Text: Philips Semiconductors tb S B T B l GGSTTSB SOT M APX Product specification VHF power MOS transistor BLF245 N AUER PHILIPS/DISCRETE b^E T> PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	BLF245 OT123 -SOT123 MBAJ79 BLF245 sot123 package VHF transistor amplifier circuit	PDF
transistor zo 607 Abstract: transistor ZO 607 MA 2SC 1022 Text: HITACHI 2S C 4988-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 8.5 GHz typ • High gain, low noise figure PG = 10.5 dB typ, NF = 1.3 dB typ at f = 9 0 0 MHz Table 1 Absolute M aximum Ratings Ta = 25°C	OCR Scan	2SC4988 transistor zo 607 transistor ZO 607 MA 2SC 1022	PDF
transistor marking tT2 Abstract: No abstract text available Text: HITACHI 2SC5140-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j = 9 GHz typ. • High gain, low noise figure PG = 15 dB typ., NF = 1.6 dB typ. at f = 900 MHz 1. Emitter 2. Base	OCR Scan	2SC5140------Silicon 2SC5140 transistor marking tT2	PDF
transistor marking YD ghz Abstract: 2SC4995 z 0607 ma yd 1208 transistor m 4995 Text: HITACHI 2SC4995-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire C M P A K -4 Features • High gain bandwidth product f j = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 MHz 1. 2. 3. 4.	OCR Scan	2SC4995-----Silicon cut369 transistor marking YD ghz 2SC4995 z 0607 ma yd 1208 transistor m 4995	PDF
bje 133 resistor Abstract: No abstract text available Text: bbSB'lBl D D S T ^ M ST? • APX Philips Semiconductors Productspecifjcatj^ VHF power MOS transistor — ^ BLF244 i FEATURES N AMER PHILIPS/] ISCRETE b*]E B PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	BLF244 bje 133 resistor	PDF
Transistor BLF244 Abstract: philips Trimmer 60 pf pu enamelled copper wire BLF244 capacitor 104 ceramic bje 133 resistor Text: Philips Semiconductors bbSBIBl D D E ' m M ST7 M A P X Product specification VHF power MOS transistor BLF244 N FEATURES AMER P H IL IP S /D IS C R E T E b 'i E PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	-SOT123 BLF244 7Z21784 Transistor BLF244 philips Trimmer 60 pf pu enamelled copper wire BLF244 capacitor 104 ceramic bje 133 resistor	PDF
choke marking nb 03 Abstract: SOT121 Package BLF246 Text: Philips Semiconductors a tiS 3 R 3 1 0 0 5 TRÔD 536 APX Product specification VHF power MOS transistor BLF246 b'ìE i> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	Q05TRÃ BLF246 OT121 OT121 /CA93V choke marking nb 03 SOT121 Package BLF246	PDF

TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Search Results

TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Result Highlights (5)

TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Datasheets Context Search

BFR99A

npn UHF transistor 2N5179

ZO 607 MA

TRANSISTOR marking 489 code

ZO 103 MA 75 623

2SC5141

Untitled

Untitled

transistor rc4

bf282

TRANSISTOR C 3223

APC UPS CIRCUIT DIAGRAM rs 1500

PHILIPS 108 CAPACITOR

Untitled

g300 rev 2.0

Untitled

7z31

BLF245

transistor zo 607

transistor marking tT2

transistor marking YD ghz

bje 133 resistor

Transistor BLF244

choke marking nb 03