sot marking code ZS
Abstract: Q62702-F1124
Text: BF 770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 770A SOT-23 LSs Q62702-F1124
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OT-23
Q62702-F1124
S21/S12|
Dec-12-1996
sot marking code ZS
Q62702-F1124
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Untitled
Abstract: No abstract text available
Text: BF770A NPN Silicon RF Transistor 3 For IF amplifiers in TV-sat tuners and for VCR modulators 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF770A LSs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BF770A
VPS05161
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MARKING CODE 21E SOT23
Abstract: No abstract text available
Text: BF770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators 2 3 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF770A Marking LSs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings
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BF770A
MARKING CODE 21E SOT23
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BUK541
Abstract: BUK541-100A BUK541-100B
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK541-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK541-100A/B
BUK541
-100B
-SOT186
OT186;
BUK541-100A
BUK541-100B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level FET_, GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor In a plastic envelope suitable for surface mount
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BUK583-60A
OT223
BUK583-60A
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TRANSISTOR FS 10 TM
Abstract: TRANSISTOR b100
Text: Philips Semiconductors Product specification PowerMOS transistor BUK563-100A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface
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BUK563-100A
BUK563-100A
TRANSISTOR FS 10 TM
TRANSISTOR b100
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S10080
Abstract: TJT-120
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK556-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK556-60H
T0220AB
BUK556-60H
S10080
TJT-120
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transistor yd 317
Abstract: t 317 transistor BUK454-400B
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK454-400B
T0220AB
transistor yd 317
t 317 transistor
BUK454-400B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK453-100A/B
BUK453
-100A
-100B
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable tor surface mount applications. The device is intended for use in automotive and general purpose
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BUK481-100A
OT223
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KDS 5J
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK466-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK466-60A
SQT404
KDS 5J
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transistor bu
Abstract: K444
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK444-800A/B
BUK444
-800A
-800B
-SOT186
transistor bu
K444
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION PINNING - SOT404 QUICK REFERENCE DATA SYMBOL PARAMETER w o > N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface
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OT404
BUK9656-30
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Untitled
Abstract: No abstract text available
Text: N AMFR PHILIPS/DISCRETE b'lE D • bbS3^31 0030775 0^1 * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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O220AB
BUK551-100A/B
BUK551
bb53T31
BUK551
-100A/E5
Q3D77c
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bR E » bb53R31 0030625 4M7 « A P X Preliminary Specification Philips Semiconductors BUK556-60H PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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bb53R31
BUK556-60H
O220AB
bbS3T31
QD30fl2fl
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BUK417-500AE
Abstract: BUK417-500B 500ae BUK417-500BE BUK417
Text: bTE D N AMER P HI LI PS/ DIS CRE TE • bbSBRBl GD3DMS0 T7R * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor ¡n ISOTOP envelope. The device is intended for use in
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BUK417-500AE/BE
OT227B
BUK417
-500AE
-500BE
BUK417-500AE
BUK417-500AE
BUK417-500B
500ae
BUK417-500BE
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PJ 0349
Abstract: PJ 2399 0709s
Text: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA
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AT-41532
SC-70
OT-323)
OT-323
SC-70)
1-800-Z35-031Z
5965-6167E
PJ 0349
PJ 2399
0709s
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BUK428-500B
Abstract: BUK428
Text: Ph ilips C o m p o n e n ts Data sheet status Product specification date of issue March 1991 BUK428-500B PowerMOS transistor GENERAL DESCRIPTION tsl-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope. The devicç is intended fo r use in
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BUK428-500B
7110fl2ti
-SOT199
BUK428-500B
BUK428
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BUK454-500B
Abstract: BUK454-500A T0220AB K45450 tb 10 n 6
Text: bbSBTai QQ2DM7G SSE D N AMER P H I L I P S / D I S C R E T E S BUK454-500A BUK454-500B PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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OCR Scan
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BUK454-500A
BUK454-500B
BUK454
-500A
-500B
T-39-11
T0220AB
K45450
tb 10 n 6
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2SK508
Abstract: 076z marking K52 Vus-50V
Text: NEC Junction Field Effect Transistor 2SK508 N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier # */FEA TU RES I PACKAGE DIMENSIONS U n it . mm n y fs|2 (gn.2) ~26 mS T Y P . ( V d s - 5.0 V, V GS-0 , f = 1.0 kHz) 2 . 8 ± 0.2 o1fl.Ci„ r l ' 0
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2SK508
O--00
2SK508
076z
marking K52
Vus-50V
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transistor 5BM
Abstract: BUK443 BUK443-60A BUK443-60B
Text: N AMER PHIL IPS /DISCRETE bTE D m ^^ 53^31 0 D 3 D5 1 S ÔS 5 H A P X Philips Sem iconductors Product Specification PowerMCS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuil-pack envelope. The device is Intended for use In
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0D3D51S
BUK443-60A/B
PINNING-SOT186
BUK443
transistor 5BM
BUK443-60A
BUK443-60B
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Untitled
Abstract: No abstract text available
Text: im VOLTAGE REGULATOR WITH EXTERNAL POWER TRANSISTOR m R N 5 R G S E R IE S IOUTLINE The RN5RG Series are voltage regulator ICs with an external power transistor with high output voltage accu racy and lowest supply current by CMOS process. Each of these voltage regulator ICs consists of a voltage refer
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OT-23-5
QQ02bMD
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Q62702-F1124 1= B Package LU It CM h Ordering Code LSs :o
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Q62702-F1124
OT-23
fl535b05
Q1S17GM
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