2FK transistor
Abstract: No abstract text available
Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units
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MMBT2907AK
MMBT2907AK
OT-23
2FK transistor
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2FK transistor
Abstract: MMBT2907AK fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor
Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units
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MMBT2907AK
MMBT2907AK
OT-23
2FK transistor
fairchild sot-23 Device Marking pc
PNP Epitaxial Silicon Transistor sot-23
a/smd 2fk transistor
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2FK transistor
Abstract: MMBT2907AK SYMBOL OF MMBT2907AK
Text: MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units V VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage
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MMBT2907AK
OT-23
MMBT2907AK
2FK transistor
SYMBOL OF MMBT2907AK
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F
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OT-23
MMBT2907A
OT-23
MMBT2222A)
-500mA
-150mA
-15mA
-500mA
-50mA
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marking 2f 3
Abstract: MMBT2222A MMBT2907A marking 2f
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
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OT-23
MMBT2907A
MMBT2222A)
-10mA
-500mA
-150mA
-15mA
-500mA
-50mA
marking 2f 3
MMBT2222A
MMBT2907A
marking 2f
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
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OT-23
MMBT2907A
OT-23
MMBT2222A)
Temperature-10V
-10mA
-500mA
-150mA
-15mA
-500mA
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2SA1037KGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SA1037KGP SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 SOT-23 .055 (1.40) .047 (1.20) MARKING * 2F- .019 (0.50) (2) .103 (2.64)
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2SA1037KGP
OT-23)
OT-23
150mW
120mW
2SA1037KGP
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2F PNP SOT23
Abstract: marking 2f 2f transistor SOt23
Text: MMBT2907A SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
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MMBT2907A
OT-23
OT-23
MMBT2222A)
-150mA
-15mA
-10mA
-500mA
2F PNP SOT23
marking 2f
2f transistor SOt23
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Untitled
Abstract: No abstract text available
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-23
QW-R206-030
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pnp 2f
Abstract: No abstract text available
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-23
QW-R206-030
pnp 2f
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pnp 2f
Abstract: marking 2F
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 1 2 MARKING 3 2F SOT-323 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-323
QW-R220-001
pnp 2f
marking 2F
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egs SOT23
Abstract: BC817K-40 thermal resistance
Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration
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BC817.
BC818.
BC807.
BC808.
BC817-16
BC817K-16*
BC817-25
BC817K-25*
BC817-25W
BC817K-25W*
egs SOT23
BC817K-40 thermal resistance
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transistor 6cs
Abstract: 6CS transistor 6as sot23 marking 6CS BC808 BC817 6bs transistor BC817-25 BC817-25W BC817K-16
Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration
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BC817.
BC818.
BC807.
BC808.
BC817-16
BC817K-16*
BC817-25
BC817K-25*
BC817-25W
OT323
transistor 6cs
6CS transistor
6as sot23
marking 6CS
BC808
BC817
6bs transistor
BC817-25
BC817-25W
BC817K-16
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2907 TRANSISTOR PNP
Abstract: 2907 MMBT2222A SMBT2222A
Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F
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SMBT2907A/MMBT2907A
SMBT2222A
MMBT2222A
SMBT2907A/MMBT2907A
2907 TRANSISTOR PNP
2907
MMBT2222A
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K2 SOT23-3
Abstract: sot23 marking zs BFR35AP BFR35A
Text: BFR35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking
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BFR35AP
VPS05161
Aug-01-2001
K2 SOT23-3
sot23 marking zs
BFR35AP
BFR35A
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SMBT2907AW
Abstract: MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
BCW66
SMBT2907AW
MARKING s1P
smbt2222a sot23 marking code
S1p MARKING
BCW66
77 ic marking code
transistor marking code 24
24 marking code transistor
transf
SMBT2222A SOT23
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s1P SOT23
Abstract: 619 SOT23-3 h11e
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
s1P SOT23
619 SOT23-3
h11e
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Untitled
Abstract: No abstract text available
Text: BFR35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking
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BFR35AP
VPS05161
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Untitled
Abstract: No abstract text available
Text: BFR35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking
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BFR35AP
VPS05161
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2907 TRANSISTOR PNP
Abstract: 2907 2907 pnp 2907 pnp transistor
Text: PNP Silicon Switching Transistor SXT 2907 A High current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings
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Q68000-A8300
OT-89
2907 TRANSISTOR PNP
2907
2907 pnp
2907 pnp transistor
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Untitled
Abstract: No abstract text available
Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking
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MT3S113P
SC-62
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MMBTA56 S2G
Abstract: MMBTA06 SMBTA06
Text: SMBTA56/MMBTA56 PNP Silicon AF Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBTA06 / MMBTA06 NPN 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBTA56/MMBTA56 s2G Pin Configuration
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SMBTA56/MMBTA56
SMBTA06
MMBTA06
MMBTA56 S2G
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MARKING 7A SOT89
Abstract: SXT2907 SXT2907A T2907A
Text: SIEMENS PNP Silicon Switching Transistor SXT 2907 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings
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Q68000-A8300
OT-89
EHP00899
MARKING 7A SOT89
SXT2907
SXT2907A
T2907A
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2907 TRANSISTOR PNP
Abstract: transistor 2907 Q68000-A8300 MARKING 7C
Text: SIEMENS PNP Silicon Switching Transistor • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage SXT 2907 A Type Marking Ordering Code tape and reel PinC Contigui ation 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E
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Q68000-A8300
OT-89
----VBE-20V
fl53SbDS
23SLDS
Q155blfl
2907 TRANSISTOR PNP
transistor 2907
MARKING 7C
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