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    TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Search Results

    TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFR99A

    Abstract: BRF99A bfr99
    Text: BFR99A WIDE BAND VHF/UHF AMPLIFIER . . . . SILICON PLANAR EPITAXAL TRANSISTOR TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONS DESCRIPTION The BRF99A is a silicon planar epitaxial PNP transistor produced using interdigitated base emitter geometry. It is particulary designed for use in wide band


    Original     		PDF BFR99A BRF99A BFR99A BFY90. bfr99

    npn UHF transistor 2N5179

    Abstract: No abstract text available
    Text: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters


    Original     		PDF 2N5179 npn UHF transistor 2N5179

    ZO 607 MA

    Abstract: transistor zo 607 ZO 607 transistor transistor ZO 607 MA zo 607 zo 607 MA transistor 2SC4988
    Text: 2SC4988 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire UPAK Features • High gain bandwidth product fT = 8.5 GHz typ • High gain, low noise figure PG = 10.5 dB typ, NF = 1.3 dB typ at f = 900 MHz 1 3 2 1. Base 2. Collector 3. Emitter


    Original     		PDF 2SC4988 ZO 607 MA transistor zo 607 ZO 607 transistor transistor ZO 607 MA zo 607 zo 607 MA transistor 2SC4988

    TRANSISTOR marking 489 code

    Abstract: 2SC5218 SC-59A Hitachi DSA0014
    Text: 2SC5218 Silicon NPN Epitaxial Transistor Application MPAK VHF & UHF wide band amplifier Features 3 • High gain bandwidth product fT = 9 GHz typ. • High gain, low noise figure PG = 13.0 dB typ., NF = 1.2 dB typ. at f = 900 MHz 1 2 1. Emitter 2. Base 3. Collector


    Original     		PDF 2SC5218 SC-59A TRANSISTOR marking 489 code 2SC5218 SC-59A Hitachi DSA0014

    ZO 103 MA 75 623

    Abstract: zo 103 ma 513 s12 datasheet 2SC4992 ZO 103 zo 405 if amplifire uhf amplifire
    Text: 2SC4992 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CMPAK–4 Features 4 • High gain bandwidth product fT = 9.5 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 3 1 2 1. Collector 2. Emitter


    Original     		PDF 2SC4992 ZO 103 MA 75 623 zo 103 ma 513 s12 datasheet 2SC4992 ZO 103 zo 405 if amplifire uhf amplifire

    2SC5141

    Abstract: 2SC5218 Hitachi DSA0014
    Text: 2SC5141 Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifier SMPAK Features • High gain bandwidth product fT = 5.8 GHz typ. • High gain, low noise figure PG = 13 dB typ., NF = 1.6 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector


    Original     		PDF 2SC5141 2SC5141 2SC5218 Hitachi DSA0014

    Untitled

    Abstract: No abstract text available
    Text: BFR106 Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers


    Original     		PDF BFR106 AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: B iM E D N P U C T O R « MPSH11 MMBTH11 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 pA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving


    OCR Scan     		PDF MPSH11 MMBTH11 MPSH11

    transistor rc4

    Abstract: MMBT5179 MPS5179
    Text: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common


    OCR Scan     		PDF MPS5179 MMBT5179 OT-23 tS0113D transistor rc4 MMBT5179 MPS5179

    bf282

    Abstract: mps51
    Text: S E M IC O N D U C T O R tm / MMBT5179 / PN5179 MPS5179 PN5179 MMBT5179 SOT-23 Mark: 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |^A to 30 m A range in common em itter or comm on base m ode of operation, and in low frequency


    OCR Scan     		PDF MPS5179 MMBT5179 PN5179 MMBT5179 OT-23 28E-18 bf282 mps51

    TRANSISTOR C 3223

    Abstract: TRANSISTOR C 1177 BT5179 NPN power transistor spice
    Text: Sáfe:-O O W :Oí •v MPS5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |uA to 30 m A range in common em itter or common base m ode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.


    OCR Scan     		PDF MPS5179 MMBT5179 MPS5179 TRANSISTOR C 3223 TRANSISTOR C 1177 BT5179 NPN power transistor spice

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


    OCR Scan     		PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    PHILIPS 108 CAPACITOR

    Abstract: BLF246 D11057A SC08a SOT121 711C SOT121 Package marking mgg
    Text: Philips Semiconductors Product specification VHF power MOS transistor BLF246 FEATURES PINNING -S O T121 • High power gain PIN SYMBOL • Low noise figure 1 d drain • Easy power control 2 s source • Good thermal stability 3 g gate • Withstands full load mismatch.


    OCR Scan     		PDF BLF246 OT121 SC08a MGG092 OT121. 7110fl2b PHILIPS 108 CAPACITOR BLF246 D11057A SOT121 711C SOT121 Package marking mgg

    Untitled

    Abstract: No abstract text available
    Text: OOETTBfci MED M l A P X Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 1 N AMER PHIL IPS/DISCRETE h^E D PIN CONFIGURATION FEATURES • High power gain • Low noise • Easy power control • Good thermal stability • Withstands full load mismatch


    OCR Scan     		PDF BLF242 OT123 OT123 MCA930

    g300 rev 2.0

    Abstract: SL 100 NPN Transistor PN5179 transistor rc4 MMBT5179 MPS5179 TRANSISTOR C 3223
    Text: MICQNDUCTGR i MPS5179 PN5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 piA to 30 mA range in common em itter or comm on base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.


    OCR Scan     		PDF MPS5179 MMBT5179 PN5179 g300 rev 2.0 SL 100 NPN Transistor PN5179 transistor rc4 MMBT5179 MPS5179 TRANSISTOR C 3223

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors WM bb 5 3 R 31 Q02RR6Q 536 M APX Product specification VHF power MOS transistor BLF246 N AUER PHILIPS/DISCRETE FEATURES bRE PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability


    OCR Scan     		PDF Q02RR6Q BLF246 OT121 UCA939 CA940

    7z31

    Abstract: Philips 809 08003 SOT123 Package sot123 PINNING-SOT123 BLF242 VHF transmitter circuit T-39-07
    Text: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • Sb E 7 13 c! ' t0 7 ' BLF242 D • 711Dfl2fci 0 0 4 3 7 6 4 47T ■ P H I N PIN CONFIGURATION High power gain Low noise Easy power control


    OCR Scan     		PDF BLF242 711DA2b OT123 PINNING-SOT123 7z31 Philips 809 08003 SOT123 Package sot123 PINNING-SOT123 BLF242 VHF transmitter circuit T-39-07

    BLF245

    Abstract: sot123 package VHF transistor amplifier circuit
    Text: Philips Semiconductors tb S B T B l GGSTTSB SOT M APX Product specification VHF power MOS transistor BLF245 N AUER PHILIPS/DISCRETE b^E T> PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability


    OCR Scan     		PDF BLF245 OT123 -SOT123 MBAJ79 BLF245 sot123 package VHF transistor amplifier circuit

    transistor zo 607

    Abstract: transistor ZO 607 MA 2SC 1022
    Text: HITACHI 2S C 4988-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 8.5 GHz typ • High gain, low noise figure PG = 10.5 dB typ, NF = 1.3 dB typ at f = 9 0 0 MHz Table 1 Absolute M aximum Ratings Ta = 25°C


    OCR Scan     		PDF 2SC4988 transistor zo 607 transistor ZO 607 MA 2SC 1022

    transistor marking tT2

    Abstract: No abstract text available
    Text: HITACHI 2SC5140-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j = 9 GHz typ. • High gain, low noise figure PG = 15 dB typ., NF = 1.6 dB typ. at f = 900 MHz 1. Emitter 2. Base


    OCR Scan     		PDF 2SC5140------Silicon 2SC5140 transistor marking tT2

    transistor marking YD ghz

    Abstract: 2SC4995 z 0607 ma yd 1208 transistor m 4995
    Text: HITACHI 2SC4995-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire C M P A K -4 Features • High gain bandwidth product f j = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 MHz 1. 2. 3. 4.


    OCR Scan     		PDF 2SC4995-----Silicon cut369 transistor marking YD ghz 2SC4995 z 0607 ma yd 1208 transistor m 4995

    bje 133 resistor

    Abstract: No abstract text available
    Text: bbSB'lBl D D S T ^ M ST? • APX Philips Semiconductors Productspecifjcatj^ VHF power MOS transistor — ^ BLF244 i FEATURES N AMER PHILIPS/] ISCRETE b*]E B PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability


    OCR Scan     		PDF BLF244 bje 133 resistor

    Transistor BLF244

    Abstract: philips Trimmer 60 pf pu enamelled copper wire BLF244 capacitor 104 ceramic bje 133 resistor
    Text: Philips Semiconductors bbSBIBl D D E ' m M ST7 M A P X Product specification VHF power MOS transistor BLF244 N FEATURES AMER P H IL IP S /D IS C R E T E b 'i E PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability


    OCR Scan     		PDF -SOT123 BLF244 7Z21784 Transistor BLF244 philips Trimmer 60 pf pu enamelled copper wire BLF244 capacitor 104 ceramic bje 133 resistor

    choke marking nb 03

    Abstract: SOT121 Package BLF246
    Text: Philips Semiconductors a tiS 3 R 3 1 0 0 5 TRÔD 536 APX Product specification VHF power MOS transistor BLF246 b'ìE i> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability


    OCR Scan     		PDF Q05TRÃ BLF246 OT121 OT121 /CA93V choke marking nb 03 SOT121 Package BLF246