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    TRANSISTOR MARKING 2L Search Results

    TRANSISTOR MARKING 2L Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING 2L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N914

    Abstract: LMBT5401LT1G
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽ We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G


    Original     		PDF LMBT5401LT1G 3000/Tape LMBT5401LT3G 10000/Tape OT-23 1N914 LMBT5401LT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G 2L 10000/Tape&Reel 2 SOT– 23 MAXIMUM RATINGS


    Original     		PDF LMBT5401LT1G 3000/Tape LMBT5401LT3G 10000/Tape

    1N914

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5401DW1T1G FEATURE 6 ƽ We declare that the material of product compliance with RoHS requirements. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5401DW1T1G


    Original     		PDF LMBT5401DW1T1G 3000/Tape LMBT5401DW1T3G 10000/Tape OT-363/SC-88 419B-01 419B-02. 1N914

    MMBT5401

    Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L


    Original     		PDF MMBT5401 -150V 350mW OT-23 MMBT5401L MMBT5401-AE3-R MMBT5401L-AE3-R QW-R206-011 MMBT5401 MMBT5401L MMBT5401L-AE3-R

    2L smd transistor

    Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBT5401 C-120 2L smd transistor CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l

    2L smd transistor

    Abstract: TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT5401 C-120 2L smd transistor TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401

    2L smd transistor

    Abstract: MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5401 C-120 2L smd transistor MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160

    sot-23 2L

    Abstract: No abstract text available
    Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 APPLICATIONS 3 *Telephone Switching Circuit *Amplifier MARKING SOT-23


    Original     		PDF MMBT5401 -150V 350mW OT-23 QW-R206-011 sot-23 2L

    sot-23 Marking 2L

    Abstract: MMBT5401 sot23 marking 2l
    Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 3 APPLICATIONS *Telephone Switching Circuit *Amplifier SOT-23 MARKING


    Original     		PDF MMBT5401 -150V 350mW OT-23 QW-R206-011 sot-23 Marking 2L MMBT5401 sot23 marking 2l

    2L smd transistor

    Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd transistor 2l
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking


    Original     		PDF OT-23 CMBT5401 C-120 2L smd transistor CMBT5401 TRANSISTOR SMD MARKING 2l smd transistor 2l

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2L


    Original     		PDF OT-23 MMBT5401 OT-23 MMBT5551 -10mA -50mA 30MHz

    MARKING 2L

    Abstract: MMBT5401 MMBT5551
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: 2L


    Original     		PDF OT-23 MMBT5401 OT-23 MMBT5551 -10mA -50mA 30MHz MMBT5401 MARKING 2L MMBT5551

    MMBT5401 SOT-23

    Abstract: marking 2L 2l sot23 marking transistor marking 2L
    Text: MMBT5401 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to MMBT5551 Ideal for medium power amplification and switching — MARKING: 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF MMBT5401 OT-23 OT-23 MMBT5551 -100A, -10mA -50mA -10mA 30MHz MMBT5401 SOT-23 marking 2L 2l sot23 marking transistor marking 2L

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transisto r Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5401 C-120

    Untitled

    Abstract: No abstract text available
    Text: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N -P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1 .1 5 0.9Ö~^ ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter


    OCR Scan     		PDF CMBT5401

    Untitled

    Abstract: No abstract text available
    Text: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 3 Pin configuration BASE EMITTER COLLECTOR 2.6 2.4 _1.02 o.sr 0.60 0.40 _2 .00_ ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CMBT5401 23A33T4

    CMBT5401

    Abstract: 2L TRANSISTOR
    Text: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PACKAGE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 ! 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 o.sr _2 .00_ 1.80 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CMBT5401 CMBT5401 2L TRANSISTOR

    DTC124XK equivalent

    Abstract: No abstract text available
    Text: DTC124XK NPN Bias Resistor Transistor 3* ° '' 0.4 2L The built-in bias resistor allows inverter circuit configu­ ration without external resistors for input. g Pin configuration 1 = Collector/OUT 2 = Base/I N 3 = Emitter/GND m Top View ; Marking DC4 OUT


    OCR Scan     		PDF DTC124XK OT-23 DTC124XK equivalent

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1492 OT-323 IS211

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1501 OT-343

    transistor B 1184

    Abstract: No abstract text available
    Text: SIEMENS BFP182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • * r = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz BFP182R OT-143R Q62702-F1601 transistor B 1184

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    OCR Scan     		PDF 900MHz Q62702-F1492 OT-323 aS35bD5

    Transistor BFR 181w

    Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
    Text: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1491 OT-323 Transistor BFR 181w GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BF 775A NPN Silicon RF Transistor • Especially suitable for amplifiers and TV-sat tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775A LGs Q62702-F1250 1 =B Package


    OCR Scan     		PDF Q62702-F1250 OT-23 IS21/S