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    TRANSISTOR MARKING CODE 1P Search Results

    TRANSISTOR MARKING CODE 1P Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE 1P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STD13005

    Abstract: No abstract text available
    Text: STD13005 Semiconductor NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code


    Original     		PDF STD13005 STD13005 O-220AB KSD-T0P016-000 KSD-T0P016 O-220AB) KSD-T0P016-000) KRB-3002)

    Untitled

    Abstract: No abstract text available
    Text: STD13005FC Semiconductor NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control PIN Connection C B Ordering Information Type NO. Marking Package Code


    Original     		PDF STD13005FC STD13005FC STD13005 O-220F-3SL KSD-T0T005-000 KSD-T0T005 KSD-T0T005-000) KRB-3002)

    Untitled

    Abstract: No abstract text available
    Text: STD13005F Semiconductor NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code


    Original     		PDF STD13005F STD13005 O-220F-3L KRB-3002)

    Untitled

    Abstract: No abstract text available
    Text: BC847B Transistors NPN General Purpose Transistor BC847B Features 1 BVCEO < 45V IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 Packaging type SST3 Marking G1F Code T116 Basic ordering unit (pieces) 3000


    Original     		PDF BC847B BC857B.

    transistor marking 44 sot23

    Abstract: marking code diode 04 Diode SMA marking code PD MARKING CODE 028a sot 23 schottky diode 40a marking 1PC on SEMICONDUCTOR MARKING transistor C5D SOT323 MOSFET P hFE-100
    Text: Discrete Semiconductor Sample Kit DC-DC Power Supply Applications Central Semiconductor sample kits provide designers with the discrete semiconductor devices ideal for their latest design challenges. The contents of this 3 part sample kit include examples of Central Semiconductor devices most


    Original     		PDF CMSH1-20ML CMSH2-20M CMSH2-20L CMSH3-20MA CMSH3-20L CMSH5-20 CS20ML CS220M 200mA CMDSH05-4 transistor marking 44 sot23 marking code diode 04 Diode SMA marking code PD MARKING CODE 028a sot 23 schottky diode 40a marking 1PC on SEMICONDUCTOR MARKING transistor C5D SOT323 MOSFET P hFE-100

    Untitled

    Abstract: No abstract text available
    Text: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. (6) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2 (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77


    Original     		PDF US5L11 2SB1710 RB461F 85Max. 15Max. US5L11 1000m

    transistor 21 2u

    Abstract: EMD38 DTA113Z DTC114Y EMT6 d38 marking transistor
    Text: EMD38 Transistors General purpose transistor isolated transistors EMD38 DTC114Y and DTA113Z are housed independently in a EMT6 package. zDimensions (Unit : mm) zApplications Driver EMT6 1.6 (6) (5) (4) 1pin mark (1) (2) (3) 0.22 zStructure NPN / PNP Silicon epitaxial planar digital transistor


    Original     		PDF EMD38 DTC114Y DTA113Z 10k/47k 1k/10k transistor 21 2u EMD38 DTA113Z DTC114Y EMT6 d38 marking transistor

    c125t

    Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
    Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-


    Original     		PDF DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA 005-Lr DTA114TUA DTC343TS -50mA, f-100MHz 50/1A rat10 C343T) c125t Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistor MMBT2222A-G NPN RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case: SOT-23, molded plastic. 1 2 0.079(2.00)


    Original     		PDF MMBT2222A-G OT-23 OT-23, MIL-STD-750, Collector-B00 QW-BTR30

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistor MMBT2222A-HF NPN RoHS Device Halogen Free Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case: SOT-23, molded plastic.


    Original     		PDF MMBT2222A-HF OT-23 OT-23, MIL-STD-750, QW-JTR08

    DI210

    Abstract: No abstract text available
    Text: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. (6) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2 (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77


    Original     		PDF US5L11 2SB1710 RB461F 85Max. 15Max. US5L11 DI210

    2SC1412

    Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
    Text: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type


    Original     		PDF 2SA1037AK SC-88A -50/iA -50pA --12V, AC221 2SC1412 VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK

    DTA124E

    Abstract: T110
    Text: IMB5A Transistors General purpose dual digital transistors IMB5A zExternal dimensions (Unit : mm) zFeature 1) Two DTA124E chips in a UMT or SMT package. IC(MAX) Pd °C V mA mA mW ∗ ROHM : SMT6 EIAJ : SC-74 2.9 1.9 0.95 0.95 (1) 0.3Min. 1.1 IO 1pin mark


    Original     		PDF DTA124E SC-74 200mW T110

    transistor 1PC

    Abstract: CMST2222A ic 455 marking 1PC
    Text: CMST2222A SURFACE MOUNT SUPERminiTM NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small


    Original     		PDF CMST2222A CMST2222A OT-323 100mA, 150mA, x10-4 transistor 1PC ic 455 marking 1PC

    TRANSISTOR code marking 1P 3

    Abstract: marking code 1p TRANSISTOR MARKING CODE 1P MMBT2222A transistor 1P Transistor MARKING 1P marking transistor 1p 1 1p transistor 1p transistor sot23 marking 1p transistor sot23
    Text: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT2222A 300mW, OT-23 MIL-STD-202, TRANSISTOR code marking 1P 3 marking code 1p TRANSISTOR MARKING CODE 1P MMBT2222A transistor 1P Transistor MARKING 1P marking transistor 1p 1 1p transistor 1p transistor sot23 marking 1p transistor sot23

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT2222A 300mW, OT-23 MIL-STD-202,

    transistor 1PC

    Abstract: CMST2222A 1pc marking
    Text: CMST2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general


    Original     		PDF CMST2222A OT-323 100mA, 150mA, x10-4 transistor 1PC CMST2222A 1pc marking

    Untitled

    Abstract: No abstract text available
    Text: CMST2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general


    Original     		PDF CMST2222A OT-323 100mA, 150mA, x10-4

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings


    OCR Scan     		PDF SMBT4124 Q68000-A8316 OT-23 flE35bQ5 G12255b fiE35bOS D1EE557 235b05

    diode U3d

    Abstract: diode marking code 777 diode U3d on PL360D u3d diode Transil diodes diode MARKING CODE U3D
    Text: Æ T SGS-THOMSON ì* [ S & [ i ¥ [e m d PL360D (§ ì TRANSIL FEATURES • ■ . ■ > PEAK PULSE POWER= 300 W <§> 1ms. BREAKDOWN VOLTAGE = 330 V min. UNIDIRECTIONAL TRANS IL. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR . DESCRIPTION


    OCR Scan     		PDF PL360D PL360D GG4I173D diode U3d diode marking code 777 diode U3d on u3d diode Transil diodes diode MARKING CODE U3D

    transistor BC 575

    Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
    Text: T E L E F U N K E N E L E C T R O N IC m D fllC fl'îSO Q 'îb 000533 b 3 BFY 90 Ml e l e c t r o n i c Creative Technologies Silicon NPN Epitaxial Planar R F Transistor Applications: General up to GHz range Features: • Power gain 8 dB 800 MHz • Noise figure < 5 dB


    OCR Scan     		PDF 569-GS transistor BC 575 BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90

    transistor bc 237c

    Abstract: 629t
    Text: ii TELEFUNKEN ELECTRONIC : 1 ?E D • ô 'të O O 'ib DOCHbCH S 627T •S 628T- S 629T TftKUKFOiMKIlK] electronic C rttb ve 1êeftnotog*e$ T -3 3 -O S' Silicon NPN Epitaxial Planar Power Transistors Applications: General at high supply voltages Features: • High reverse voltages


    OCR Scan     		PDF 15A3DIN E--07 transistor bc 237c 629t

    LB-215

    Abstract: No abstract text available
    Text: Central CMST2222A SURFACE MOUNT SUPERmini NPN SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal,


    OCR Scan     		PDF CMST2222A 100mA, 150mA- 150mA, OT-323 OT-323 LB-215

    Untitled

    Abstract: No abstract text available
    Text: Central" CMST2222A Semiconductor Corp. SUPERmmi NPN SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal,


    OCR Scan     		PDF CMST2222A OT-323 150mA, OT-323 26-September