TRANSISTOR MARK CODE H1 Search Results

TRANSISTOR MARK CODE H1 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR MARK CODE H1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
water level inductive sensor Abstract: obstacle sensors Text: 869 FIBER SENSORS Digital Mark Sensor Amplifier Built-in LX-100 SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ ■■Sensor selection guide.P.831~ ■■General precautions. P.1405	Original	LX-100 LX-101â LX-101-P LX-100 FZ-10 water level inductive sensor obstacle sensors	PDF
optocoupler bi-directional 4 pin Abstract: ADB62 OPTOCOUPLER MARKING CODE H11ADB H11ADB6 fairchild optocoupler H11ADB62 Text: 8-PIN BI-DIRECTIONAL TRANSISTOR OPTOCOUPLER H11ADB6 H11ADB61 H11ADB62 DESCRIPTION The H11ADB series optocouplers have two channels for high density applications. The inverse parallel channel orientation is ideal for applications which require data to be both transmitted and received on each side of the isolation boundary. Each	Original	H11ADB6 H11ADB61 H11ADB62 H11ADB E90700 optocoupler bi-directional 4 pin ADB62 OPTOCOUPLER MARKING CODE H11ADB6 fairchild optocoupler H11ADB62	PDF
Untitled Abstract: No abstract text available Text: 833 FIBER SENSORS Wafer Mapping Sensor M-DW1 Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 ■■Sensor selection guide. P.831~ LASER SENSORS PHOTOELECTRIC SENSORS	Original		PDF
Untitled Abstract: No abstract text available Text: 853 FIBER SENSORS Leak Detection Sensor Amplifier Built-in EX-F70 SERIES EX-F60 SERIES Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 ■■Sensor selection guide. P.831~	Original	EX-F70 EX-F60 panasonic-electric-wo661 EX-F70/ EX-F60	PDF
y1 marking code transistor Abstract: HSB1386I transistor mark code H1 Text: HI-SINCERITY Spec. No. : HI200201 Issued Date : 2002.02.01 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386I LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.	Original	HI200201 HSB1386I O-251 183oC 217oC 260oC y1 marking code transistor HSB1386I transistor mark code H1	PDF
h11cx Abstract: GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins Text: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled	Original	H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 E90700 H11C1 00V/400V h11cx GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins	PDF
HLB121I Abstract: marking code k1 MARK Y1 Transistor transistor mark code H1 Text: HI-SINCERITY Spec. No. : HE9027 Issued Date : 1996.11.06 Revised Date : 2004.09.24 Page No. : 1/4 MICROELECTRONICS CORP. HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching	Original	HE9027 HLB121I HLB121I O-251 183oC 217oC 260oC marking code k1 MARK Y1 Transistor transistor mark code H1	PDF
transistor mark code H1 Abstract: y1 marking code transistor HLB121I hlb121 HE9027 Text: HI-SINCERITY Spec. No. : HE9027 Issued Date : 1996.11.06 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching	Original	HE9027 HLB121I HLB121I O-251 183oC 217oC 260oC transistor mark code H1 y1 marking code transistor hlb121 HE9027	PDF
PT 1017 Abstract: transistor mark code H1 TL 434 transistor k 2837 HLB122I y1 marking code transistor Y2 MARKING MARK Y1 Transistor Text: HI-SINCERITY Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/5 MICROELECTRONICS CORP. HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching	Original	HE9030 HLB122I HLB122I O-251 183oC 217oC 260oC PT 1017 transistor mark code H1 TL 434 transistor k 2837 y1 marking code transistor Y2 MARKING MARK Y1 Transistor	PDF
MARKING W3 SOT23 TRANSISTOR Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*	Original	MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps	PDF
sot-235 g2 Abstract: mosfet mark code G4 marking h2 sot-23-5 marking H2 5pin marking H2 5-pin 5pin mosfet mark G4 sot-23-5 marking G2 Text: TC1188 TC1189 MAX8863/64 Pin-Compatible, Low-Dropout, 120mA Linear Regulators FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ Delivering up to 120mA, the TC1188 and TC1189 are fixed output, low-dropout linear regulators that operate from a +2.5V to +6.0V input range. The 50µA supply current	Original	TC1188 TC1189 MAX8863/64 120mA MAX8863/8864 120mA, out122 TC1188/1189-2 sot-235 g2 mosfet mark code G4 marking h2 sot-23-5 marking H2 5pin marking H2 5-pin 5pin mosfet mark G4 sot-23-5 marking G2	PDF
sot-235 g2 Abstract: marking h2 sot-23-5 MARKING G3 Transistor sot-23-5 marking G2 Text: TC1188 TC1189 MAX8863/64 PIN-COMPATIBLE LOW-DROPOUT, 100 mA LINEAR REGULATORS FEATURES GENERAL DESCRIPTION • ■ ■ ■ Delivering up to 100 mA, the TC1188 and TC1189 are fixed output, low-dropout linear regulators that operate from a +2.5V to +6.5V input range. The 50 µA supply current	Original	TC1188 TC1189 MAX8863/64 MAX8863/8864 TC1188/1189 OT-23A-5 SC-74A) TC1188/1189-1 sot-235 g2 marking h2 sot-23-5 MARKING G3 Transistor sot-23-5 marking G2	PDF
Untitled Abstract: No abstract text available Text: 425 FIBER SENSORS Slim Body Automatic Sensitivity Setting Photoelectric Sensor SU-7 SERIES SH SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ Amplifier-separated ■■Sensor selection guide. P.283~	Original	SH-82Râ SH-82Gâ SH-84R SUS304)	PDF
2N60 transistor Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648 Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor	Original	MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648	PDF

02n60 Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor	Original	MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 02n60 all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60E	PDF
marking code k1 Abstract: marking A1 TRANSISTOR HI127 Text: HI-SINCERITY Spec. No. : HE9017 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-251 • High DC current gain • Bult-in a damper diode at E-C Darlington Schematic	Original	HE9017 HI127 O-251 183oC 217oC 260oC marking code k1 marking A1 TRANSISTOR HI127	PDF
marking code k1 Abstract: marking A1 TRANSISTOR marking y1 HI122 Text: HI-SINCERITY Spec. No. : HI200102 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications.	Original	HI200102 HI122 O-251 HI122 183oC 217oC 260oC marking code k1 marking A1 TRANSISTOR marking y1	PDF
MOSFET MARK y2 Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to	Original	MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 MOSFET MARK H1 marking code k1 marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI	PDF
MOSFET MARK y2 Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1 Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to	Original	MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1	PDF
BT816 Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728 Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan	mm/13" O-92S) BT816 TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728	PDF
equivalent transistor TT 3034 Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718 Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages	OCR Scan	-335/H-135/D-40 -334/H-280/D-41 -334/H-280/D-41 -334/H-28Q/D-41 L-56SW-42/H-115 L-565/W-42/H-12 OT-23, SC-59 equivalent transistor TT 3034 transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718	PDF
transistor b722 Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034 Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan		PDF
equivalent transistor TT 3034 Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan		PDF
B861 transistor Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR Text: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan	J/U13 B861 transistor equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR	PDF

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TRANSISTOR MARK CODE H1 Search Results

TRANSISTOR MARK CODE H1 Result Highlights (5)

TRANSISTOR MARK CODE H1 Datasheets Context Search

water level inductive sensor

optocoupler bi-directional 4 pin

Untitled

Untitled

y1 marking code transistor

h11cx

HLB121I

transistor mark code H1

PT 1017

MARKING W3 SOT23 TRANSISTOR

sot-235 g2

sot-235 g2

Untitled

2N60 transistor

02n60

marking code k1

marking code k1

MOSFET MARK y2

MOSFET MARK y2

BT816

equivalent transistor TT 3034

transistor b722

equivalent transistor TT 3034

B861 transistor