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    TRANSISTOR MARKING CODE 1325 Search Results

    TRANSISTOR MARKING CODE 1325 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE 1325 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E142 wafer format

    Abstract: HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28
    Text: DL140/D Rev. 6, Jan-2001 High Performance ECL Data ECLinPS and ECLinPS Lite™ High Performance ECL Device Data ECLinPS, ECLinPS Lite, and Low Voltage ECLinPS DL140/D Rev. 6, Jan–2001  SCILLC, 2001 Previous Edition  2000 “All Rights Reserved”


    Original     		PDF DL140/D Jan-2001 r14525 E142 wafer format HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28

    transistor P2F

    Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz


    Original     		PDF FPD2000AS FPD2000AS 350mA transistor P2F p2f 250 PHEMT marking code a p2F 45 MIL-HDBK-263 40 P1dB 2W transistor marking code 1325

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original     		PDF FPD2000AS FPD2000AS 350mA

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PS2702-1 R08DS0099EJ0300 Rev.3.00 Jan 29, 2013 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES DESCRIPTION The PS2702-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlingtonconnected phototransistor.


    Original     		PDF PS2702-1 R08DS0099EJ0300 PS2702-1 PS2702-1-F3 E72422

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PS2703-1 R08DS0098EJ0300 Rev.3.00 Jan 29, 2013 HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE SOP MULTI PHOTOCOUPLER SERIES DESCRIPTION The PS2703-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon


    Original     		PDF PS2703-1 R08DS0098EJ0300 PS2703-1 PS2703-1-F3 E72Taiwan

    motorola HEP cross reference

    Abstract: EPT 4045 KPT23 motorola HEP 320 cross reference vef 202 manual KEP52 MC10EP016 HEP 801 hep51 HEP64
    Text: BR1513/D Rev. 2, Apr-2001 ECLinPS Plus Device Data ECLinPS Plus Device Data Advanced ECL in Picoseconds BR1513/D Rev. 2, Apr–2001  SCILLC, 2001 Previous Edition  2000 “All Rights Reserved” ECLinPS, ECLinPS Lite, and ECLinPS Plus are trademarks of Semiconductor Components Industries, LLC.


    Original     		PDF BR1513/D Apr-2001 r14525 DLD601 motorola HEP cross reference EPT 4045 KPT23 motorola HEP 320 cross reference vef 202 manual KEP52 MC10EP016 HEP 801 hep51 HEP64

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    intel 845 MOTHERBOARD pcb CIRCUIT diagram

    Abstract: 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a
    Text: DL128/D Rev. 7, Mar-2002 Analog Integrated Circuits Power Management, Signal Conditioning and ASSP Devices Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF DL128/D Mar-2002 r14525 DL128 intel 845 MOTHERBOARD pcb CIRCUIT diagram 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a

    ecu bosch 7.4.4

    Abstract: tle 4417 ecu bosch 7.4.5 smd transistor wk3 tle4417 sen 1327 gas sensor ecu bosch 7.4.6 bosch ecu schematic ecu bosch 7.4.3 bosch ecu pinout
    Text: D a t a B o o k, R e v . 1 . 0, J a n . 20 0 4 Supply & Communications V o l t a g e R eg u l a t o r , L E D - D r i v e r , DC/DC-Converter, Bus-Transceiver Automotive Power N e v e r s t o p t h i n k i n g . Edition 2004-01-01 Published by Infineon Technologies AG,


    Original     		PDF non-100% ecu bosch 7.4.4 tle 4417 ecu bosch 7.4.5 smd transistor wk3 tle4417 sen 1327 gas sensor ecu bosch 7.4.6 bosch ecu schematic ecu bosch 7.4.3 bosch ecu pinout

    EPT25

    Abstract: KPT25 MC100EPT25
    Text: MC100EPT25 -3.3V / -5V Differential ECL to +3.3V LVTTL Translator Description The MC100EPT25 is a Differential ECL to LVTTL translator. This device requires +3.3 V, −3.3 V to −5.2 V, and ground. The small outline 8−lead package and the single gate of the EPT25 make it ideal


    Original     		PDF MC100EPT25 MC100EPT25 EPT25 MC100EPT25/D KPT25

    KEP25

    Abstract: MC100EPT25MNR4
    Text: MC100EPT25 −3.3V / −5V Differential ECL to +3.3V LVTTL Translator Description The MC100EPT25 is a Differential ECL to LVTTL translator. This device requires +3.3 V, −3.3 V to −5.2 V, and ground. The small outline 8−lead package and the single gate of the EPT25 make it ideal


    Original     		PDF MC100EPT25 EPT25 KEP25 MC100EPT25/D MC100EPT25MNR4

    EPT25

    Abstract: KPT25 MC100EPT25
    Text: MC100EPT25 −3.3V / −5V Differential ECL to +3.3V LVTTL Translator Description The MC100EPT25 is a Differential ECL to LVTTL translator. This device requires +3.3 V, −3.3 V to −5.2 V, and ground. The small outline 8−lead package and the single gate of the EPT25 make it ideal


    Original     		PDF MC100EPT25 MC100EPT25 EPT25 MC100EPT25/D KPT25

    Untitled

    Abstract: No abstract text available
    Text: MC100EPT25 -3.3V / -5V Differential ECL to +3.3V LVTTL Translator Description The MC100EPT25 is a Differential ECL to LVTTL translator. This device requires +3.3 V, −3.3 V to −5.2 V, and ground. The small outline 8−lead package and the single gate of the EPT25 make it ideal


    Original     		PDF MC100EPT25 MC100EPT25 EPT25 MC100EPT25/D

    EPT25

    Abstract: KPT25 MC100EPT25
    Text: MC100EPT25 −3.3V / −5V Differential ECL to +3.3V LVTTL Translator Description The MC100EPT25 is a Differential ECL to LVTTL translator. This device requires +3.3 V, −3.3 V to −5.2 V, and ground. The small outline 8−lead package and the single gate of the EPT25 make it ideal


    Original     		PDF MC100EPT25 MC100EPT25 EPT25 MC100EPT25/D KPT25

    EPT25

    Abstract: KPT25 MC100EPT25 MC100EPT25D MC100EPT25DR2 MC100EPT25DT MC100EPT25DTR2
    Text: MC100EPT25 -3.3V / -5VĄDifferential ECL to +3.3V LVTTL Translator The MC100EPT25 is a Differential ECL to LVTTL translator. This device requires +3.3 V, –3.3 V to –5.2 V, and ground. The small outline 8–lead package and the single gate of the EPT25 make it ideal


    Original     		PDF MC100EPT25 MC100EPT25 EPT25 r14525 MC100EPT25/D KPT25 MC100EPT25D MC100EPT25DR2 MC100EPT25DT MC100EPT25DTR2

    EPT25

    Abstract: KPT25 MC100EPT25 MC100EPT25D MC100EPT25DR2
    Text: MC100EPT25 -3.3V / -5VĄDifferential ECL to LVTTL Translator The MC100EPT25 is a Differential ECL to LVTTL translator. This device requires +3.3 V, –3.3 V to –5.2 V, and ground. The small outline 8–lead package and the single gate of the EPT25 make it ideal


    Original     		PDF MC100EPT25 MC100EPT25 EPT25 r14525 MC100EPT25/D KPT25 MC100EPT25D MC100EPT25DR2

    mr 4020 pin assignment

    Abstract: E137 MC100E137 MC100E137FN MC100E137FNR2 MC10E137 MC10E137FN MC10E137FNR2 LM 4800 100E137
    Text: MC10E137, MC100E137 5VĄECL 8ĆBit Ripple Counter The MC10E/100E137 is a very high speed binary ripple counter. The two least significant bits were designed with very fast edge rates while the more significant bits maintain standard ECLinPSt output edge rates. This allows the counter to operate at very high frequencies while


    Original     		PDF MC10E137, MC100E137 MC10E/100E137 r14525 MC10E137/D mr 4020 pin assignment E137 MC100E137 MC100E137FN MC100E137FNR2 MC10E137 MC10E137FN MC10E137FNR2 LM 4800 100E137

    E137

    Abstract: MC100E137 MC100E137FN MC100E137FNR2 MC10E137 MC10E137FN MC10E137FNR2
    Text: MC10E137, MC100E137 5VĄECL 8ĆBit Ripple Counter The MC10E/100E137 is a very high speed binary ripple counter. The two least significant bits were designed with very fast edge rates while the more significant bits maintain standard ECLinPSt output edge rates. This allows the counter to operate at very high frequencies while


    Original     		PDF MC10E137, MC100E137 MC10E/100E137 r14525 MC10E137/D E137 MC100E137 MC100E137FN MC100E137FNR2 MC10E137 MC10E137FN MC10E137FNR2

    KEP60

    Abstract: No abstract text available
    Text: MC100EP16F 3.3V / 5V ECL Differential Receiver/Driver With Reduced Output Swing The MC100EP16F is a differential receiver/driver. The device is functionally equivalent to the EP16 device with higher performance capabilities. With reduced output swings, rise/fall transition times are


    Original     		PDF MC100EP16F EP16F MC100EP16F AND8020 KEP60

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    marking 93A

    Abstract: transistor marking code 1325 b 11061
    Text: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 BFR 93A R2s Q62702-F1086 1= B ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1086 OT-23 900MHz marking 93A transistor marking code 1325 b 11061

    4046 application note philips

    Abstract: transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 1FT sot23-6 805 399-4 International Power Sources marking 683 choke IEC134
    Text: Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL LEE1015TA 7 iio a 2 b SbE oa4bnG t5t « p h i n DESCRIPTION APPLICATIO N S Diffused emitter ballasting resistors providing excellent


    OCR Scan     		PDF OT122 LEE1015TA 711002b 004tnG OT122 T-33-05 LEE1015TA 711Qfl2b 4046 application note philips transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 1FT sot23-6 805 399-4 International Power Sources marking 683 choke IEC134

    TRANSISTOR NPN 6822

    Abstract: 4046 application note philips 6822 npn transistor 6822 D 1398 Transistor 22716 transistor transistor 3305 d 1556 transistor IEC134 LEE1015TA
    Text: Philips Semiconductors Product specification -r ^ S > 3 -0 S > NPN silicon planar epitaxial microwave power transistor P H IL IP S INTERNATIONAL LEE1015TA 711Q82b OÜMbnG T5T • P H I N SbE DESCRIPTION APPLICAT IO N S Diffused emitter ballasting resistors providing excellent


    OCR Scan     		PDF LEE1015TA 711G82b OT122 T-33-05 711002b 004b200 TRANSISTOR NPN 6822 4046 application note philips 6822 npn transistor 6822 D 1398 Transistor 22716 transistor transistor 3305 d 1556 transistor IEC134 LEE1015TA