BCX70L
Abstract: BCX70
Text: UTC BCX70 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR MARKING 1 CG 2 3 SOT-23 1: Emitter 2: Base 3: Collector *Pb-free plating product number: BCX70L ABSOLUTE MAXIMUM RATINGS Ta = 25℃ unless otherwise noted PARAMETER Collector-Base Voltage
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BCX70
OT-23
BCX70L
QW-R206-080
BCX70L
BCX70
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BF998W
Abstract: SOT 343 MARKING BF BF998
Text: BF998W Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor 4 with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BF998W
VPS05605
OT-343
Cha00
EHT07305
EHT07306
May-05-1999
BF998W
SOT 343 MARKING BF
BF998
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bf998
Abstract: bf998 mosfet tetrode application note VPS05178
Text: BF998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality factor 4 For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BF998
VPS05178
OT143
EHT07305
EHT07306
Aug-10-2001
bf998
bf998 mosfet tetrode application note
VPS05178
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BF998W
Abstract: 998 transistor bf998 102001 transistor BF 998
Text: BF998W Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor 4 with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BF998W
VPS05605
OT343
EHT07305
EHT07306
Aug-10-2001
BF998W
998 transistor
bf998
102001
transistor BF 998
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BF998R
Abstract: 998 transistor transistor BF 998
Text: BF998R Silicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration
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BF998R
OT143R
sold00
EHT07305
EHT07306
Aug-10-2001
BF998R
998 transistor
transistor BF 998
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k d 998 0
Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
Text: BF 998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality factor 4 For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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VPS05178
OT-143
Res00
EHT07305
EHT07306
Oct-26-1999
k d 998 0
transistor BF 998
998 transistor
bf998
EHT0730
VPS05178
BF 998
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marking code g1s
Abstract: Q62702-F1129 D 998 TRANSISTOR
Text: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO
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Q62702-F1129
OT-143
marking code g1s
Q62702-F1129
D 998 TRANSISTOR
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Silicon N Channel MOSFET Tetrode
Abstract: Q62702-F1772 marking code g1s BF 2000W
Text: BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor 4 with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code BF 2000W NDs Q62702-F1772 VPS05605 Pin Configuration
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Q62702-F1772
VPS05605
OT-343
Silicon N Channel MOSFET Tetrode
Q62702-F1772
marking code g1s
BF 2000W
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BF998
Abstract: marking code GL Q62702-F1129 d 998 transistor circuit
Text: Silicon N Channel MOSFET Tetrode ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz BF 998 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO Q62702-F1129
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Q62702-F1129
OT-143
BF998
marking code GL
Q62702-F1129
d 998 transistor circuit
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marking code g1s
Abstract: Q62702-F1771 VPS05178 marking G2s
Text: BF 2000 Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor with high S/C quality factor 4 • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code Pin Configuration BF 2000 NDs 1=S Q62702-F1771
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Q62702-F1771
VPS05178
OT-143
marking code g1s
Q62702-F1771
VPS05178
marking G2s
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MMIC SOT 363 marking CODE 77
Abstract: SMD Transistor Marking Code 71 SOT 23 smd transistor marking 329 MMIC SOT 363 marking CODE 82 SMD Transistor in sot363 MMIC SOT 363 marking CODE 68 SOT363-6 MARKING 67 SOT-363 y5s 0022 MMIC SOT 363 marking CODE 86
Text: GaAs MMIC CGY 59W Data Sheet • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7 V to 6 V systems • Biased monolithic microwave IC (MMIC) • Easily matchable to 50 W • No bias coil needed • Single positive supply voltage • Low noise figure and high gain
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P-SOT363-6-1
Q62702
EHT08796
GPS05604
MMIC SOT 363 marking CODE 77
SMD Transistor Marking Code 71 SOT 23
smd transistor marking 329
MMIC SOT 363 marking CODE 82
SMD Transistor in sot363
MMIC SOT 363 marking CODE 68
SOT363-6
MARKING 67 SOT-363
y5s 0022
MMIC SOT 363 marking CODE 86
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Untitled
Abstract: No abstract text available
Text: CMBT4126 GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking CMBT4126 = 5E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0_ 2.8 0.14 Ó.09 0.48 038 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.4 2.6 1.2 2.4 R0.1 .004 ' _1. 02 _ 0.12
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CMBT4126
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2SC5053
Abstract: No abstract text available
Text: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package package marking: 2SC5053; CG-*, where ★ is hFE code PC = 2Wwhen mounted on a 40x 40 x 0.7 mm ceramic substrate 2SC5053 (MPT3) . 5 »02 2-a, 1.6 * 0.1 * =Ea_ TT
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2SC5053
SC-62)
2SC5053;
2SA1900
2SC5053
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2SC5053
Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
Text: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate
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2SC5053
SC-62)
2SC5053;
2SA1900
2SC5053
bo78
2SC5053 NPN
transistor bb3
marking code 43b
marking CODE 43B transistor
2SA1900
T100
Transistor npn
43B MARKING
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 1= B Q62702-F1519 Ö II CO RBs LU II CM
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Q62702-F1519
OT-323
IS21el2
G12171D
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BF970
Abstract: No abstract text available
Text: SIEMENS PNP Silicon RF Transistor BF 970 • For UHF mixer and oscillator stages Type Marking Ordering Code BF 970 - Q62702-F650 Pin Configuration 1 2 3 B C Package1* E T-plast Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Veto 35
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Q62702-F650
023SbOS
BF970
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
BFG193
Q62702-F1291
OT-223
235b05
Q12177D
D1E1771
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2SA amplifier
Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Text: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K
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2SA1514K
2SA1579
SC-59)
SC-70)
2SA1579;
-120V
2SC3906K
2SC4102
2SA1514K
2SA amplifier
H1000I
2SA1579
2SC4102
transistor 2SA
transistor PNP
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BF 988 Silicon N Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code BF 988 - Q62702-F36 Pin Configuration 2 4 1 3 S D Û2 Package1
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Q62702-F36
300MHz
r-700
fl235b05
00bbfl73
EHM070I2
EHM07013
00bb074
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d 998 transistor circuit
Abstract: No abstract text available
Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998
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Q62702-F1129
T-143
M27ol
BB5151
J8B515
d 998 transistor circuit
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transistor C5001
Abstract: C5001 transistor transistor marking C5001 2SC5001F5 C5001 R transistor B 560
Text: 2SC5001F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: C5001 where ★ is hF£ code and □ is lot number • 2SC5001F5 (CPT F5) 51 |— high-speed switching, tf = 0.3 |is for Ic = 6 A • low collector saturation voltage,
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2SC5001F5
SC-63)
C5001
10Adc
2SA1834
2SC5001F5
transistor C5001
C5001 transistor
transistor marking C5001
C5001 R
transistor B 560
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998
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62702-F1129
TheT07304
fi235bQ5
D1E174E
Q1517M3
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BF167
Abstract: transistor BF 37
Text: TELEFUNKEN ELECTRONIC aie D fi^SDO^b OOOSlbO B F 167 TTiOJlIFiyiKlCSiKI electronic Creative Techrxriogtes Silicon NPN Planar RF Transistor Applications! Controlled video IF amplifier stages in common emitter configuration Features: • Small feedback capacitance
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569-GS
BF167
transistor BF 37
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BFY88
Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration
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i200Rb
D0DS332
ft-11
569-GS
000s154
hal66
if-11
BFY88
Telefunken u 237
transistor marking code 2C
BFY 88
telefunken C80
ui77
silicon npn planar rf transistor sot 143
IMB 06 C
BFY 52 transistor
95288
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