d82 sot23
Abstract: B772SS D882SS
Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23
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D882SS
B772SS
OT-23
QW-R206-018
d82 sot23
B772SS
D882SS
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d82 sot23
Abstract: D882* transistor
Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23
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D882SS
B772SS
OT-23
D882SSL
10sing
QW-R206-018
d82 sot23
D882* transistor
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d82 sot-23
Abstract: datasheet d882 B772SS D882SS d82 sot23
Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23
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D882SS
B772SS
OT-23
QW-R206-018
d82 sot-23
datasheet d882
B772SS
D882SS
d82 sot23
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TRANSISTOR S 838
Abstract: 339 marking code transistor TR13 339 marking code transistor manual
Text: Package Details DPAK Transistor Case Mechanical Drawing Part Marking: Full Part Number Mounting Pad Geometry Dimensions in mm R3 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details DPAK Transistor Case Tape Dimensions and Orientation (Dimensions in mm)
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EIA-481-2-A
TRANSISTOR S 838
339 marking code transistor
TR13
339 marking code transistor manual
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2SB1207
Abstract: No abstract text available
Text: Transistor 2SB1207 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 4.0±0.2 Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –10 V Emitter to base voltage
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2SB1207
2SB1207
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2SC4715
Abstract: No abstract text available
Text: Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage
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2SC4715
2SC4715
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N3010LS
Abstract: No abstract text available
Text: DMN3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V
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DMN3010LSS
AEC-Q101
J-STD-020D
DS31259
N3010LS
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Untitled
Abstract: No abstract text available
Text: DMN3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V
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DMN3010LSS
AEC-Q101
J-STD-020D
DS31259
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N2009LS
Abstract: No abstract text available
Text: DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V
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DMN2009LSS
AEC-Q101
J-STD-020D
DS31409
N2009LS
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Untitled
Abstract: No abstract text available
Text: DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V
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DMN2009LSS
AEC-Q101
J-STD-020D
DS31409
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test circuit 100MHz
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK211 TECHNICAL DATA N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. E B L FEATURES L ・High Forward Transfer Admittance. D ・Low Noise Figure : NF=2.5dB Typ. (f=100MHz). 2 H A 3 G : |yfs| =9mS(Typ.)
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100MHz)
KTK211
100MHz
test circuit 100MHz
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KTK211
Abstract: 20PFR dss2 ktk211y
Text: KTK211 SEMICONDUCTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES E B L L Low Noise Figure : NF=2.5dB Typ. (f=100MHz). : |yfs| =9mS(Typ.) H Extremely Low Reverse Transfer Capacitance.
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KTK211
100MHz)
100MHz
KTK211
20PFR
dss2
ktk211y
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em 234 stepper
Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
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O01ED0
H1-O01ED0-0106030ND
em 234 stepper
2SC5586 equivalent
8002 1018 AUDIO amplifier
2SC5586
2SC5487
voltage doubler bridge
varistor 560-2
2sa2003
se125n
SE090
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2SC5586 equivalent
Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements
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TM1641S-L
TM1661B-L
TM1661P-L
TM1661S-L
TM2541B-L
TM2561B-L
TM341M-L
TM341S-L
TM341S-R
TM361M-L
2SC5586 equivalent
2sc5586
2sa1694 equivalent
2SC5487
transistor 2SC5586
STR83159
em 234 stepper
SE090
SK 5154S
2SK3460 equivalent
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SB2202
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD. SB2202 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
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SB2202
SB2202
SB2202L-x-TM3-R
SB2202G-x-TM3-R
SB2202L-x-TN3-T
SB2202G-x-TN3-T
SB2202L-x-TN3-R
SB2202G-x-TN3-R
O-251
O-252
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2SB772 complement
Abstract: 2SB772L TO-92NL
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES
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2SB772
2SB772
2SD882
2SB772L-x-T60-K
2SB772L-x-T6C-K
2SB772L-x-TM3-T
2SB772L-x-TN3-R
2SB772L-x-T9N-B
2SB772L-x-T9N-K
2SB772G-x-T60-K
2SB772 complement
2SB772L TO-92NL
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 FEATURES SOT-223 * High current output up to 3A * Low saturation voltage * Complement to 2SB772S SOT-89 APPLICATIONS * Audio power amplifier * DC-DC convertor
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2SD882S
OT-223
2SB772S
OT-89
2SD882SL-x-AA3-R
2SD882SG-x-AA3-R
2SD882SL-x-AB3-R
2SD882SG-x-AB3-R
2SD882SL-x-T92-B
2SD882SG-x-T92-B
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DDTB122LU
Abstract: DMN601TK LMN400E01 N-Channel mosfet sot-363
Text: LMN400E01 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET NEW PRODUCT General Description • LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of
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LMN400E01
LMN400E01
OT-363
DS30750
DDTB122LU
DMN601TK
N-Channel mosfet sot-363
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Untitled
Abstract: No abstract text available
Text: LMN400E01 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET NEW PRODUCT General Description • LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of
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LMN400E01
LMN400E01
OT-363
DS30750
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KTK211
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTK211 n c h a n n e l ju n c t io n fie l d EFFECT TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • Low Noise Figure : NF=2.5dB Typ. (f=100MHz). • High Forward Transfer Admittance. ; I yts I = 9mS(Typ.)
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KTK211
100MHz)
100MHz
KTK211
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marking ADMI
Abstract: 2SK211
Text: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK211 Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS + 0.5 2.5-0.3 • • • Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)
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2SK211
100MHz)
SC-59
100MHz
marking ADMI
2SK211
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2SK881
Abstract: L180
Text: TOSHIBA 2SK881 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK881 Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 2.1 ± 0.1 1.25 ±0.1 • • Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admittance : |Yfs|= 9mS (Typ.)
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2SK881
100MHz)
SC-70
40MHz
2SK881
L180
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2SK211
Abstract: 2SK211Y 2SK211GR 2L2 marking
Text: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK211 Unit in mm FM TUNER APPLICATIONS. + 0.5 2 .5 - 0 .3 + 0.2 5 1 .5 - Q l 5 VHF BAND AM PLIFIER APPLICATIONS. Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)
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2SK211
100MHz)
SC-59
100MHz
2SK211
2SK211Y
2SK211GR
2L2 marking
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2SK211Y
Abstract: 2SK211
Text: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK211 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS + 0 .5 2 5- 0 3 • • • Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)
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2SK211
100MHz)
SC-59
2SK211Y
2SK211
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