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    TRANSISTOR MARKING CODE WTS 15 Search Results

    TRANSISTOR MARKING CODE WTS 15 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE WTS 15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking code wts

    Abstract: No abstract text available
    Text: BCR 166W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166W WTs 1=B UPON INQUIRY Package 2=E 3=C SOT-323


    Original     		PDF OT-323 Nov-26-1996 transistor marking code wts

    transistor marking code wts

    Abstract: sot-23 WTs sot-23 marking WTs Q62702-C2339
    Text: BCR 166 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF Q62702-C2339 OT-23 Nov-26-1996 transistor marking code wts sot-23 WTs sot-23 marking WTs Q62702-C2339

    transistor marking code wts

    Abstract: transistor marking code wts 15
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs


    Original     		PDF BCR166. BCR166/F/L3 BCR166T/W EHA07183 BCR166 BCR166F BCR166L3 BCR166T BCR166W OT323 transistor marking code wts transistor marking code wts 15

    transistor marking code wts

    Abstract: BCR108W BCR166 BCR166F BCR166W BCW66 bcr1
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR166/F BCR166W


    Original     		PDF BCR166. BCR166/F BCR166W EHA07183 BCR166 BCR166F OT323 transistor marking code wts BCR108W BCR166 BCR166F BCR166W BCW66 bcr1

    transistor marking code wts

    Abstract: BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs


    Original     		PDF BCR166. BCR166/F/L3 BCR166T/W EHA07183 BCR166 BCR166F BCR166L3 BCR166T BCR166W OT323 transistor marking code wts BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8

    Untitled

    Abstract: No abstract text available
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3


    Original     		PDF BCR166. BCR166 BCR166W EHA07183 OT323

    transistor marking code wts

    Abstract: No abstract text available
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3


    Original     		PDF BCR166. BCR166 BCR166W EHA07183 dissipationBCR166, BCR166W, OT323 transistor marking code wts

    transistor marking code wts

    Abstract: Marking W1s
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		PDF BCR48PN EHA07193 EHA07176 OT-363 OT363 transistor marking code wts Marking W1s

    transistor digital 47k 22k PNP NPN

    Abstract: No abstract text available
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		PDF BCR48PN OT-363 EHA07176 EHA07193 OT363 transistor digital 47k 22k PNP NPN

    transistor marking code wts

    Abstract: No abstract text available
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		PDF BCR48PN OT-363 EHA07176 EHA07193 OT363 transistor marking code wts

    Untitled

    Abstract: No abstract text available
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 2 3 Transistors in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		PDF BCR48PN OT-363 EHA07176 EHA07193

    infineon marking W1s

    Abstract: transistor marking code wts BCR108S BCR48PN marking code w1s
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 2 3 Transistors in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		PDF BCR48PN OT-363 EHA07176 EHA07193 infineon marking W1s transistor marking code wts BCR108S BCR48PN marking code w1s

    transistor marking code wts

    Abstract: No abstract text available
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor 2 1 NPN: R1 = 47k, R2 = 47k VPS05604 PNP: R1= 2.2k, R 2 = 47k


    Original     		PDF BCR48PN VPS05604 EHA07193 OT-363 EHA07176 OT363 transistor marking code wts

    transistor marking code wts

    Abstract: pnp array Q62702-C2496 tansistor npn transistor bc icbo nA npn Tansistor BC
    Text: BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ PNP: R1 = 2.2kΩ, R2 = 47kΩ


    Original     		PDF Q62702-C2496 OT-363 Dec-09-1996 transistor marking code wts pnp array tansistor npn transistor bc icbo nA npn Tansistor BC

    BUT12

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003.


    Original     		PDF TFP-100B TFP-100B) H8/3437 BUT12

    H8/3434F-ZTAT

    Abstract: T3 SL 100B mitsubishi ecs unit BUT12
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF TFP-100B TFP-100B) H8/3437 H8/3434F-ZTAT T3 SL 100B mitsubishi ecs unit BUT12

    HD64F3437TFLH16

    Abstract: ADE-702-161 BUT12
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF TFP-100B TFP-100B) H8/3437 HD64F3437TFLH16 ADE-702-161 BUT12

    Hitachi DSA00279

    Abstract: H8 hitachi assembler BUT12
    Text: Hitachi Single-Chip Microcomputer H8/3437 Series H8/3437 HD6473437, HD6433437 H8/3436 HD6433436 H8/3434 HD6473434, HD6433434 H8/3437W HD6433437W H8/3436W HD6433436W H8/3434W HD6433434W H8/3437F-ZTAT HD64F3437 H8/3437SF-ZTAT™ HD64F3437S H8/3434F-ZTAT™


    Original     		PDF H8/3437 H8/3437 HD6473437, HD6433437 H8/3436 HD6433436 H8/3434 HD6473434, HD6433434 H8/3437W Hitachi DSA00279 H8 hitachi assembler BUT12

    MARKING CODE T7s

    Abstract: MARKINGCODET7s
    Text: SIEM ENS BCR 166W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kiî, R2=47kfi TT IF Type Marking Ordering Code Pin Configuration BCR 166W WTs UPON INQUIRY 1=B Package 2=E


    OCR Scan     		PDF 47kfi) OT-323 fl235b05 623St30S MARKING CODE T7s MARKINGCODET7s

    transistor marking code wts

    Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
    Text: SIEMENS BCR 166 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=4.7ki2, R2=47kfl Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23


    OCR Scan     		PDF 47kfl) Q62702-C2339 OT-23 transistor marking code wts sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor

    1207A

    Abstract: No abstract text available
    Text: SIEMENS BCR 166 PNP Silicon Digital Transistor *Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kfl, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings


    OCR Scan     		PDF Q62702-C2339 OT-23 BE35b05 S35b05 fi235bD5 1207A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation


    OCR Scan     		PDF OT-363 Q62702-C2495

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2


    OCR Scan     		PDF 47ki2, Q62702-C2496 OT-363 235LQ5 D12Qb7M BCR48PN D12Qb75

    transistor bc 577

    Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2


    OCR Scan     		PDF 47ki2 Q62702-C2496 OT-363 transistor bc 577 bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575