RL28-55
Abstract: C110 H160 transistor C110
Text: RL28-55/82b/105/. Reflection light beam switch with polarisation filter RL28-55/82b/105/. with 5-pin, M12 x 1 plastic connector U K Detection range up to 16 m K PNP and NPN transistor outputs K Clearly visible LEDs for Power ON, switching state and stability control
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RL28-55/82b/105/.
RL28-55
C110
H160
transistor C110
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transistor 3569
Abstract: 3569 pN3569
Text: M NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit ching applications for collector current up to 500mA. MECHANICAL OUTLINE
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500mA.
O-92A
Vcb-40V
Ta-75Â
150mA
IB-15mA
Ic-150Â
BOXfc9477
VCE-10V
transistor 3569
3569
pN3569
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Untitled
Abstract: No abstract text available
Text: M PN 3569 NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit ching applications for collector current up to 500mA. MECHANICAL OUTLINE
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500mA.
O-92A
150mA
15fflA
f-20Mc
300uS,
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sg transistor
Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor"
Text: TrìQuint SEMICONDUCTOR TGF2021-08-SG 7 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The T riQ uint TG F2021-08-SG is a discrete 7 W a tt P1dB Transistor operating at 12 volts. The device produces 7W P1dB RF output power at 4GHz. Both defense and com m ercial m arkets can take advantage
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TGF2021-08-SG
20MHz
TGF2021-08-SG
TGF2021-08-SG.
sg transistor
rf transistor 320C
TGF2021
4ghz transistor n
"rf transistor"
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2SJ328
Abstract: 2SJ328-Z MEI-1202 TEA-1035
Text: DATA SHEET NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR iB— r 2SJ328, 2SJ328-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ328 is P-channel MOS Field Effect Transistor designed in m illim e te rs for solenoid, m otor and lamp driver.
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2SJ328,
2SJ328-Z
2SJ328
IEI-1209)
2SJ328-Z
MEI-1202
TEA-1035
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pdmi
Abstract: 2SK2838 2SK283
Text: TOSHIBA 2SK2838 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2838 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in m m TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 10.3MAX. APPLICATIONS
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2SK2838
O-22QFL
pdmi
2SK2838
2SK283
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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BUK437-450B
Abstract: T-39-15
Text: N AMER 5SE PHILIPS/DISCRETE D •I fa b S B T a i 0050B 1S M PowerMOS transistor BUK437-450B T -3 ^ -1 5 * GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK437-450B
OT-93;
BUK437-450B
T-39-15
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F1220M
Abstract: No abstract text available
Text: TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW Y Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise applications such as pream plifiers, m ix ers and oscillators in analog and digital T V -s y s te m s
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TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW
1220R
20-Jan-99
F1220M
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724 motorola NPN Transistor
Abstract: motorola transistor r 724 MRF2010M motorola rf Power Transistor transistor amplifier 3 ghz 10 watts MRF201 MOTOROLA POWER TRANSISTOR 14 DS5802 Motorola 406 MRF2010
Text: Order this document by MRF2010M/D M MOTOROLA MRF2010M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 The RF Line 10W M ICRO W AVE POWER TRANSISTO R NPN SILICON MICROWAVE POWER TRANSISTOR . . . designed for Class B and C comm on base broadband amplifier
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MRF2010M/D
MRF2010M
MRF2010M/D
724 motorola NPN Transistor
motorola transistor r 724
MRF2010M
motorola rf Power Transistor
transistor amplifier 3 ghz 10 watts
MRF201
MOTOROLA POWER TRANSISTOR 14
DS5802
Motorola 406
MRF2010
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DIODE SJ 98
Abstract: BUK437-450B
Text: N AMER P H I L I P S / D I S C R E T E 5SE D •I fabSBTai 0050B1S M PowerMOS transistor B U K 437-450B T -3^ -15* GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK437-450B
OT-93;
DIODE SJ 98
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IC 4093 pin configuration
Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Text: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221
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O-236
IC 4093 pin configuration
BRY 56 B
IC 4093
MARKING 30 5Y
SO2894
4392
4392 a ic
BCV27
BFR30
BFR31
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NTM3906
Abstract: No abstract text available
Text: SILICON TRANSISTOR NTM3906 GENERAL PU R PO SE SW ITCH IN G AND A M PLIFIER PNP SILICO N EPITA X IA L TR A N SISTO R MINI MOLD D E S C R IP T IO N T he N T M 3 9 0 6 is designed for general purpose switching and amplifier application, especially H yb rid Integrated Circuit.
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NTM3906
NTM3906
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transistor 21Y
Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
Text: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements
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/331A
MIL-S-19500/
2N1553A
2N1556A
2N1554A
2N1555A
2N1556A
transistor 21Y
2N1556
TRANSISTOR 3052
2N1555
J717
2N1553
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MMBF5486LT1
Abstract: 318C8 marking gfg 6f
Text: MOTOROLA Order this document by MMBF5486LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE MMBF5486LT1 M o to ro la P re fe rre d D e vic e MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol
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MMBF5486LT1/D
MMBF5486LT1
OT-23
O-236AB)
MMBF5486LT1
318C8
marking gfg 6f
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DBT134
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this
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MRF20030R/D
DBT134
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - MARCH 94_ FEATURES * 350 V o lt V CE0 * Gain of 15 at lc=100mA E E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS. P A R A M ETER SYM BO L Collector-Base Voltage Continuous Collector Current
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100mA
cH7Q57Ã
001G35S
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3SK126
Abstract: No abstract text available
Text: TOSHIBA 3SK126 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 26 Unit in mm TV TUNER, VHF RF AM PLIFIER APPLICATIONS TV TUNER VHF M IXER APPLICATIONS • • • + 0.2 Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.03pF Typ.
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3SK126
450MHz
50MHz
3SK126
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A1S sh
Abstract: No abstract text available
Text: T O SH IB A 3SK126 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 26 U nit in mm TV TUNER, VHF RF AM PLIFIER APPLICATIONS TV TUNER VHF M IXER APPLICATIONS + 0.2 2.9 -0.3 - H Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.03pF Typ.
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3SK126
A1S sh
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SL3145CMP
Abstract: No abstract text available
Text: GEC PLESSEY w . S r M I O ADVANCE INFORMATION N D li C T O K S SL3145 1.6GHz NPN TRANSISTOR ARRAYS The SL3145 ¡s a monolithic array of five high frequency low current NPN transistors. The SL3145 consists of 3 isolated transistors and adifferential pair in a 14 lead SO package The
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SL3145
SL3145
CA3046.
SL314S
200MHz)
SL3145CMP
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2N3823 equivalent
Abstract: 2N3823 transistor 2N3823
Text: 2N3S23 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR f*r ' * 1 ▼T,”‘ '* V ^ •.,v . M i " : ' V j .*< V - v ’ ' * V r * \¿ ; ’?T * r * ' *-•- '• i, ':* ' u f T • *'•* «íí • ” ’ V , 2* * ‘ r " tì'1 « * CASE TO-72 THE 2N3825 IS AN N-CHANNEL JFET DESIGNED
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2N3823
450MHz.
300mW
BO9477
200MHz
VDS-15V
f-200MHz
f-200MHz
100MHz
2N3823 equivalent
transistor 2N3823
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M 015 j47
Abstract: Diode FAJ 32
Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M R F20060R M RF20060RS The M R F 20 06 0R and M R F 20 06 0R S are desig ned fo r b roadband com m e rcial and industrial ap plicatio ns at fre q u e n cie s from 1800 to 2 0 00 M Hz. T he high gain,
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MRF20060R/D
M 015 j47
Diode FAJ 32
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