Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.
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Original
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BC847QAS
DFN1010B-6
OT1216)
BC857QAS.
BC847QAPN.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PMXB75UPE
DFN1010D-3
OT1215)
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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Original
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PBSS4260QA
DFN1010D-3
OT1215)
PBSS5260QA.
AEC-Q101
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PDF
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PMDXB600UNE
DFN1010B-6
OT1216)
MOSFET TRANSISTOR SMD MARKING CODE 11
NXP SMD TRANSISTOR MARKING CODE s1
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PMXB75UPE
DFN1010D-3
OT1215)
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PMDXB950UPE
DFN1010B-6
OT1216)
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PMXB65ENE
DFN1010D-3
OT1215)
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4230QA 30 V, 2 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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Original
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PBSS4230QA
DFN1010D-3
OT1215)
PBSS5230QA.
AEC-Q101
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PDF
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marking code C9
Abstract: BLF246 transistor 097
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF246 VHF power MOS transistor Product specification Supersedes data of 1996 Oct 21 2003 Aug 05 Philips Semiconductors Product specification VHF power MOS transistor BLF246 PINNING - SOT121B FEATURES • High power gain
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Original
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M3D060
BLF246
OT121B
OT121B
SCA75
613524/04/pp15
marking code C9
BLF246
transistor 097
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PMXB65UPE
DFN1010D-3
OT1215)
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PDF
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Untitled
Abstract: No abstract text available
Text: Package outline Plastic single ended surface mounted package LFPAK33 ; 8 leads E e1 L SOT1210 A A c1 b1 E1 D2 mounting base D1 D H 1 4 e b w X A A1 c C θ Lp y C detail X 2.5 5 mm scale Dimensions Unit(1) A A1 b b1 c c1 D(1) D1 D2 E(1) E1 e e1 H L Lp w y
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Original
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LFPAK33)
OT1210
12-03-1side
sot1210
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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Original
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PBSS5260QA
DFN1010D-3
OT1215)
PBSS4260QA.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PMXB56EN
DFN1010D-3
OT1215)
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic
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Original
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PMCXB900UE
DFN1010B-6
OT1216)
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PMXB120EPE
DFN1010D-3
OT1215)
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PMXB40UNE
DFN1010D-3
OT1215)
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PMXB40UNE
DFN1010D-3
OT1215)
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5230QA 30 V, 2 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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Original
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PBSS5230QA
DFN1010D-3
OT1215)
PBSS4230QA.
AEC-Q101
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PDF
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BLF246
Abstract: SOT121 Package marking c8 transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF246 VHF power MOS transistor Product specification Supersedes data of September 1992 1996 Oct 21 Philips Semiconductors Product specification VHF power MOS transistor BLF246 FEATURES PINNING - SOT121 • High power gain
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Original
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BLF246
OT121
OT121
BLF246
SOT121 Package
marking c8 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: Package outline HSOP16F: plastic, heatsink small outline package; 16 leads flat SOT1211-1 D X E c D3 E3 B A HE y v A D1 D2 e1 b1(2x) w 16 B 15 E2 A E1 A2 Q1 pin 1 index A1 1 detail X 14 b(14x) e2 e w B (12x) 10 mm scale Dimensions (mm are the original dimensions)
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Original
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HSOP16F:
OT1211-1
sot1211-1
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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Original
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PBSS5130QA
DFN1010D-3
OT1215)
PBSS4130QA.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: Reflow soldering footprint Footprint information for reflow soldering of DFN1010D-3 package SOT1215 1.2 0.45 2x 0.3 1.1 0.35 (2x) 0.4 0.25 (2x) 0.75 0.3 0.5 1.5 1.4 0.4 0.5 0.4 0.3 0.5 1.3 0.4 0.3 0.4 0.5 1.3 solder land solder land plus solder paste occupied area
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Original
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DFN1010D-3
OT1215
sot1215
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PDF
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Untitled
Abstract: No abstract text available
Text: Reflow soldering footprint Footprint information for reflow soldering of DFN1010B-6 package SOT1216 0.9 0.35 0.35 0.15 0.2 6x 0.15 1.3 1.2 0.35 0.25 0.5 0.6 0.35 0.25 1.1 0.3 (6x) 1 1.35 solder land solder land plus solder paste occupied area solder resist
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Original
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DFN1010B-6
OT1216
sot1216
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PDF
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Untitled
Abstract: No abstract text available
Text: 3$ . SOT1210 / LFPAK33; reel pack, SMD, 7" Q1/T1 standard product orientation Orderable part number ending ,115 or X Ordering code 12NC) ending 115 Rev. 1 — 31 March 2014 Packing information 1. Packing method Printed plano box Barcode label Reel Tape
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Original
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OT1210
LFPAK33;
001aak603
LFPAK33
OT1210
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PDF
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