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    TRANSISTOR MARK CODE Search Results

    TRANSISTOR MARK CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARK CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


    Original     		PDF

    transistor 21 2u

    Abstract: EMD38 DTA113Z DTC114Y EMT6 d38 marking transistor
    Text: EMD38 Transistors General purpose transistor isolated transistors EMD38 DTC114Y and DTA113Z are housed independently in a EMT6 package. zDimensions (Unit : mm) zApplications Driver EMT6 1.6 (6) (5) (4) 1pin mark (1) (2) (3) 0.22 zStructure NPN / PNP Silicon epitaxial planar digital transistor


    Original     		PDF EMD38 DTC114Y DTA113Z 10k/47k 1k/10k transistor 21 2u EMD38 DTA113Z DTC114Y EMT6 d38 marking transistor

    Untitled

    Abstract: No abstract text available
    Text: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. (6) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2 (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77


    Original     		PDF US5L11 2SB1710 RB461F 85Max. 15Max. US5L11 1000m

    DI210

    Abstract: No abstract text available
    Text: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. (6) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2 (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77


    Original     		PDF US5L11 2SB1710 RB461F 85Max. 15Max. US5L11 DI210

    CBVK741B019

    Abstract: F63TNR FDG6302P FFB3904 FFB3906 FFB3946 FMB3946 SC70-6 318 SC70-6
    Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AB FFB3946 / FMB3946 FMB3946 FFB3946 B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .002 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose


    Original     		PDF SC70-6 FFB3946 FMB3946 FFB3946 FFB3904 FFB3906 CBVK741B019 F63TNR FDG6302P FFB3904 FFB3906 FMB3946 SC70-6 318 SC70-6

    SC70-6 SSOT6

    Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
    Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and


    Original     		PDF SC70-6 FFB2227A FMB2227A FFB2227A FFB2222A FFB2907A SC70-6 SSOT6 SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2907A

    Untitled

    Abstract: No abstract text available
    Text: SP8K24FRA SP8K24 Transistor 4V Drive Nch+Nch MOSFET AEC-Q101 Qualified SP8K24 SP8K24FRA zDimensions Unit : mm zStructure Silicon N-channel MOSFET SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter


    Original     		PDF SP8K24FRA SP8K24 AEC-Q101

    RSS070N05

    Abstract: equivalent transistor rss070
    Text: RSS070N05 Transistor 4V Drive Nch MOS FET RSS070N05 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions


    Original     		PDF RSS070N05 RSS070N05 equivalent transistor rss070

    RSS095N05

    Abstract: TB 2500
    Text: RSS095N05 Transistor 4V Drive Nch MOS FET RSS095N05 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter 0.4Min. 3.9 6.0 zFeatures


    Original     		PDF RSS095N05 RSS095N05 TB 2500

    RSS060P05

    Abstract: No abstract text available
    Text: RSS060P05FRA RSS060P05 Transistor 4V Drive Pch MOSFET AEC-Q101 Qualified RSS060P05 RSS060P05FRA zDimensions Unit : mm zStructure Silicon P-channel MOSFET SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Built-in G-S Protection Diode.


    Original     		PDF RSS060P05FRA RSS060P05 AEC-Q101 RSS060P05

    Untitled

    Abstract: No abstract text available
    Text: RTQ025P02FRA RTQ025P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ025P02FRA RTQ025P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (1) (2) 0~0.1 (3) 1pin mark


    Original     		PDF RTQ025P02FRA RTQ025P02 AEC-Q101 RTQ025P02FRuipment

    SP8K24

    Abstract: voltage source inverter
    Text: SP8K24 Transistor 4V Drive Nch+Nch MOSFET SP8K24 zStructure Silicon N-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions zPackaging dimensions


    Original     		PDF SP8K24 SP8K24 voltage source inverter

    RSS110N03

    Abstract: No abstract text available
    Text: RSS110N03 Transistor 4V Drive Nch MOS FET RSS110N03 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching, DC/DC converter. Each lead has same dimensions zPackaging specifications


    Original     		PDF RSS110N03 RSS110N03

    Untitled

    Abstract: No abstract text available
    Text: SP8K24 Transistor 4V Drive Nch+Nch MOSFET SP8K24 zStructure Silicon N-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions zPackaging dimensions


    Original     		PDF SP8K24

    2SA1037AK

    Abstract: FML10
    Text: UML1N Transistors Low-frequency transistor UML1N zFeatures 1 The 2SA1037AK and a diode are housed independently in a UMT package. zExternal dimensions Unit : mm) UMT5 2.0 1.3 0.9 0.65 0.65 0.7 zEquivalent circuit (2) (1) (2) (3) (1) 1pin mark 0.2 0.15 0.1Min.


    Original     		PDF 2SA1037AK FML10 FML10

    Untitled

    Abstract: No abstract text available
    Text: BCV26 BCV26 C E SOT-23 B Mark: FD PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF BCV26 OT-23

    Untitled

    Abstract: No abstract text available
    Text: BCV27 BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BCV27 OT-23

    Untitled

    Abstract: No abstract text available
    Text: UML1N Transistors Low-frequency transistor UML1N zFeatures 1 The 2SA1037AK and a diode are housed independently in a UMT package. zExternal dimensions Unit : mm) UMT5 2.0 1.3 0.9 0.65 0.65 0.7 zEquivalent circuit (2) (1) (2) (3) (1) 1pin mark 0.2 0.15 0.1Min.


    Original     		PDF 2SA1037AK FML10

    RSS100N03

    Abstract: No abstract text available
    Text: RSS100N03 Transistor 4V Drive Nch MOS FET RSS100N03 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching, DC/DC converter. Each lead has same dimensions zPackaging specifications


    Original     		PDF RSS100N03 RSS100N03

    Untitled

    Abstract: No abstract text available
    Text: UML1N Transistors Low-frequency transistor UML1N Features 1 The 2SA1037AK and a diode are housed independently in a UMT package. External dimensions Unit : mm) UMT5 2.0 1.3 0.9 0.65 0.65 0.7 Equivalent circuit (2) (1) (2) (3) (1) 1pin mark 0.2 0.15 0.1Min.


    Original     		PDF 2SA1037AK FML10

    transistor A6A

    Abstract: No abstract text available
    Text: RSS060P05 Transistor 4V Drive Pch MOSFET RSS060P05 zStructure Silicon P-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (8)


    Original     		PDF RSS060P05 transistor A6A

    Untitled

    Abstract: No abstract text available
    Text: RTQ030P02FRA RTQ030P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ030P02FRA RTQ030P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 0~0.1 (3) 1pin mark


    Original     		PDF RTQ030P02FRA RTQ030P02 AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: RTQ035P02FRA RTQ035P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ035P02FRA RTQ035P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 0~0.1 (3) 1pin mark


    Original     		PDF RTQ035P02FRA RTQ035P02 AEC-Q101

    SP8K24

    Abstract: No abstract text available
    Text: SP8K24 Transistor 4V Drive Nch+Nch MOS FET SP8K24 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions


    Original     		PDF SP8K24 SP8K24