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    TRANSISTOR MARK NF Search Results

    TRANSISTOR MARK NF Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARK NF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mark G1 SOT-23

    Abstract: 2N5551 g1 2N5551 KST5551
    Text: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 Mark: G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KST5551 350mW OT-23 2N5551 mark G1 SOT-23 2N5551 g1 KST5551

    Untitled

    Abstract: No abstract text available
    Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and


    Original     		PDF SC70-6 FFB2227A FMB2227A FFB2227A FFB2222A FFB2907A

    SC70-6 SSOT6

    Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
    Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and


    Original     		PDF SC70-6 FFB2227A FMB2227A FFB2227A FFB2222A FFB2907A SC70-6 SSOT6 SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2907A

    FFB2227A

    Abstract: FFB2222A FFB2907A FMB2227A SC70-6
    Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and


    Original     		PDF SC70-6 FFB2227A FMB2227A FFB2227A FFB2222A FFB2907A FFB2222A FFB2907A FMB2227A SC70-6

    Untitled

    Abstract: No abstract text available
    Text: FFB2227A / FMB2227A FMB2227A FFB2227A E2 B2 C1 SC70-6 Mark: .AA Dot denotes pin #1 C2 TRANSISTOR TYPE pin #1 E1 B1 C2 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 SuperSOTä-6 Mark: .001 pin #1 B1 E2 B2 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and


    Original     		PDF FFB2227A FMB2227A FFB2227A SC70-6 FFB2222A FFB2907A

    audio transistor 274

    Abstract: MJ*15033 thermaltrak NJL1302D NJL3281D mje15033 MJL1302A MPSa06 equivalent 1N4148 MJE15032
    Text: AND8196/D ThermalTrakt Audio Output Transistors Prepared by: Mark Busier ON Semiconductor http://onsemi.com APPLICATION NOTE Each of the ThermalTrak audio output devices incorporates Ultrafast diode technology as the temperature sensing device along with the audio output transistor.


    Original     		PDF AND8196/D O-220) audio transistor 274 MJ*15033 thermaltrak NJL1302D NJL3281D mje15033 MJL1302A MPSa06 equivalent 1N4148 MJE15032

    KSC1815YTA

    Abstract: ksc1815
    Text: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier & High Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package


    Original     		PDF KSC1815 KSA1015 KSC1815YTA KSC1815YTA

    Untitled

    Abstract: No abstract text available
    Text: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier and High-Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package


    Original     		PDF KSC1815 KSA1015 KSC1815YTA

    KSA1015YTA

    Abstract: No abstract text available
    Text: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSA1015GRTA


    Original     		PDF KSA1015 KSC1815 KSA1015GRTA KSA1015YTA KSA1015YTA

    Untitled

    Abstract: No abstract text available
    Text: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted


    Original     		PDF MMBT5401 OT-23

    MMBT5401

    Abstract: mark B1 sot23
    Text: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted


    Original     		PDF MMBT5401 OT-23 MMBT5401 mark B1 sot23

    mmbt5401

    Abstract: No abstract text available
    Text: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted


    Original     		PDF MMBT5401 OT-23 mmbt5401

    y 331 Transistor

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C C B E TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 y 331 Transistor

    PN918

    Abstract: MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor
    Text: MMBT918 PN918 C E C B TO-92 SOT-23 E B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBT918 PN918 OT-23 PN918 MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    CBVK741B019

    Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 CBVK741B019 F63TNR MMBT918 PN2222N RF 107 transistor tc 144

    mmbt918

    Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 mmbt918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch

    MPSH10

    Abstract: MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
    Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 OT-23 MPSH10 MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters

    MPSH10 fairchild transistor

    Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
    Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 OT-23 MPSH10 MPSH10 fairchild transistor MMBTH10 Spice Model MPS-H10 MMBTH10 TRANSISTOR C 3223 1358p

    TRANSISTOR C 3223

    Abstract: MPSH10 MMBTH10 Spice Model NPN power transistor spice MMBTH10
    Text: N MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 OT-23 MPSH10 TRANSISTOR C 3223 MMBTH10 Spice Model NPN power transistor spice MMBTH10

    Untitled

    Abstract: No abstract text available
    Text: FMB1020 FMB1020 C2 E1 C1 pin #1 B1 E2 B2 TRANSISTOR TYPE SuperSOTä-6 Mark: .004 Dot denotes pin #1 C1 B1 E1 NPN C2 B2 E2 PNP NPN & PNP General Purpose Amplifier This complementary device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10


    Original     		PDF FMB1020 FMB100 FMB200

    Untitled

    Abstract: No abstract text available
    Text: Discrete POWER & Signal Technologies S iM IC D N P U C T O B MMBT918 PN918 C < \' TO-92 SOT-23 BE B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.


    OCR Scan     		PDF MMBT918 PN918 OT-23 400il, PN918

    PN918 transistor

    Abstract: No abstract text available
    Text: S E M IC O N D U Q T O H PN918 MMBT918 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 m A to 30 m A range. Sourced from Process 43. Absolute Maximum RâtinÇjS Symbol


    OCR Scan     		PDF PN918 MMBT918 PN918 PN918 transistor