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    TRANSISTOR MARKING CODE 43 Search Results

    TRANSISTOR MARKING CODE 43 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE 43 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n5109

    Abstract: transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor
    Text: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER


    Original     		PDF 2N5109 CP214 2N5109 transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor

    Q62702-F1271

    Abstract: No abstract text available
    Text: BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-143 Q62702-F1271 Dec-11-1996 Q62702-F1271

    TRANSISTOR S1d

    Abstract: Q62702-A1243 SCT-595
    Text: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 42M s1D Q62702-A1243 Package


    Original     		PDF VPW05980 Q62702-A1243 SCT-595 Jun-18-1997 EHP00842 EHP00843 TRANSISTOR S1d Q62702-A1243 SCT-595

    BFP 181R

    Abstract: IC 7449 Q62702-F1685 SIEMENS marking
    Text: BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-143R Q62702-F1685 Jan-21-1997 BFP 181R IC 7449 Q62702-F1685 SIEMENS marking

    smd marking 58a

    Abstract: 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A
    Text: SPI80N10L SPP80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS Package Ordering Code Marking SPP80N10L PG-TO220-3-1 Q67042-S4173 80N10L


    Original     		PDF SPI80N10L SPP80N10L PG-TO262-3-1 PG-TO220-3-1 Q67042-S4173 80N10L smd marking 58a 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A

    C2592

    Abstract: Q62702-C2592 Q62702-C2593 Q62702-C2594 SCT-595 marking code AES
    Text: BCP 51M . BCP 53M PNP Silicon AF Transistor 4 • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 • Complementary types: BCP 54M.BCP 56M NPN 2 1 VPW05980 Type Marking Ordering Code Pin Configuration


    Original     		PDF VPW05980 Q62702-C2592 Q62702-C2593 Q62702-C2594 SCT-595 EHP00262 EHP00260 EHP00263 EHP00264 C2592 Q62702-C2593 Q62702-C2594 SCT-595 marking code AES

    47N10

    Abstract: SPB47N10 SPI47N10 SPP47N10 V550-12 Q67060-S7431
    Text: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS P-TO262-3-1 Package Ordering Code Marking SPP47N10 P-TO220-3-1


    Original     		PDF SPI47N10 SPP47N10 SPB47N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP47N10 Q67040-S4183 47N10 47N10 SPB47N10 SPI47N10 V550-12 Q67060-S7431

    Q62702-F979

    Abstract: BF599
    Text: NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion BF 599 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 599 NB Q62702-F979 B SOT-23 E C Maximum Ratings Parameter


    Original     		PDF Q62702-F979 OT-23 Iy21e Q62702-F979 BF599

    11n10

    Abstract: P-TO252 SPD11N10 SPU11N10
    Text: SPD11N10 SPU11N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 RDS on 170 m ID 10.5 A P-TO251 Type Package Ordering Code Marking


    Original     		PDF SPD11N10 SPU11N10 P-TO251 P-TO252 Q67042-S4121 11N10 11n10 P-TO252 SPD11N10 SPU11N10

    BSS138W

    Abstract: D028 E6327 D003 SOT sws sot-323
    Text: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated SOT-323 Type Package Ordering Code Tape and Reel Information Marking BSS138W SOT-323


    Original     		PDF BSS138W OT-323 Q67042-S4187 E6327: Q67042-S4191 E6433: BSS138W D028 E6327 D003 SOT sws sot-323

    SOT23 marking skS

    Abstract: SKs SOT23 q67042-s4184 dd1270 BSS138N D023 D26 SOT23 marking code SKs marking SKs sot-23
    Text: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23


    Original     		PDF BSS138N OT-23 BSS138N OT-23 Q67042-S4184 Q67042-S4190 E6327: E6433: SOT23 marking skS SKs SOT23 dd1270 D023 D26 SOT23 marking code SKs marking SKs sot-23

    SOT23 marking skS

    Abstract: Q67042-S4184 diode sot-23 marking AG SKs SOT23 D023 BSS138N SKs 83 SKs TRANSISTOR E6327 marking code SKs
    Text: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23


    Original     		PDF BSS138N OT-23 Q67042-S4184 E6327: Q67042-S4190 E6433: SOT23 marking skS Q67042-S4184 diode sot-23 marking AG SKs SOT23 D023 BSS138N SKs 83 SKs TRANSISTOR E6327 marking code SKs

    1721E50R

    Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
    Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking


    OCR Scan     		PDF LAE4001R LAE4002S LBE2003S LBE2009S LCE2009S LEE1015T LTE21009R LTE21015R LTE21025R LTE42005S 1721E50R Marking Codes Philips MARKING CODE 2327E40R marking codes transistors transistor 502 r8 marking marking Code philips

    sot-23 Marking LG

    Abstract: No abstract text available
    Text: Central" CMPTA44 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z


    OCR Scan     		PDF CMPTA44 OT-23 CP310 26-September OT-23 sot-23 Marking LG

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 777 NPN Silicon RF Transistor Preliminary Data • For UHF/VHF frequency converters and local oscillators. • /T = 2.2 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BF 777


    OCR Scan     		PDF Q62702-F1426 OT-23 fl23Sb05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon RF Transistor BFQ 76 • For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. • Complementary type: BFQ 71 NPN . ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F804 ft235bD5 BFQ76 fl235bQ5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF BFP181R 900MHz Q62702-F1685 OT-143R 235fc

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M


    OCR Scan     		PDF BCP53M Q62702-C2592 Q62702-C2593 Q62702-C2594 SCT-595 6E35bOS 02BShD5 B35b05

    TRANSISTOR S1d

    Abstract: AX 1101
    Text: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type


    OCR Scan     		PDF Q62702-A1243 SCT-595 EHP00844 TRANSISTOR S1d AX 1101

    marking GG

    Abstract: marking code 604 SOT23
    Text: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package


    OCR Scan     		PDF OT-23 marking GG marking code 604 SOT23

    ac 0624 transistor 17-33

    Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
    Text: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code


    OCR Scan     		PDF F1217 OT-143 ac 0624 transistor 17-33 uc 1604 0166 415 04 1 060 transistor cq 529

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 521 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=1 kil, R2=1 kfl FL BCR 521 XVs Pin Configuration Q62702-C2355 1 =B Package o II CO Marking Ordering Code LU II <\J


    OCR Scan     		PDF Q62702-C2355 OT-23 a235bOS BS35bOS

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings


    OCR Scan     		PDF Q62702-F979 OT-23 EHT07072

    transistor BF 199

    Abstract: BF 199 bf199 transistor A11A
    Text: SIEM ENS BF 199 NPN Silicon RF Transistor • For common emitter IF TV amplifier stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 199 - Q62702-F355 Pin Configuration 1 2 3 C E Package1 TO-92 B Maximum Ratings Parameter


    OCR Scan     		PDF Q62702-F355 D0bb74b 23SbGS DDbb747 00bb74fl transistor BF 199 BF 199 bf199 transistor A11A