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    TRANSISTOR MARKING NK Search Results

    TRANSISTOR MARKING NK Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING NK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GN4L3M

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR GN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES 0.3 +0.1 −0 • Compact package 0.15 +0.1 −0.05 Marking • Resistors built-in type • Complementary to GN4xxx ORDERING INFORMATION PART NUMBER


    Original     		PDF SC-70 GN4L3M

    D1649

    Abstract: r2kv GN4L3M
    Text: DATA SHEET SILICON TRANSISTOR GN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES • Compact package 0.3 +0.1 −0 0.15 +0.1 −0.05 • Resistors built-in type Marking • Complementary to GA4xxx PART NUMBER PACKAGE GN4xxx SC-70


    Original     		PDF SC-70 D1649 r2kv GN4L3M

    D1649

    Abstract: fn4l3n FN4F4M
    Text: DATA SHEET SILICON TRANSISTOR FN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package +0.1 0.65 –0.15 • Resistors built-in type • Complementary to FA4xxx 0.4 +0.1 –0.05 +0.1 0.16 –0.06 Marking PACKAGE


    Original     		PDF SC-59 D1649 fn4l3n FN4F4M

    R24020

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR FN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR ★ PACKAGE DRAWING Unit: mm FEATURES 0.65 –0.15 • Compact package +0.1 • Resistors built-in type • Complementary to FA4xxx 0.4 +0.1 –0.05 +0.1 0.16 –0.06 Marking PACKAGE


    Original     		PDF SC-59 R24020

    D1649

    Abstract: GN4L3M
    Text: DATA SHEET SILICON TRANSISTOR GN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR ★ PACKAGE DRAWING Unit: mm FEATURES • Compact package 0.3 +0.1 −0 • Resistors built-in type 0.15 +0.1 −0.05 Marking • Complementary to GA4xxx ORDERING INFORMATION PART NUMBER


    Original     		PDF SC-70 D1649 GN4L3M

    infineon marking W1s SOT23

    Abstract: marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23
    Text: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 30 mA 2 3 • Complementary type: BFR92P NPN 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFT92 Marking W1s Pin Configuration


    Original     		PDF BFT92 BFR92P infineon marking W1s SOT23 marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23

    Untitled

    Abstract: No abstract text available
    Text: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89


    Original     		PDF KSD1621 KSB1121 OT-89

    tm 1621

    Abstract: qs marking sot-89 QS 100 NPN Transistor KSB1121 KSD1621 KSD1621RTF KSD1621STF KSD1621TTF KSD1621UTF MARKING CODE B3 sot-89
    Text: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89


    Original     		PDF KSD1621 KSB1121 OT-89 tm 1621 qs marking sot-89 QS 100 NPN Transistor KSB1121 KSD1621 KSD1621RTF KSD1621STF KSD1621TTF KSD1621UTF MARKING CODE B3 sot-89

    Untitled

    Abstract: No abstract text available
    Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking


    Original     		PDF BFR949T

    Untitled

    Abstract: No abstract text available
    Text: BFR949T NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR949T VPS05996

    BFR949T

    Abstract: MA457 MARKING C6 BFR94
    Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking


    Original     		PDF BFR949T BFR949T MA457 MARKING C6 BFR94

    BFR94

    Abstract: No abstract text available
    Text: BFR949T NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR949T VPS05996 BFR94

    BFR949T

    Abstract: SC75 GMA marking
    Text: BFR949T NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR949T VPS05996 Oct-24-2001 BFR949T SC75 GMA marking

    marking CODE n3 6PIN

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
    Text: ２０１０年３月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2


    Original     		PDF 2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
    Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR340L3 Infineon Technologies transistor 4 ghz BFR193L3 BFR340L3 BFR34* transistor marking FA

    C5 MARKING TRANSISTOR

    Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
    Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)


    Original     		PDF BFR380L3 C5 MARKING TRANSISTOR infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2

    BFR360L3

    Abstract: BFR193L3
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR360L3 BFR360L3 BFR193L3

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain amplifiers up to 2 GHz 3  For linear broadband amplifiers  fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR193L3

    BFR193L3

    Abstract: BFR340L3 marking FA
    Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340L3 BFR193L3 BFR340L3 marking FA

    infineon marking L2

    Abstract: BFR193L3
    Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR193L3 infineon marking L2 BFR193L3

    BFR193L3

    Abstract: BFR380L3 marking FC
    Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description


    Original     		PDF BFR380L3 BFR193L3 BFR380L3 marking FC

    marking FC

    Abstract: No abstract text available
    Text: BFR380L3 NPN Silicon RF Transistor Preliminary data  High current capability and low figure for 3 wide dynamic range application  Low voltage operation  Ideal for low phase noise oscillators up to 3.5 GHz 1 2  Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR380L3 marking FC

    A1807

    Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
    Text: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for


    OCR Scan     		PDF 2SA1807F5 SC-63) A1807 nw-60 pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v

    Sanken STR

    Abstract: STR50041 sanken lot number sanken ic regulator str z STR50041A sanken str z sanken ic regulator sanken ic regulator str 7760E SC102
    Text: SA NK EN E L E C T R IC COMPANY, LTD. Sanken Switching Regulator Hybrid IC Type: ST R 5 0 0 4 1 A 1. Scope: The present specification shall only apply to Sanken Switching Regulator Hybrid IC, type SIR50041A. 2. Appearance and Configuration 2-1. Appearance.'


    OCR Scan     		PDF STR50041A STR50041A. 7760E Sanken STR STR50041 sanken lot number sanken ic regulator str z STR50041A sanken str z sanken ic regulator sanken ic regulator str 7760E SC102