C2275
Abstract: Q62702-C2275 108w
Text: BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 108W WHs 1=B Q62702-C2275 Package 2=E 3=C SOT-323
|
Original
|
Q62702-C2275
OT-323
Nov-26-1996
C2275
Q62702-C2275
108w
|
PDF
|
Q62702-C2414
Abstract: No abstract text available
Text: BCR 108S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in on package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Type Marking Ordering Code Pin Configuration
|
Original
|
Q62702-C2414
OT-363
Nov-26-1996
|
PDF
|
c2253
Abstract: Q62702-C2253
Text: BCR 108 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 108 WHs 1=B Q62702-C2253 Package 2=E 3=C SOT-23 Maximum Ratings
|
Original
|
Q62702-C2253
OT-23
Nov-26-1996
c2253
Q62702-C2253
|
PDF
|
marking WHs
Abstract: No abstract text available
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package
|
Original
|
BCR108.
BCR108S:
BCR108
BCR108W
BCR108S
EHA07184
EHA07174
BCR108S
marking WHs
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package
|
Original
|
BCR108.
BCR108S:
BCR108
BCR108W
BCR108S
EHA07184
EHA07174
|
PDF
|
BCR108
Abstract: BCR108F BCR108S BCR108W BCW66 bcr1
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see
|
Original
|
BCR108.
BCR108S:
BCR108/F
BCR108T/W
BCR108S
EHA07184
EHA07174
BCR108
BCR108F
BCR108
BCR108F
BCR108S
BCR108W
BCW66
bcr1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see
|
Original
|
BCR108.
BCR108S:
BCR108/F
BCR108T/W
BCR108S
EHA07184
EHA07174
BCR108
BCR108F
|
PDF
|
marking WHS sot23
Abstract: transistor marking code whs
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3
|
Original
|
BCR108.
BCR108S:
BCR108/F/L3
BCR108T/W
BCR108S
EHA07184
EHA07174
BCR108
BCR108F
BCR108L3
marking WHS sot23
transistor marking code whs
|
PDF
|
BCR108
Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see
|
Original
|
BCR108.
BCR108S:
BCR108/F/L3
BCR108T/W
BCR108S
EHA07184
EHA07174
BCR108
BCR108F
BCR108
BCR108F
BCR108L3
BCR108S
BCR108T
BCR108W
|
PDF
|
Triode MARKING 048
Abstract: 421f 2N4854 2N3838 2N4854U JANTXV 2N4854
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 November 2001. INCH-POUND MIL-PRF-19500/421F 25 August 2001 SUPERSEDING MIL-PRF-19500/421E 2 April 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DUAL TRANSISTOR, UNITIZED, NPN/PNP,
|
Original
|
MIL-PRF-19500/421F
MIL-PRF-19500/421E
2N3838,
2N4854,
2N4854U
Triode MARKING 048
421f
2N4854
2N3838
2N4854U
JANTXV 2N4854
|
PDF
|
01903
Abstract: diode cc 3053 sd 431 transistor JANTXV 2N2880 equivalent 2n3749 2N2880 MIL-PRF19500 Stancor sd 1074 transistor
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 September 1999. INCH-POUND MIL-PRF-19500/315F 30 June 1999 SUPERSEDING MIL-S-19500/315E 10 March 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
|
Original
|
MIL-PRF-19500/315F
MIL-S-19500/315E
2N2880,
2N3749,
MIL-PRF-19500.
01903
diode cc 3053
sd 431 transistor
JANTXV 2N2880 equivalent
2n3749
2N2880
MIL-PRF19500
Stancor
sd 1074 transistor
|
PDF
|
MC 3041 opto
Abstract: 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/548D 8 June 2001 SUPERSEDING MIL-PRF-19500/548C 10 October 1997 PERFORMANCE SPECIFICATION COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE
|
Original
|
MIL-PRF-19500/548D
MIL-PRF-19500/548C
4N47A,
4N48A,
4N49A,
4N47U,
4N48U,
4N49U
MC 3041 opto
4N47A
548D
4N48U JANTXV
4N49 JANTXJANTXV
4N49U JANTX JANTXV
3041 OPTO
4N49 opto
4N47U JANTX
federal isolator
|
PDF
|
2N335
Abstract: 2N335 JAN 2n333 2N336 2n336a 2N333A 2N335A 2N336LT2 transistor marking T2 2N336 JAN
Text: MIL-S-19500/37E 16 September 2001 SUPERSEDING MIL-S-19500/37D 22 November 1971 The documentation and process conversion measures necessary to comply with this document shall be completed by 16 December, 2001. MILITARY SPECIFICATION * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336,
|
Original
|
MIL-S-19500/37E
MIL-S-19500/37D
2N333,
2N335,
2N336,
2N333A,
2N335A,
2N336A,
2N333T2,
2N335T2,
2N335
2N335 JAN
2n333
2N336
2n336a
2N333A
2N335A
2N336LT2
transistor marking T2
2N336 JAN
|
PDF
|
PT 2102 ic
Abstract: MIL-PRF-19500 TRANSISTOR SUBSTITUTION DATA BOOK 2N3847 LM 3041 2N3846
Text: This documentation process conversion measures necessary to comply with this revision shall be completed by 27 September 1999. INCH-POUND MIL-PRF-19500/412B USAF 27 July 1999 SUPERSEDING MIL-S-19500/412A(USAF) 19 June 1990 PERFORMANCE SPECIFICATION SHEET
|
Original
|
MIL-PRF-19500/412B
MIL-S-19500/412A
2N3846,
2N3847,
PT 2102 ic
MIL-PRF-19500
TRANSISTOR SUBSTITUTION DATA BOOK
2N3847
LM 3041
2N3846
|
PDF
|
|
|
JANKCAR2N7389
Abstract: 2N7426 IRHC7360SE JANKCAF2N7389 IRHC9Y130 JANKCAR2N7268 2n7391 2n7425 JANKCAR2N7261 2n7389
Text: INCH-POUND MIL-PRF-19500/657A 22 February 2000 SUPERSEDING MIL-PRF-19500/657 23 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N and P-CHANNEL, SILICON VARIOUS TYPES JANHC, AND JANKC This specification is approved for use by all Departments
|
Original
|
MIL-PRF-19500/657A
MIL-PRF-19500/657
MIL-PRF-19500.
JANKCAR2N7389
2N7426
IRHC7360SE
JANKCAF2N7389
IRHC9Y130
JANKCAR2N7268
2n7391
2n7425
JANKCAR2N7261
2n7389
|
PDF
|
equivalent transistor 2N1711
Abstract: 2N1711 2N1890 equivalent 2N1711S 2N1890 2N1890S transistor 2N1711 E11051 transistor TL 431 g
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 September 1999. INCH-POUND MIL-PRF-19500/225F 25 June 1999 SUPERSEDING MIL-S-19500/225E 15 April 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,
|
Original
|
MIL-PRF-19500/225F
MIL-S-19500/225E
2N1711,
2N1711S,
2N1890,
2N1890S,
MIL-PRF-19500.
equivalent transistor 2N1711
2N1711
2N1890 equivalent
2N1711S
2N1890
2N1890S
transistor 2N1711
E11051
transistor TL 431 g
|
PDF
|
2N6603
Abstract: 2n6603 transistor 2N6603 JANTX marking code GNF 2n6604 jantxv 2N6604 2n6603 jan
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 October 1999. INCH-POUND MIL-PRF-19500/522A 30 July 1999 SUPERSEDING MIL-S-19500/522 EL 21 August 1976 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY
|
Original
|
MIL-PRF-19500/522A
MIL-S-19500/522
2N6603
2N6604
MIL-PRF-19500.
2n6603 transistor
2N6603 JANTX
marking code GNF
2n6604 jantxv
2N6604
2n6603 jan
|
PDF
|
diode cc 3053
Abstract: cc 3053 sd 431 transistor 2n3996 equivalent transistor tms 374c 2N3996 2N3997 2N3998 2N3999 MIL-PRF19500
Text: This is an advance copy of the dated document. The final document after review by the Defense Automated Printing Service may be slightly different in format. Actual technical content will be the same. The documentation and process conversion measures necessary to comply with this
|
Original
|
MIL-PRF-19500/374D
MIL-S-19500/374C
2N3996
2N3999,
diode cc 3053
cc 3053
sd 431 transistor
2n3996 equivalent transistor
tms 374c
2N3997
2N3998
2N3999
MIL-PRF19500
|
PDF
|
2N3743
Abstract: 2N4930 2N4931 397G
Text: INCH-POUND MIL-PRF-19500/397G 1 April 2002 SUPERSEDING MIL-PRF-19500/397F 21 April 2000 The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 July 2002. PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON
|
Original
|
MIL-PRF-19500/397G
MIL-PRF-19500/397F
2N3743,
2N4930,
2N4931
MIL-PRF-19500.
2N3743
2N4930
2N4931
397G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R]=2.2kD, R2=47kfl Pin Configuration BCR 108W WHs Q62702-C2275 1= B Package o Ordering Code II CO Marking LU II
|
OCR Scan
|
47kfl)
Q62702-C2275
OT-323
fl235bG5
0E35b05
0120bfi3
|
PDF
|
Q62702C2253
Abstract: transistor bI 240 108 Marking Q62702-C2253
Text: SIEMENS BCR 108 NPN Silicon Digital Transistor 1Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=2.2ki2, R2=47kii Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package O II CO Marking Ordering Code LU II CVJ Type
|
OCR Scan
|
47kii)
Q62702-C2253
OT-23
Q62702C2253
transistor bI 240
108 Marking
Q62702-C2253
|
PDF
|
108w
Abstract: Q62702-C2275
Text: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=2.2kiî, R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 108W WHs 1= B Q62702-C2275 Package 2=E 3=C
|
OCR Scan
|
47ki2)
Q62702-C2275
OT-323
300ns;
108w
Q62702-C2275
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 108 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kQ, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package 2=E 3=C SOT-23
|
OCR Scan
|
Q62702-C2253
OT-23
0120b7fl
235b05
|
PDF
|
Sot-363 whs
Abstract: marking code WHs
Text: SIEMENS BCR108S NPN Silicon D igital Transistor Array • Switching circuit, inverter, interface circuit, 4 5_ _ driver circuit • Two galvanic internal isolated Transistors in on package » Built in bias resistor (R1=2.2kß, R2=47k£i) 3 2 1 BCR108S WHs
|
OCR Scan
|
BCR108S
VPS05604
Q62702-C2414
OT-363
Sot-363 whs
marking code WHs
|
PDF
|
