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    TRANSISTOR MARKING R25 Search Results

    TRANSISTOR MARKING R25 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING R25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER


    Original     		PDF 2SC3356 OT-23 QW-R206-024

    2SC3356

    Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
    Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER


    Original     		PDF 2SC3356 OT-23 QW-R206-024 2SC3356 marking r25 sot23 r25 marking NPN R25 2SC3356 R25 sot-23

    transistor code R24

    Abstract: R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET
    Text: 2SC4226 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier


    Original     		PDF 2SC4226 OT-323 2SC4226 01-June-2002 transistor code R24 R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET

    transistor code R24

    Abstract: R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC3356W FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz z Pb Lead-free High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS


    Original     		PDF 2SC3356W OT-323 R23/R24/R25 200taxial BL/SSSTF001 transistor code R24 R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor

    marking r25 NPN

    Abstract: NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES 2SC4226W Pb z Low noise. z High gain. z Power dissipation. PC=150mW Lead-free APPLICATIONS z High frequency low noise amplifier. SOT-323 ORDERING INFORMATION Type No.


    Original     		PDF 2SC4226W 150mW) OT-323 r23/r24/r25 BL/SSSTF042 marking r25 NPN NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W

    marking r25

    Abstract: transistor amplifier VHF/UHF NPN R25 hFE CLASSIFICATION Marking 24 2SC33 Transistor R25 R24 marking code transistor R24 marking DATASHEET SOT R23 SOT R25
    Text: 2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES A Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain


    Original     		PDF 2SC3356F OT-323 01-June-2002 marking r25 transistor amplifier VHF/UHF NPN R25 hFE CLASSIFICATION Marking 24 2SC33 Transistor R25 R24 marking code transistor R24 marking DATASHEET SOT R23 SOT R25

    2SC4226-T1

    Abstract: 2SC4226-T1-A ne85630 NE85630-A 2SC4226T1a transistor s2p Transistor R25 NE85630A 2SC4226-A r23 transistor
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary NE85630 / 2SC4226 Data Sheet R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor


    Original     		PDF NE85630 2SC4226 R09DS0022EJ0200 2SC4226 S21e2 SC-70) 2SC4226-T1 2SC4226-T1-A NE85630-A 2SC4226T1a transistor s2p Transistor R25 NE85630A 2SC4226-A r23 transistor

    2SC4226

    Abstract: No abstract text available
    Text: 2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● ● ● SOT-323 Low noise High gain Power dissipation. PC=150mW A L 3 3 C B Top View


    Original     		PDF 2SC4226 OT-323 150mW) 2SC4226-P 2SC4226-Q 2SC4226-R 23-Apr-2013 2SC4226

    2sc4226

    Abstract: NPN Silicon Epitaxial Planar Transistor 2SC4226 APPLICATION NOTES
    Text: 2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● ● ● SOT-323 Low noise High gain Power dissipation. PC=150mW A L 3 3 C B Top View


    Original     		PDF 2SC4226 OT-323 150mW) 2SC4226-P 2SC4226-Q 2SC4226-R 24-Feb-2011 2sc4226 NPN Silicon Epitaxial Planar Transistor 2SC4226 APPLICATION NOTES

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: R24 marking code transistor transistor code R24 R24 marking DATASHEET R24 marking code sot23 MMBTSC4226 marking r25 marking r25 NPN NPN R25 transistor amplifier VHF/UHF
    Text: MMBTSC4226 NPN Silicon Epitaxial Planar Transistor High Frequency Low Noise Amplifier. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Features: Low Noise NF=1.2dB TYP. @ f=1GHz, VCE=3V, IC=7mA High Gain S21e 2 =9.0dB TYP. @ f=1GHz, VCE=3V, IC=7mA


    Original     		PDF MMBTSC4226 OT-23 MMBTSC4226 Transistor hFE CLASSIFICATION Marking CE R24 marking code transistor transistor code R24 R24 marking DATASHEET R24 marking code sot23 marking r25 marking r25 NPN NPN R25 transistor amplifier VHF/UHF

    transistor code R24

    Abstract: R24 marking code transistor R24 marking code sot23 marking r25 NPN NPN R25 R24 marking DATASHEET Transistor hFE CLASSIFICATION Marking CE transistor R24 MMBTSC4226
    Text: MMBTSC4226 NPN Silicon Epitaxial Planar Transistor High Frequency Low Noise Amplifier. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Features: z Low Noise NF=1.2dB TYP. @ f=1GHz, VCE=3V, IC=7mA z High Gain S21e 2 =9.0dB TYP. @ f=1GHz, VCE=3V, IC=7mA


    Original     		PDF MMBTSC4226 OT-23 MMBTSC4226 transistor code R24 R24 marking code transistor R24 marking code sot23 marking r25 NPN NPN R25 R24 marking DATASHEET Transistor hFE CLASSIFICATION Marking CE transistor R24

    2SC3356

    Abstract: TRANSISTOR 2sc3356 transistor 1205 s-parameter RF POWER TRANSISTOR NPN transistor marking r25 RF TRANSISTOR 10GHZ 1205 transistor NPN RF Amplifier RF POWER TRANSISTOR NPN RF TRANSISTOR 10GHZ low noise
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3356 DESCRIPTION •Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz


    Original     		PDF 2SC3356 2SC3356 TRANSISTOR 2sc3356 transistor 1205 s-parameter RF POWER TRANSISTOR NPN transistor marking r25 RF TRANSISTOR 10GHZ 1205 transistor NPN RF Amplifier RF POWER TRANSISTOR NPN RF TRANSISTOR 10GHZ low noise

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    2SC4226

    Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold


    Original     		PDF 2SC4226 2SC4226 S21e2 2SC4226-T1 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p

    MC1741G

    Abstract: isc MJ2955 transistor MJ2955 TRANSISTOR STC7808 schematic diagram ac voltage regulator stc transistors series STC7818 mj2955 TO-220 schematic diagram 50 VDC POWER SUPPLY schematic diagram line ac voltage regulator
    Text: STC7800 Series http://onsemi.com 1.0 A Positive Voltage Regulators TO−220 T SUFFIX CASE 221A These voltage regulators are monolithic integrated circuits designed as fixed−voltage regulators for a wide variety of applications including local, on−card regulation. These regulators employ internal


    Original     		PDF STC7800 O-220 MC1741G isc MJ2955 transistor MJ2955 TRANSISTOR STC7808 schematic diagram ac voltage regulator stc transistors series STC7818 mj2955 TO-220 schematic diagram 50 VDC POWER SUPPLY schematic diagram line ac voltage regulator

    2SC3356

    Abstract: R24 marking DATASHEET r25 marking 2SC3356 Application Note Low Noise uhf transistor NPN R25 marking r25 sot23 r25 q
    Text: 2SC3356 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES    SOT-23 Low Noise Amplifier at VHF, UHF and CATV band Low Noise and High Gain High Power Gain


    Original     		PDF 2SC3356 OT-23 16-Oct-2009 2SC3356 R24 marking DATASHEET r25 marking 2SC3356 Application Note Low Noise uhf transistor NPN R25 marking r25 sot23 r25 q

    2SC3356 Application Note

    Abstract: 2SC3356 h 125 tam SOT R23 marking r25 sot23 r25 q 2SC3356 R25 sot-23
    Text: 2SC3356 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 A


    Original     		PDF 2SC3356 OT-23 01-Jun-2002 2SC3356 Application Note 2SC3356 h 125 tam SOT R23 marking r25 sot23 r25 q 2SC3356 R25 sot-23

    Untitled

    Abstract: No abstract text available
    Text: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.


    Original     		PDF MIXA150W1200TEH E72873 20110510b

    pcb diagram welding inverter

    Abstract: MIXA150W1200TEH solar inverters circuit diagram ntc 2,0 airconditioning inverter circuit solar inverter pcb E72873 ntc20 WELDING INVERTER DIAGRAM solar inverter
    Text: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 120 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.


    Original     		PDF MIXA150W1200TEH E72873 20100929a pcb diagram welding inverter MIXA150W1200TEH solar inverters circuit diagram ntc 2,0 airconditioning inverter circuit solar inverter pcb E72873 ntc20 WELDING INVERTER DIAGRAM solar inverter

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    transistor NEC D 588

    Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
    Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.


    OCR Scan     		PDF 2SC3356 2SC3356 transistor NEC D 588 IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356

    OC 140 germanium transistor

    Abstract: OC 74 germanium transistor 2N466 715C 5051A
    Text: MIL-S-19500/5 ».E * K r.roh 1 <?' SUPERSEDING »»TT o 1A cnn/dn 1V1X U “ Ü " l i 7 J U U / 0 - 1 1 / 5 March 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR. PNP GERMANIUM, LOW-POWER TYPE 2N466 m ia fin n fîn n la to i^cttiun iipia Vu-iy* * ann11 ucpax


    OCR Scan     		PDF MIL-S-19500/5 MIL-S-195Ã 0/51D 2N466 OC 140 germanium transistor OC 74 germanium transistor 2N466 715C 5051A

    GE 2646

    Abstract: 2SC3356 r25 CD/GE S 2646
    Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.


    OCR Scan     		PDF 2SC3356 2SC3356 S22e-FREQUENCY GE 2646 2SC3356 r25 CD/GE S 2646