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    MJ300 Search Results

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    MJ300 Price and Stock

    STMicroelectronics MJ3001

    TRANS NPN DARL 80V 10A TO3
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    DigiKey MJ3001 Bulk
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    Intel Corporation PLMJ3000-44

    PROG ADAPTER FOR 3000A
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    DigiKey PLMJ3000-44 Box 1
    • 1 $500
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    Skyworks Solutions Inc 550MJ300M000DG

    XTAL OSC VCXO 300.0000MHZ LVPECL
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    DigiKey 550MJ300M000DG 50
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    Mouser Electronics 550MJ300M000DG
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    Richardson RFPD 550MJ300M000DG 1
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    Skyworks Solutions Inc 550MJ300M000DGR

    XTAL OSC VCXO 300.0000MHZ LVPECL
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    DigiKey 550MJ300M000DGR Reel 250
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    Mouser Electronics 550MJ300M000DGR
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    Richardson RFPD 550MJ300M000DGR 1
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    Sullins Connector Solutions SMJ300-T88N-DS-01

    CONN MOD JACK 8P8C VERT SHIELDED
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    DigiKey SMJ300-T88N-DS-01 Tray
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    MJ300 Datasheets (59)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MJ300 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ3000 Central Semiconductor Power Transistors Original PDF
    MJ3000 Comset Semiconductors Silicon Epitaxial Base Darlington - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF
    MJ3000 Motorola 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF
    MJ3000 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF
    MJ3000 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    MJ3000 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
    MJ3000 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    MJ3000 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ3000 Motorola The European Selection Data Book 1976 Scan PDF
    MJ3000 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ3000 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ3000 Motorola European Master Selection Guide 1986 Scan PDF
    MJ3000 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJ3000 Unknown Transistor Replacements Scan PDF
    MJ3000 Unknown Transistor Replacements Scan PDF
    MJ3000 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ3000 Unknown Transistor Replacements Scan PDF
    MJ3000 Unknown Cross Reference Datasheet Scan PDF
    MJ3000 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    MJ300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ3000

    Abstract: No abstract text available
    Text: MJ3000 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ3000 O204AA) 31-Jul-02 MJ3000

    MJ3001

    Abstract: MJ3000 MJ2501 transistor mj3001 MJ2500 MJ3001 equivalent MJ3000/MJ3001
    Text: MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN SILICON EPITAXIAL-BASE DARLINGTON The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications.


    Original     		PDF MJ2500 MJ2501 MJ3000 MJ3001 MJ2500, MJ2500 MJ3000 transistor mj3001 MJ3001 equivalent MJ3000/MJ3001

    mj3001

    Abstract: mj2501 MJ3000 AIN60
    Text: MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are


    Original     		PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ3000 AIN60

    h 033

    Abstract: MJ300-02A LB-030
    Text: Mounting Pad Packing Magazine Name MJ300-02A LB-030 26 pin SOJ 300 mil 14 1 13 F E G U J C 26 D B I H P T Q K M N M NOTE ITEM Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. B MILLIMETERS


    Original     		PDF MJ300-02A LB-030 S26LA-300A-1 SC-632-A* h 033 MJ300-02A LB-030

    h 033

    Abstract: 0-12 MJ300-02A D14C
    Text: Mounting Pad Packing Magazine Name MJ300-02A LB-030 26 pin SOJ 300 mil 14 1 13 C 26 F D B I H G U J E M N T P Q K M NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS


    Original     		PDF MJ300-02A LB-030 P26LA-50A-2 SC-632-A* h 033 0-12 MJ300-02A D14C

    Untitled

    Abstract: No abstract text available
    Text: MJ3001 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)400uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k


    Original     		PDF MJ3001

    Untitled

    Abstract: No abstract text available
    Text: MJ300A2F55 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)550ö V(BR)CBO (V) I(C) Max. (A)300 Absolute Max. Power Diss. (W)1400 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.80 @I(C) (A) (Test Condition)300


    Original     		PDF MJ300A2F55 Code5-10 NumberTR00500010

    mj3001

    Abstract: No abstract text available
    Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u


    Original     		PDF MJ2501 MJ3001 MJ3001. mj3001

    MJ3001

    Abstract: transistor mj3001 mj2501 MJ3001 equivalent SGS-Thomson
    Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power


    Original     		PDF MJ2501 MJ3001 MJ2501 MJ3001. MJ3001 transistor mj3001 MJ3001 equivalent SGS-Thomson

    MJ300-02A

    Abstract: No abstract text available
    Text: 5.7 UNIT : mm 10.4 MJ300-02A, LB-030 length : 461±2.0 thickness : 0.6 +0.3 −0.2 tolerance : ±0.4 material : plastic with antistatic finish Applied Package 26-pin Plastic SOJ (300 mil) Quantity (pcs) MAX. 25


    Original     		PDF MJ300-02A, LB-030 26-pin MJ300-02A

    transistor mj3001

    Abstract: MJ2501 MJ3001
    Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES • ■ APPLICATION AUDIO POWER AMPLIFIER ■ DC-AC CONVERTER ■ EASY DRIVER FOR LOW VOLTAGE DC MOTOR ■ GENERAL POWER SWITCHING


    Original     		PDF MJ2501 MJ3001 MJ2501 MJ3001. transistor mj3001 MJ3001

    transistor MJ2501

    Abstract: transistor mj3001 MJ2501 MJ3001
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION •Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 1000 Min @ IC = -5A ·Collector-Emitter Breakdown VoltageV(BR)CEO= -80V(Min) ·Complement to type MJ3001


    Original     		PDF MJ3001 -100mA; -20mA -50mA transistor MJ2501 transistor mj3001 MJ2501 MJ3001

    MJ3001

    Abstract: MJ2501
    Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power


    Original     		PDF MJ2501 MJ3001 MJ2501 MJ3001. MJ3001

    MJ3001

    Abstract: MJ2501 MJ3001 equivalent Premier Devices transistor mj3001 npn power darlington to-3 150w
    Text: MJ2501 & MJ3001 10A, 150W, 80V Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 Typical at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors.


    Original     		PDF MJ2501 MJ3001 MJ2501 MJ3001 MJ3001 equivalent Premier Devices transistor mj3001 npn power darlington to-3 150w

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)


    OCR Scan     		PDF 5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD 37E D Û1331Ô7 DGGGDbO 1 • SMLB m ‘ Î'rîwî. Type No. Reliability Polarity Option MJ900 MJ901 MJ2500 MJ2501 MJ2955 SCREEN SCREEN SCREEN SCREEN CECC PNP PNP PNP PNP PNP MJ3000 MJ3001 MJ3201 HJ3202 MJ3238 SCREEN SCREEN HX-REL HI-REL HI-REL


    OCR Scan     		PDF MJ900 MJ901 MJ2500 MJ2501 MJ2955 MJ3000 MJ3001 MJ3201 HJ3202 MJ3238

    motorola MJ3000

    Abstract: transistor MJ2501 MJ3000 circuit mj2501 mj3000 MJ3001 transistor mj3001
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ‘"W M f a y f lf t w a n g o g s M aKM SA •M -H H ttM A ) Medium-Power Complementary Silicon Transistors PNP MJ2500 MJ2501* NPN MJ3000 MJ3001* . . . for use as output devices in complementary general purpose amplifier applica­


    OCR Scan     		PDF MJ2500 MJ2501* MJ3000 MJ3001* MJ3000 MJ2501 motorola MJ3000 transistor MJ2501 MJ3000 circuit MJ3001 transistor mj3001

    Untitled

    Abstract: No abstract text available
    Text: rz 7 SCS-THOM SON MJ2501 i*! i[LI ¥[M0 gS MJ3001 COMPLEMENTARY SIUCOnTto W ^ TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3


    OCR Scan     		PDF MJ2501 MJ3001 MJ2501 MJ3001.

    transistor mj3001

    Abstract: j3000 MJ3001 transistor MJ2501 MJ2500 MJ2501 AN-415 J2500 J2501 MJ3000
    Text: MJ2500, MJ2501, MJ3000, MJ3001 continued E L E C T R IC A L C H A R A C T E R IS T IC S (Tc = 2S°C unless otherwise noted)_ _ _ | Characteristic | Symbol | M in | M ix I O F F C H A R A C T E R IS T IC S


    OCR Scan     		PDF MJ2500, MJ2501, MJ3000, MJ3001 J3000 J2501. MJ3001 J2500, MJ3000 transistor mj3001 transistor MJ2501 MJ2500 MJ2501 AN-415 J2500 J2501

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON MJ2501 MJ3001 RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3


    OCR Scan     		PDF MJ2501 MJ3001 MJ2501 MJ3001. P003F

    MJ300

    Abstract: mj300av100 equivalent of transistor D 2331 diode l 0607 ip rating 4221 motorola transistor diode l 0607 max4283 SC3662 MJ300A
    Text: 6367254 MOTOROLA SC MOTOROLA Tb XSTRS/R F 9 6D 8 1 5 1 5 D 7 '3 3 ~ 3 £ Order this data sheet by MJ300AV100/D DE | ti317ES4 ODfllSlS 5 SEMICONDUCTOR TECHNICAL DATA MJ300 AV 100 NPN S ilic o n P o w e r T ra n s is to r M odule Energy M anagem ent Series


    OCR Scan     		PDF MJ300AV100/D 317ES4 MJ300 MK145BP, MJ300AV100 mj300av100 equivalent of transistor D 2331 diode l 0607 ip rating 4221 motorola transistor diode l 0607 max4283 SC3662 MJ300A

    transistor mj3001

    Abstract: TRANSISTOR 2SC 635 MJ3000 MJ3000 circuit MJ2501 MJ3001 J3000 j-2500 MJ2500 AN-415
    Text: MJ2500, MJ2501 PNP SILICON MJ3000, MJ3001 NPN 10 A M PERE D A R L IN G T O N POWER T R A N SIST O R S C O M PLEM EN T A R Y SILIC O N MEDIUM-POW ER C O M PLEM EN TA R Y SILIC O N T R A N SIST O R S . 6 0 -8 0 V O L T S 150 W A T T S for use as o u tp u t devices in co m ple m e n tary general purpose


    OCR Scan     		PDF MJ2500, MJ2501 MJ3000, MJ3001 MJ2500 MJ3000 -MJ2501 transistor mj3001 TRANSISTOR 2SC 635 MJ3000 circuit J3000 j-2500 AN-415

    MOTOROLA mj300av120

    Abstract: MJ300AV120 FLU1-60 max4283 equivalent of transistor D 2331 4221 motorola transistor
    Text: 63.67254 M O T O R O L A SC XSTRS/R F lyiQYOROLA ST 89D 80000 D E | b3ki7254 DDflDODO Order this data sheet by MJ300AV120/D D | • SEMICONDUCTOR TECHNICAL DATA MJ300AV120 NPN Silico n Pow er Transistor Module Energy Management Series DU AL TR I-STA G E


    OCR Scan     		PDF MJ300AV120/D b3ki7254 MJ300AV120 MK145BP, MOTOROLA mj300av120 MJ300AV120 FLU1-60 max4283 equivalent of transistor D 2331 4221 motorola transistor

    MJ3001

    Abstract: mj3000
    Text: SGS-THOMSON MJ2500/MJ2501 MJ3000/MJ3001 ÜLieTOOffäDOl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are


    OCR Scan     		PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ2501 MJ3000 mj3000