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    TRANSISTOR MARKING CODE WHS Search Results

    TRANSISTOR MARKING CODE WHS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE WHS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2275

    Abstract: Q62702-C2275 108w
    Text: BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 108W WHs 1=B Q62702-C2275 Package 2=E 3=C SOT-323


    Original     		PDF Q62702-C2275 OT-323 Nov-26-1996 C2275 Q62702-C2275 108w

    Q62702-C2414

    Abstract: No abstract text available
    Text: BCR 108S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in on package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Type Marking Ordering Code Pin Configuration


    Original     		PDF Q62702-C2414 OT-363 Nov-26-1996

    c2253

    Abstract: Q62702-C2253
    Text: BCR 108 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 108 WHs 1=B Q62702-C2253 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF Q62702-C2253 OT-23 Nov-26-1996 c2253 Q62702-C2253

    marking WHs

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package


    Original     		PDF BCR108. BCR108S: BCR108 BCR108W BCR108S EHA07184 EHA07174 BCR108S marking WHs

    Untitled

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package


    Original     		PDF BCR108. BCR108S: BCR108 BCR108W BCR108S EHA07184 EHA07174

    BCR108

    Abstract: BCR108F BCR108S BCR108W BCW66 bcr1
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		PDF BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108S BCR108W BCW66 bcr1

    Untitled

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		PDF BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F

    marking WHS sot23

    Abstract: transistor marking code whs
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3


    Original     		PDF BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108L3 marking WHS sot23 transistor marking code whs

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		PDF BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W

    Triode MARKING 048

    Abstract: 421f 2N4854 2N3838 2N4854U JANTXV 2N4854
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 November 2001. INCH-POUND MIL-PRF-19500/421F 25 August 2001 SUPERSEDING MIL-PRF-19500/421E 2 April 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DUAL TRANSISTOR, UNITIZED, NPN/PNP,


    Original     		PDF MIL-PRF-19500/421F MIL-PRF-19500/421E 2N3838, 2N4854, 2N4854U Triode MARKING 048 421f 2N4854 2N3838 2N4854U JANTXV 2N4854

    01903

    Abstract: diode cc 3053 sd 431 transistor JANTXV 2N2880 equivalent 2n3749 2N2880 MIL-PRF19500 Stancor sd 1074 transistor
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 September 1999. INCH-POUND MIL-PRF-19500/315F 30 June 1999 SUPERSEDING MIL-S-19500/315E 10 March 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER


    Original     		PDF MIL-PRF-19500/315F MIL-S-19500/315E 2N2880, 2N3749, MIL-PRF-19500. 01903 diode cc 3053 sd 431 transistor JANTXV 2N2880 equivalent 2n3749 2N2880 MIL-PRF19500 Stancor sd 1074 transistor

    MC 3041 opto

    Abstract: 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/548D 8 June 2001 SUPERSEDING MIL-PRF-19500/548C 10 October 1997 PERFORMANCE SPECIFICATION COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE


    Original     		PDF MIL-PRF-19500/548D MIL-PRF-19500/548C 4N47A, 4N48A, 4N49A, 4N47U, 4N48U, 4N49U MC 3041 opto 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator

    2N335

    Abstract: 2N335 JAN 2n333 2N336 2n336a 2N333A 2N335A 2N336LT2 transistor marking T2 2N336 JAN
    Text: MIL-S-19500/37E 16 September 2001 SUPERSEDING MIL-S-19500/37D 22 November 1971 The documentation and process conversion measures necessary to comply with this document shall be completed by 16 December, 2001. MILITARY SPECIFICATION * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336,


    Original     		PDF MIL-S-19500/37E MIL-S-19500/37D 2N333, 2N335, 2N336, 2N333A, 2N335A, 2N336A, 2N333T2, 2N335T2, 2N335 2N335 JAN 2n333 2N336 2n336a 2N333A 2N335A 2N336LT2 transistor marking T2 2N336 JAN

    PT 2102 ic

    Abstract: MIL-PRF-19500 TRANSISTOR SUBSTITUTION DATA BOOK 2N3847 LM 3041 2N3846
    Text: This documentation process conversion measures necessary to comply with this revision shall be completed by 27 September 1999. INCH-POUND MIL-PRF-19500/412B USAF 27 July 1999 SUPERSEDING MIL-S-19500/412A(USAF) 19 June 1990 PERFORMANCE SPECIFICATION SHEET


    Original     		PDF MIL-PRF-19500/412B MIL-S-19500/412A 2N3846, 2N3847, PT 2102 ic MIL-PRF-19500 TRANSISTOR SUBSTITUTION DATA BOOK 2N3847 LM 3041 2N3846

    JANKCAR2N7389

    Abstract: 2N7426 IRHC7360SE JANKCAF2N7389 IRHC9Y130 JANKCAR2N7268 2n7391 2n7425 JANKCAR2N7261 2n7389
    Text: INCH-POUND MIL-PRF-19500/657A 22 February 2000 SUPERSEDING MIL-PRF-19500/657 23 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N and P-CHANNEL, SILICON VARIOUS TYPES JANHC, AND JANKC This specification is approved for use by all Departments


    Original     		PDF MIL-PRF-19500/657A MIL-PRF-19500/657 MIL-PRF-19500. JANKCAR2N7389 2N7426 IRHC7360SE JANKCAF2N7389 IRHC9Y130 JANKCAR2N7268 2n7391 2n7425 JANKCAR2N7261 2n7389

    equivalent transistor 2N1711

    Abstract: 2N1711 2N1890 equivalent 2N1711S 2N1890 2N1890S transistor 2N1711 E11051 transistor TL 431 g
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 September 1999. INCH-POUND MIL-PRF-19500/225F 25 June 1999 SUPERSEDING MIL-S-19500/225E 15 April 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,


    Original     		PDF MIL-PRF-19500/225F MIL-S-19500/225E 2N1711, 2N1711S, 2N1890, 2N1890S, MIL-PRF-19500. equivalent transistor 2N1711 2N1711 2N1890 equivalent 2N1711S 2N1890 2N1890S transistor 2N1711 E11051 transistor TL 431 g

    2N6603

    Abstract: 2n6603 transistor 2N6603 JANTX marking code GNF 2n6604 jantxv 2N6604 2n6603 jan
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 October 1999. INCH-POUND MIL-PRF-19500/522A 30 July 1999 SUPERSEDING MIL-S-19500/522 EL 21 August 1976 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY


    Original     		PDF MIL-PRF-19500/522A MIL-S-19500/522 2N6603 2N6604 MIL-PRF-19500. 2n6603 transistor 2N6603 JANTX marking code GNF 2n6604 jantxv 2N6604 2n6603 jan

    diode cc 3053

    Abstract: cc 3053 sd 431 transistor 2n3996 equivalent transistor tms 374c 2N3996 2N3997 2N3998 2N3999 MIL-PRF19500
    Text: This is an advance copy of the dated document. The final document after review by the Defense Automated Printing Service may be slightly different in format. Actual technical content will be the same. The documentation and process conversion measures necessary to comply with this


    Original     		PDF MIL-PRF-19500/374D MIL-S-19500/374C 2N3996 2N3999, diode cc 3053 cc 3053 sd 431 transistor 2n3996 equivalent transistor tms 374c 2N3997 2N3998 2N3999 MIL-PRF19500

    2N3743

    Abstract: 2N4930 2N4931 397G
    Text: INCH-POUND MIL-PRF-19500/397G 1 April 2002 SUPERSEDING MIL-PRF-19500/397F 21 April 2000 The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 July 2002. PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON


    Original     		PDF MIL-PRF-19500/397G MIL-PRF-19500/397F 2N3743, 2N4930, 2N4931 MIL-PRF-19500. 2N3743 2N4930 2N4931 397G

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R]=2.2kD, R2=47kfl Pin Configuration BCR 108W WHs Q62702-C2275 1= B Package o Ordering Code II CO Marking LU II


    OCR Scan     		PDF 47kfl) Q62702-C2275 OT-323 fl235bG5 0E35b05 0120bfi3

    Q62702C2253

    Abstract: transistor bI 240 108 Marking Q62702-C2253
    Text: SIEMENS BCR 108 NPN Silicon Digital Transistor 1Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=2.2ki2, R2=47kii Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package O II CO Marking Ordering Code LU II CVJ Type


    OCR Scan     		PDF 47kii) Q62702-C2253 OT-23 Q62702C2253 transistor bI 240 108 Marking Q62702-C2253

    108w

    Abstract: Q62702-C2275
    Text: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=2.2kiî, R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 108W WHs 1= B Q62702-C2275 Package 2=E 3=C


    OCR Scan     		PDF 47ki2) Q62702-C2275 OT-323 300ns; 108w Q62702-C2275

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 108 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kQ, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2253 OT-23 0120b7fl 235b05

    Sot-363 whs

    Abstract: marking code WHs
    Text: SIEMENS BCR108S NPN Silicon D igital Transistor Array • Switching circuit, inverter, interface circuit, 4 5_ _ driver circuit • Two galvanic internal isolated Transistors in on package » Built in bias resistor (R1=2.2kß, R2=47k£i) 3 2 1 BCR108S WHs


    OCR Scan     		PDF BCR108S VPS05604 Q62702-C2414 OT-363 Sot-363 whs marking code WHs