Untitled
Abstract: No abstract text available
Text: MS3023 RF & Microwave Transistors General Purpose Amplifier Applications GENERAL DESCRIPTION The MS3023 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz frequency range. Gold metallization and emitter ballasting provide long-term
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MS3023
MS3023
100pF
31mils,
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ATC 600F
Abstract: 200B MS3023
Text: MS3023 RF & Microwave Transistors General Purpose Amplifier Applications GENERAL DESCRIPTION The MS3023 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz frequency range. Gold metallization and emitter ballasting provide long-term
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MS3023
MS3023
Operation25
100pF
31mils,
ATC 600F
200B
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sunx fx 300
Abstract: FX-101P-Z FT-L80Y FT-V80Y FX-101-CC2 FX-100SERIES FT-WV42 npn transistor w19 D1063 sunx ft-a8
Text: DIGITAL FIBER SENSOR FX-100SERIES Conforming to EMC Directive Bringing digital fiber sensors closer 01/2007 New possibilities with digital fiber sensors. The FX series is a round 100 for success. Easy to read, multipurpose, and at an economical price. The FX series has been designed to be what customers want it to be.
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FX-100SERIES
CN-14A-C2
FX-101
FX-102
CN-14A-C1
CN-14A-C2
CN-14A-C3
CN-14A-C5
CE-FX100-10
sunx fx 300
FX-101P-Z
FT-L80Y
FT-V80Y
FX-101-CC2
FX-100SERIES
FT-WV42
npn transistor w19
D1063
sunx ft-a8
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sunx fx 300
Abstract: sunx ft-a8 npn transistor w19 transistor WT4 sunx dp 20 FX-mr1 wv42 W0472 FX-101P-Z WT4 Transistor
Text: DIGITAL FIBER SENSOR FX-100SERIES Conforming to EMC Directive Bringing digital fiber sensors closer New possibilities with digital fiber sensors. The FX series is a round 100 for success. Easy to read, multipurpose, and at an economical price. The FX series has been designed to be what customers want it to be.
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FX-100SERIES
FX-101
FX-102
CN-14A-C2
CN-14A-C1
CN-14A-C2
CN-14A-C3
CN-14A-C5
sunx fx 300
sunx ft-a8
npn transistor w19
transistor WT4
sunx dp 20
FX-mr1
wv42
W0472
FX-101P-Z
WT4 Transistor
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Untitled
Abstract: No abstract text available
Text: PHOTOELECTRIC SENSOR ULTRA-COMPACT PHOTOELECTRIC SENSOR Amplifier Built-in EX Lineup SERIES Conforming to EMC Directive UL Recognition Amplifier Built-in in this size! *1 *1 *1 Volume ratio Volume ratio Volume ratio approx. approx. approx. approx. 1/13 1/5
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CX-400
EX-10
EX-20
EX-30
CX-400
EX-10SERIES
Amplifie-32A
EX-32B
CE-EXLINE-10
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transistor number code book FREE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PIMZ2 NPN/PNP general purpose double transistor Objective specification 2003 Jun 02 Philips Semiconductors Objective specification NPN/PNP general purpose double transistor FEATURES PIMZ2 QUICK REFERENCE DATA
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M3D302
SCA75
613514/01/pp8
transistor number code book FREE
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transistor number code book FREE
Abstract: M3D302
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PIMZ2 NPN/PNP general purpose double transistor Product specification Supersedes data of 2003 Jun 02 2003 Jul 14 Philips Semiconductors Product specification NPN/PNP general purpose double transistor
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M3D302
SCA75
613514/02/pp7
transistor number code book FREE
M3D302
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E3X-DA11-S
Abstract: e3x-DA41-S d331 npn transistor E3X-DA41S digital object counter D331 PNP E3X-DA41TW-S E3X-DA-S e3x-dab11-s e3x-da41
Text: Digital Fiber Sensors E3X-DA-S The next-generation platform for a wide range of sensing • The industry's first Power Tuning function in a digital amplifier. • Large, easy-to-read displays that are clear even from a distance. Seven convenient display formats.
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E3X-DA11-S
E3X-DA41-S
E336-E1-01
75-344-7068/Fax:
0103-2M
E3X-DA11-S
e3x-DA41-S
d331 npn transistor
E3X-DA41S
digital object counter
D331 PNP
E3X-DA41TW-S
E3X-DA-S
e3x-dab11-s
e3x-da41
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Relais omron G4
Abstract: E3X-F51 E3X-A41 caracteristique E32-D22L CM241 E3X-VG11 E32-T16 E3X-A51 a51 ZENER DIODE
Text: CELLULE A FIBRE OPTIQUE IIE3X Distance de détection et caractéristiques de pointe pour cette cellule photoélectrique à fibre optique Distance de détection de 7 000 mm avec la fibre E32-T17L Grande rapidité de réponse : 20 µs E3X-F Système clignotant pour un réglage aisé de l’axe
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E32-T17L
E32-D32)
E39-F3A.
E39-F3A
E39-G3
E39-G3
E39-F3A
Relais omron G4
E3X-F51
E3X-A41
caracteristique
E32-D22L
CM241
E3X-VG11
E32-T16
E3X-A51
a51 ZENER DIODE
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E3XDA
Abstract: No abstract text available
Text: Digital Fiber Amplifier E3X-DA Digital Fiber Amplifier Provides High Performance and Ease of Use First amplifier to offer three user-selectable displays: digital level, percentage and analog display Flashing LED and digital display of light intensity simplifies optical axis alignment
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12-bit
1-800-55-OMRON
E305-E3-1
E3XDA
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E3X-NH41
Abstract: Power AMPLIFIER 6012 E32-D11R DC200 silicone oil E32-T24S E3X-NH11 E32-T11L E32-T12L E32-T17L E32-T21L
Text: E3X-NH Fine Tuning Fiber Photoelectric Sensor High-precision Sensing with Auto- and Manual-tuning Solves All the Problems of Conventional Models Suitable for high-precision positioning using the fine sensitivity adjustment function. Manual-tuning allows threshold adjustments while
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91/368/EEC,
E258-E1-3
E3X-NH41
Power AMPLIFIER 6012
E32-D11R
DC200 silicone oil
E32-T24S
E3X-NH11
E32-T11L
E32-T12L
E32-T17L
E32-T21L
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MOTOROLA mj300av120
Abstract: MJ300AV120 FLU1-60 max4283 equivalent of transistor D 2331 4221 motorola transistor
Text: 63.67254 M O T O R O L A SC XSTRS/R F lyiQYOROLA ST 89D 80000 D E | b3ki7254 DDflDODO Order this data sheet by MJ300AV120/D D | • SEMICONDUCTOR TECHNICAL DATA MJ300AV120 NPN Silico n Pow er Transistor Module Energy Management Series DU AL TR I-STA G E
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MJ300AV120/D
b3ki7254
MJ300AV120
MK145BP,
MOTOROLA mj300av120
MJ300AV120
FLU1-60
max4283
equivalent of transistor D 2331
4221 motorola transistor
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MJ300
Abstract: mj300av100 equivalent of transistor D 2331 diode l 0607 ip rating 4221 motorola transistor diode l 0607 max4283 SC3662 MJ300A
Text: 6367254 MOTOROLA SC MOTOROLA Tb XSTRS/R F 9 6D 8 1 5 1 5 D 7 '3 3 ~ 3 £ Order this data sheet by MJ300AV100/D DE | ti317ES4 ODfllSlS 5 SEMICONDUCTOR TECHNICAL DATA MJ300 AV 100 NPN S ilic o n P o w e r T ra n s is to r M odule Energy M anagem ent Series
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MJ300AV100/D
317ES4
MJ300
MK145BP,
MJ300AV100
mj300av100
equivalent of transistor D 2331
diode l 0607 ip rating
4221 motorola transistor
diode l 0607
max4283
SC3662
MJ300A
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4221 motorola transistor
Abstract: MOTOROLA 4221 MJ200
Text: 6 3 6 7 2 5 4 MOTOROLA S C <XS TR S/ R F MOTOROLA 89D 7 9 9 9 2 DElb3t,?ES4 7 |~ D T - J 5 - 3 S uraer this data sheet by MJ200AV120/D SEMICONDUCTOR TECHNICAL DATA NPN Silico n Pow er Transistor Module M J 2 0 0 A V 1 2 0 Energy Management Series DUAL TRI-STAGE
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MJ200AV120/D
MK145BP,
MJ200AV120
4221 motorola transistor
MOTOROLA 4221
MJ200
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2SC4663
Abstract: TP5V20FS
Text: i iv y - _ _ . F S SerieS Switching Power Transistor I W ß \f>£l3] 5a 2SC4663 NPN CTP5V20FS) — • - Ô2n3fi? 0003b3fl êOT Outline Dimensions A b s o lu te M axim um R a tin g s m Item i IE # Symbol Storage Temperature Junction Temperature a U9 9 ■
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02n307
2sc4663
CTP5V20FS)
tts111:
2SC4663
TP5V20FS
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MG400H1UL1
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hpE=80 Min. (Ic =400A) . Low Saturation Voltage
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MG400H1UL1
MG400H1UL1
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MG400G1UL1
Abstract: MG400G1UL1 (0E) MG400G1UL1+(0E) LF400A LF400
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400G1UL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h F E = 100 Min. (Ic=400A) . Low Saturation Voltage
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MG400G1UL1
MG400G1UL1
MG400G1UL1 (0E)
MG400G1UL1+(0E)
LF400A
LF400
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sot 23 marking code 2t
Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is
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OT-23
FMMT-A13
FMMT-A14
BCW67A
FMMT-A20
BCW67B
FMMT-A42
BCW67C
FMMT-A43
sot 23 marking code 2t
marking DG sot-23 NPN transistor
sot-23 MARKING CODE G1
MARKING NT SOT23
sot-23 l6
marking of m7 diodes
sot-23 marking LC
transistor ad 1v
m6 marking transistor sot-23
C5 MARKING TRANSISTOR
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MG400H1UL1
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Whe-eling Diode . High DC Current Gain : hFE=80 Min. (IC=400A) . Low Saturation Voltage
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MG400H1UL1
00A/iis
MG400H1UL1
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MG200H1FL1A
Abstract: No abstract text available
Text: MG200H1FL1A GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE — HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Collector is Isolated from Case. • With Built-in Free Wheeling Diodes. • High DC Current Gain : hpp=80 Min. (IC=200A) • Low Saturation Voltage: VcE(sat)“2V(Max.)
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MG200H1FL1A
MG200H1FL1A
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MG400H1FK1
Abstract: LF400A
Text: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage
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MG400H1FK1
TjSl85'
MG400H1FK1
LF400A
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MG300M1UK2
Abstract: No abstract text available
Text: MG300M1UK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain: hpj?=80 Min. (Ic=300A) . Low Saturation Voltage
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MG300M1UK2
300M1UK2
MG300M1UK2
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MG400H1FL1
Abstract: transistor CD 910 ga3n
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1FL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M 6 . . . . The Collector Is Isolated from Case. With Built-in Free Wheeling Diode High DC Current Gain : hyE=80 Min. (Ic =400A)
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MG400H1FL1
00A/ys
MG400H1FL1
transistor CD 910
ga3n
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MG300M1UK1
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG300M1UK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain: hFE= 100 Min. (Ic=300A) . Low Saturation Voltage
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MG300M1UK1
MG300M1UK1
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