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    TRANSISTOR MARKING C GHZ Search Results

    TRANSISTOR MARKING C GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING C GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-F42

    Abstract: No abstract text available
    Text: BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code Pin Configuration BF 517 LRs 1=B Q62702-F42 2=E Package 3=C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Collector-emitter voltage


    Original     		PDF Q62702-F42 OT-23 Aug-02-1996 500MHz Q62702-F42

    transistor marking MCs

    Abstract: SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11
    Text: BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration BFS 17W MCs 1=B Q62702-F1645 2=E Package 3=C SOT-323 Maximum Ratings of any single Transistor Parameter


    Original     		PDF Q62702-F1645 OT-323 Nov-28-1996 transistor marking MCs SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11

    BF998W

    Abstract: SOT 343 MARKING BF BF998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998W VPS05605 OT-343 Cha00 EHT07305 EHT07306 May-05-1999 BF998W SOT 343 MARKING BF BF998

    bf998

    Abstract: bf998 mosfet tetrode application note VPS05178
    Text: BF998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998 VPS05178 OT143 EHT07305 EHT07306 Aug-10-2001 bf998 bf998 mosfet tetrode application note VPS05178

    BF998W

    Abstract: 998 transistor bf998 102001 transistor BF 998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998W VPS05605 OT343 EHT07305 EHT07306 Aug-10-2001 BF998W 998 transistor bf998 102001 transistor BF 998

    BF998R

    Abstract: 998 transistor transistor BF 998
    Text: BF998R Silicon N-Channel MOSFET Tetrode  Short-channel transistor with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration


    Original     		PDF BF998R OT143R sold00 EHT07305 EHT07306 Aug-10-2001 BF998R 998 transistor transistor BF 998

    k d 998 0

    Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
    Text: BF 998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF VPS05178 OT-143 Res00 EHT07305 EHT07306 Oct-26-1999 k d 998 0 transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998

    SOT 23 CODE MCS

    Abstract: transistor marking MCs Q62702-F940 bfs 11 SOT 23 marking MCS
    Text: BFS 17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. Type Marking Ordering Code Pin Configuration BFS 17P MCs 1=B Q62702-F940 2=E Package 3=C SOT-23 Maximum Ratings of any single Transistor


    Original     		PDF Q62702-F940 OT-23 Aug-02-1996 500MHz SOT 23 CODE MCS transistor marking MCs Q62702-F940 bfs 11 SOT 23 marking MCS

    marking code g1s

    Abstract: Q62702-F1129 D 998 TRANSISTOR
    Text: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO


    Original     		PDF Q62702-F1129 OT-143 marking code g1s Q62702-F1129 D 998 TRANSISTOR

    npn transistor sot-89 MARKING AG

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BFQ 19S • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA. 6 CECC-type available: C E C C 50002/259. Type Marking Ordering code tape and reel


    OCR Scan     		PDF OT-89 npn transistor sot-89 MARKING AG

    sot-23 MARKING CODE ZA

    Abstract: sot-23 CODE 41 bfs17p mc
    Text: NPN Silicon RF Transistor BFS17P • For broadband amplifiers up to 1 G H z at collector currents from 1 to 20 mA. E C E C C -typ e available: C E C C 50002/262. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code


    OCR Scan     		PDF BFS17P OT-23 sot-23 MARKING CODE ZA sot-23 CODE 41 bfs17p mc

    BF 145 transistor

    Abstract: BF 923
    Text: SIEMENS BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code BF 517 LRs Pin Configuration Q62702-F42 1=B Package 2=E 3=C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Collector-emitter voltage


    OCR Scan     		PDF Q62702-F42 OT-23 500MHz BF 145 transistor BF 923

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code Pin Configuration BF 517 LRs Q62702-F42 1= B Package 2=E 3=C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Collector-emitter voltage


    OCR Scan     		PDF Q62702-F42 OT-23 fl535b05 500MHz fl53SLG5 D151b7Ã

    bft93

    Abstract: marking x1 B 647 AC transistor
    Text: BFT93 PNP Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. • Complementary type: BFR 93P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		PDF BFT93 BFT93 OT-23 marking x1 B 647 AC transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS17W NPN Silicon RF Transistor >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Marking Ordering Code B F S 17W M Cs Pin Configuration Q62702-F1645 1 =B Package ro il m Type 3 =C SOT-323 Maximum Ratings of any single Transistor


    OCR Scan     		PDF BFS17W Q62702-F1645 OT-323

    marking GG

    Abstract: marking code 604 SOT23
    Text: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package


    OCR Scan     		PDF OT-23 marking GG marking code 604 SOT23

    transistor MAR 543

    Abstract: transistor BFR91 IPS240 BFR91 transistor transistor mar 839 Telefunken u 439 transistor MAR 439
    Text: Temic BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • • • High power gain Low noise figure High transition frequency BFR91 Marking: BFR91


    OCR Scan     		PDF BFR91 BFR91 24-Mar-97 transistor MAR 543 transistor BFR91 IPS240 BFR91 transistor transistor mar 839 Telefunken u 439 transistor MAR 439

    bft92

    Abstract: DB642
    Text: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel)


    OCR Scan     		PDF BFT92 OT-23 bft92 DB642

    MAR 641 TRANSISTOR

    Abstract: transistor MAR 543 MAR 737 ic BFR92AR BFR92A mar 727 1646 IC 28B SOT-23 of ha 741 ic MAR 737
    Text: Tem ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23


    OCR Scan     		PDF BFR92A/BFR92AR BFR92A BFR92AR 26-Mar-97 26-Mar MAR 641 TRANSISTOR transistor MAR 543 MAR 737 ic mar 727 1646 IC 28B SOT-23 of ha 741 ic MAR 737

    sot marking code ZS

    Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
    Text: NPN Silicon RF Transistor BFR 106 • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code


    OCR Scan     		PDF OT-23 sot marking code ZS Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA BFS 17W MCs 1= B Q62702-F1645 Package O Pin Configuration II CO Marking Ordering Code LU II C\J Type SOT-323 Maximum Ratings of any single Transistor


    OCR Scan     		PDF Q62702-F1645 OT-323 D1521L5 fl235LD5 A235b05 01521b?

    TELEFUNKEN* U 413 B

    Abstract: MAR 641 TRANSISTOR transistor MAR 439
    Text: T emic BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-araplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96T Marking: BFR96T


    OCR Scan     		PDF BFR96T BFR96T 26-Mar-97 TELEFUNKEN* U 413 B MAR 641 TRANSISTOR transistor MAR 439

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking BF 2000W NDs Ordering Code Pin Configuration Q62702-F1772


    OCR Scan     		PDF Q62702-F1772 OT-343

    BFR92a MARKING P2

    Abstract: MAR 641 TRANSISTOR sot-23 marking RIP ha 1452 BFR92A
    Text: T em ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23


    OCR Scan     		PDF BFR92A/BFR92AR BFR92A BFR92AR 26-Mar-97 BFR92a MARKING P2 MAR 641 TRANSISTOR sot-23 marking RIP ha 1452