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    TRANSISTOR MARKING Y2 Search Results

    TRANSISTOR MARKING Y2 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING Y2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8550 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 M8550 -100mA -800mA -800mA, -80mA -20mA

    ss8050 sot-323

    Abstract: ss8550 Y2 TRANSISTOR SS8050 ss8550 transistor SS8550 SS8050 Y2
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors SS8550 SOT-323 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2. Emitter 3. Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF OT-323 SS8550 OT-323 SS8050 ss8050 sot-323 ss8550 Y2 TRANSISTOR SS8050 ss8550 transistor SS8550 SS8050 Y2

    transistor y21 sot-23

    Abstract: M8550
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8550 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 M8550 -100A, -100mA -800mA -800mA, -80mA transistor y21 sot-23 M8550

    SS8550 sot-23 Y2

    Abstract: ss8550 sot-23 transistor ss8050 sot23 transistor marking y2 ss8050 sot-23 MARKING Y2 SS8050 SS8050 equivalent SS8050 sot-23 equivalent transistor SS8550
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550 SOT-23 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2.Emitter 3.Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 SS8550 OT-23 SS8050 SS8550 sot-23 Y2 ss8550 sot-23 transistor ss8050 sot23 transistor marking y2 ss8050 sot-23 MARKING Y2 SS8050 SS8050 equivalent SS8050 sot-23 equivalent transistor SS8550

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550 SOT-23 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2.Emitter 3.Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 SS8550 OT-23 SS8050 -100mA -800mA -800mA, -80mA

    transistor Y2

    Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
    Text: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful


    Original     		PDF FMB3946 100mA 100MHz 100MHz 100uA, fmb3946 lwpPr23 transistor Y2 Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp Supersot 6

    ss8550 sot-23

    Abstract: SS8550 sot-23 Y2 sot23 transistor marking y2 SS8050 Y2 marking Y2 ss8550 ss8050 sot-23 transistor marking y2 SS8050 sot-23 Y2 ss8550 TRANSISTOR
    Text: SS8550 SOT-23 Transistor PNP SOT-23 1. Base 2.Emitter 3.Collector Features Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Dimensions in inches and (millimeters) Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF OT-23 SS8550 OT-23 SS8050 -100A, -100mA -800mA -800mA, -80mA ss8550 sot-23 SS8550 sot-23 Y2 sot23 transistor marking y2 SS8050 Y2 marking Y2 ss8550 ss8050 sot-23 transistor marking y2 SS8050 sot-23 Y2 ss8550 TRANSISTOR

    PXT8050

    Abstract: Y2 SOT-89 PXT8550
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors PXT8550 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Compliment to PXT8050 1 2. COLLECTOR 2 MARKING: Y2 3 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF OT-89 PXT8550 OT-89 PXT8050 -100mA -800mA -800mA, -80mA PXT8050 Y2 SOT-89 PXT8550

    transistor y21 sot-23

    Abstract: No abstract text available
    Text: M8550 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Power dissipation MARKING: Y21 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25


    Original     		PDF M8550 OT-23 OT-23 -100A -100A, -100mA -800mA -800mA, -80mA transistor y21 sot-23

    PXT8550

    Abstract: marking Y2 Y2 SOT-89 transistor marking y2
    Text: PXT8550 SOT-89 Transistor NPN 1. BASE 1 SOT-89 2. COLLECTOR 2 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER 3 B Features — 2.6 4.25 2.4 3.75 Compliment to PXT8050 0.8 MIN MARKING: Y2 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF PXT8550 OT-89 OT-89 PXT8050 -800mA -800mA, -80mA -10mA PXT8550 marking Y2 Y2 SOT-89 transistor marking y2

    BF998W

    Abstract: SOT 343 MARKING BF BF998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998W VPS05605 OT-343 Cha00 EHT07305 EHT07306 May-05-1999 BF998W SOT 343 MARKING BF BF998

    bf998

    Abstract: bf998 mosfet tetrode application note VPS05178
    Text: BF998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998 VPS05178 OT143 EHT07305 EHT07306 Aug-10-2001 bf998 bf998 mosfet tetrode application note VPS05178

    BF998W

    Abstract: 998 transistor bf998 102001 transistor BF 998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998W VPS05605 OT343 EHT07305 EHT07306 Aug-10-2001 BF998W 998 transistor bf998 102001 transistor BF 998

    BF998R

    Abstract: 998 transistor transistor BF 998
    Text: BF998R Silicon N-Channel MOSFET Tetrode  Short-channel transistor with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration


    Original     		PDF BF998R OT143R sold00 EHT07305 EHT07306 Aug-10-2001 BF998R 998 transistor transistor BF 998

    k d 998 0

    Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
    Text: BF 998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF VPS05178 OT-143 Res00 EHT07305 EHT07306 Oct-26-1999 k d 998 0 transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998

    Q62702-F979

    Abstract: BF599
    Text: NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion BF 599 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 599 NB Q62702-F979 B SOT-23 E C Maximum Ratings Parameter


    Original     		PDF Q62702-F979 OT-23 Iy21e Q62702-F979 BF599

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR t m FMB3946 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful


    OCR Scan     		PDF FMB3946 100mA 100MHz 100MHz 10OuA, fmb3946 lwpPr23

    y211

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC filC D fi'iEOOSb 0Q0527T b BF 994 Marked with: M 94 TTKUllFyMCQiKl electronic Creative Technologies - N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mlxerstages especially for VH F TV-tuners Features:


    OCR Scan     		PDF 0Q0527T y211

    TRANSISTOR BC 814

    Abstract: TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257
    Text: . TELEFUNKEN ELECTRONIC file D ^•3 m W I M M electronic Creative Technologies ■ a^BOG^b 00053^2 5 /~ZS~ CFK10 N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with


    OCR Scan     		PDF CFK10 569-GS TRANSISTOR BC 814 TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257

    CF-121

    Abstract: ALG TRANSISTOR ALG Transistor MARKING 50B4DIN41867
    Text: TELEFUNKEN ELECTRONIC fltUKFOilKlKtlKl electronic Û1C D • ê'iSOO'Jb DODSBH'J 1 7~ S / ~ 2 ^ ~ C F 121 Creative Technologies N-Channel-GaAs-M ESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;


    OCR Scan     		PDF 50B4DIN41867 569-GS CF-121 ALG TRANSISTOR ALG Transistor MARKING

    K 3699 transistor

    Abstract: 8120D MARKING CFK marking code CFK MOSFET transistor 4-573 CFk12 WMM marking code SOT 23 transistor marking v12 ghz marking code g2s code cfk
    Text: I TELEFUNKEN ELECTRONIC 61C D • 8120D=lt 0005M01 T ■ ALGG 7 = 5 / - SS - ' ¡ n U M M i » electronic CFK12 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz in common source configuration;


    OCR Scan     		PDF 8120D 0005M01 CFK12 569-GS K 3699 transistor MARKING CFK marking code CFK MOSFET transistor 4-573 CFk12 WMM marking code SOT 23 transistor marking v12 ghz marking code g2s code cfk

    CF-100

    Abstract: A08 transistor 50B4DIN41867 bss25 A08 marking F100T a08 transistor to-50 transistor bf 203
    Text: TELEFUNKEN ELECTRONIC aie d • a^socnb 0005340 Creative Technologies \ T - J f - N-Channel-GaAs-M ESFET-Tetrode Depletion M ode Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; in wireless telephone, broadcast sets, cabel TV and equipments with


    OCR Scan     		PDF 50B4DIN41867 569-GS CF-100 A08 transistor bss25 A08 marking F100T a08 transistor to-50 transistor bf 203

    transistor Bf 966

    Abstract: LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET
    Text: TELEFUNKEN ELECTRONIC ¥ ilL ilF O *lK l electronic 61C D • S^Dmb '7 s 3 / - 2 - S T ' 00052b2 0 BIAL66 BF 9 6 6 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners


    OCR Scan     		PDF 00052b2 IAL66 ft-11 569-GS 000s154 hal66 if-11 transistor Bf 966 LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET

    BF964

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC TdUHFÜSWIiia electronic filC D • fl^DO^b 0005254 1 * A L 6 G ~r- BF B r 964 j Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mlxerstages especially for VHF TV-tuners Futures:


    OCR Scan     		PDF 569-GS BF964