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    TRANSISTOR MARKING CODE WD Search Results

    TRANSISTOR MARKING CODE WD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE WD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-C2288

    Abstract: No abstract text available
    Text: BCR 141W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ Type Marking Ordering Code Pin Configuration BCR 141W WDs 1=B Q62702-C2288 Package 2=E 3=C SOT-323


    Original     		PDF Q62702-C2288 OT-323 Nov-26-1996 Q62702-C2288

    141S

    Abstract: Q62702-C2416
    Text: BCR 141S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ) Type Marking Ordering Code Pin Configuration


    Original     		PDF Q62702-C2416 OT-363 Nov-26-1996 141S

    c2258 transistor

    Abstract: c2258 Q62702-C2258
    Text: BCR 141 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ Type Marking Ordering Code Pin Configuration BCR 141 WDs 1=B Q62702-C2258 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF Q62702-C2258 OT-23 Nov-26-1996 c2258 transistor c2258 Q62702-C2258

    stwd100nywy3f

    Abstract: Reset Circuits ,sot323 STWD100Y
    Text: STWD100 Watchdog timer circuit Datasheet − production data Features • Current consumption 13 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C


    Original     		PDF STWD100 OT23-5, SC70-5 OT323-5) OT23-5 SC70-5, OT323-5 OT23-5L OT23-5L stwd100nywy3f Reset Circuits ,sot323 STWD100Y

    STWD100xX

    Abstract: STWD100xP stwd100ny STWD100NPWY3F STWD100xY WNP SOT23-5 JESD97 SC70-5 STWD100 transistor marking WY
    Text: STWD100 Watchdog timer circuit Features • Current consumption 13 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip-enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C


    Original     		PDF STWD100 OT23-5, SC70-5 OT323-5) OT23-5 SC70-5, OT323-5 STWD100xX STWD100xP stwd100ny STWD100NPWY3F STWD100xY WNP SOT23-5 JESD97 SC70-5 STWD100 transistor marking WY

    STWD100PY

    Abstract: No abstract text available
    Text: STWD100 Watchdog timer circuit Features • Current consumption 10 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C


    Original     		PDF STWD100 OT23-5, SC70-5 OT323-5) OT23-5 SC70-5, OT323-5 STWD100PY

    SOT323-5

    Abstract: No abstract text available
    Text: STWD100 Watchdog timer circuit Datasheet − production data Features • Current consumption 13 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C


    Original     		PDF STWD100 OT23-5, SC70-5 OT323-5) OT23-5 SC70-5, OT323-5 SOT323-5

    stwd100ny

    Abstract: SOT323-5 STWD100NYxxxx STWD100xX STWD100PY wy3f
    Text: STWD100 Watchdog timer circuit Datasheet − production data Features • Current consumption 13 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C


    Original     		PDF STWD100 OT23-5, SC70-5 OT323-5) OT23-5 SC70-5, OT323-5 stwd100ny SOT323-5 STWD100NYxxxx STWD100xX STWD100PY wy3f

    Untitled

    Abstract: No abstract text available
    Text: STWD100 Watchdog timer circuit Preliminary Data Features • Current consumption 9 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C


    Original     		PDF STWD100 OT23-5, SC70-5 OT323-5) OT23-5 SC70-5, OT323-5

    141W

    Abstract: No abstract text available
    Text: SIEMENS BCR 141W NPN Silicon Digital Transistor «Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=22ki2, R2=22ki2 BCR 141W WDs Pin Configuration Q62702-C2288 1= B Package O II CO Marking Ordering Code LU II CM Type


    OCR Scan     		PDF 22ki2, 22ki2) Q62702-C2288 OT-323 141W

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 141 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=22kfl, R2=22 kQ Pin Configuration BCR 141 WDs 1= B II co Q62702-C2258 Package O Marking Ordering Code LU II evi


    OCR Scan     		PDF 22kfl, Q62702-C2258 OT-23 Q120734 B35bQS Q12Q735

    102c marking

    Abstract: No abstract text available
    Text: SIEMENS BCR 141 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kQ, R2=22kiî Pin Configuration WDs 1=B Q62702-C2258 Package 2= E it O Marking Ordering Code BCR 141 CO Type


    OCR Scan     		PDF Q62702-C2258 OT-23 300ns; 102c marking

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: No abstract text available
    Text: BSP 296 I nf ineon technologies SIPMOS 9 Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Type '/ DS BSP 296 100 V Type BSP 296 Ordering Code Q67000-S067 1A Pin 2 WDS(on) Package Marking 0.8 Q SOT-223


    OCR Scan     		PDF Q67000-S067 OT-223 E6327 Values100 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 TRANSISTOR SMD MARKING CODE 7A

    bss84

    Abstract: BSS84 E6327 marking BSs sot23 siemens BSS84 siemens
    Text: SIEMENS BSS84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Pin 1 Pin 2 G Type BSS84 Vos -50 V Type BSS84 BSS84 Ordering Code Q62702-S568 Q67000-S243 b -0.13 A WDS(on) 10Q Pin 3 S Package Marking


    OCR Scan     		PDF BSS84 BSS84 OT-23 Q62702-S568 Q67000-S243 E6327 E6433 BSS84 E6327 marking BSs sot23 siemens BSS84 siemens

    transistor 45 f 123

    Abstract: Siemens S 187 B transistor 123 S 187 Siemens
    Text: SIEMENS BSP 123 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^ G S th = 0.8.2.0V Type BSP 123 Vqs 100 V Type BSP 123 Ordering Code Q67000-S306 0.38 A bòston) 60 Package Marking SOT-223 BSP 123 Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S306 E6327 OT-223 GPS05560 transistor 45 f 123 Siemens S 187 B transistor 123 S 187 Siemens

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 324 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Vbs th = 1-5 .2.5 V Type VDS b f lDS(on) Package Marking BSP 324 400 V 0.17 A 25 n SOT-223 BSP 324 Type BSP 324 Ordering Code Q67000-S215 Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S215 E6327

    TRANSISTOR 318

    Abstract: BSP 312 BSP318 MU diode MARKING CODE
    Text: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • V GS th = 1.2 .2.0 V Type BSP 318 VÒS 60 V b 2.6 A Type BSP 318 Ordering Code Q67000-S127 ffDS(on) 0.15 £2 Package Marking SOT-223


    OCR Scan     		PDF OT-223 Q67000-S127 E6327 OT-223 TRANSISTOR 318 BSP 312 BSP318 MU diode MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: BSP 295 In fin e o n t«e h n o l o g i i t SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level * ‘'GS th = °-8 -20V Vbs fe BSP 295 50 V 1.8 A Type BSP 295 Ordering Code Q67000-S066 Type WDS(on) Package Marking 0.3 i l


    OCR Scan     		PDF Q67000-S066 OT-223 E6327 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    marking sSH sot-23

    Abstract: MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens
    Text: SIEMENS BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 6 - 2 -6 v Pin 1 Pin 2 Pin 3 "g Type BSS 119 VDS 100 V Type BSS 119 O rdering Code Q67000-S007 0.17 A ^DS(on) Package Marking 6n SOT-23 sSH Tape and Reel Information


    OCR Scan     		PDF OT-23 Q67000-S007 E6327 OT-23 GPS05557 marking sSH sot-23 MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens

    BF 331 TRANSISTORS

    Abstract: transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c
    Text: TELEFUNKEN ELECTRONIC Ö1C T> • Ö ^ O O R b 0005330 2 ■ ALlSG BFX89 TiHitPüUNliKiM] electronic T -sr-sr Creativo Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General, up to the GHz range Feature»: • Power gain 7 dB Dimensions In mm


    OCR Scan     		PDF BFX89 569-GS BF 331 TRANSISTORS transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c

    transistor BF 506

    Abstract: bf506 wl SOT-23
    Text: TELEFUNKEN ELECTRONIC filC D • A'^QQ'Jb 0005513 'i ■ AL6G ^ 7 2 / ~ TTIdilFlLDMDSIKl electronic | B F 506 Creative Technologies * Silicon PNP RF Transistor Applications: Oscillator-, mixer and uncontrolled pre-amplifier stages up to 300 MHz Features: • Small feedback capacitance


    OCR Scan     		PDF 569-GS transistor BF 506 bf506 wl SOT-23

    BF509S

    Abstract: transistor BF 509 BF509 marking code 3h transistor creative 6.1 6 T 3H sot-23 TRANSISTOR MARKING 76 marking U12
    Text: TELEFUNKEN ELECTRONIC filC D WÊ fi^EOO^b 000521^ T • ALG6 7~' 3 t - n BF 509 S ITimiPtMl&GItM electronic Creative Technologies Silicon PNP RF Transistor Applications! Gain controlled VHF Input stages Features: • High power gain • Low noise figure High reverse attenuation


    OCR Scan     		PDF 7-31-tl ft-11 569-GS 000s154 hal66 if-11 BF509S transistor BF 509 BF509 marking code 3h transistor creative 6.1 6 T 3H sot-23 TRANSISTOR MARKING 76 marking U12

    SOT 86 MARKING 03

    Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S
    Text: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S


    OCR Scan     		PDF BF420S T0126 15A3DIN SOT 86 MARKING 03 transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S

    transistor C 2615

    Abstract: bu526 js 2617 BF56 marking EAAT transistor 526
    Text: L I _-— - ^ 17E D TELEFUNKEN ELECTRONIC • Ô ^ O O R b DQ0tm'7S 4 . THIUIIFTOKIMI electronic BU 526 Crtalrv« Tèchnotogtç* r-3 3 -1 3 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In tripple diffusion technique


    OCR Scan     		PDF