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    TRANSISTOR LJ Search Results

    TRANSISTOR LJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR LJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    RN1112FS

    Abstract: RN1113FS RN2112FS RN2113FS
    Text: RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN1112FS RN1113FS RN1112FS, RN2112FS, RN2113FS RN1113FS RN2112FS RN2113FS

    CMBT2369

    Abstract: np TRANSISTOR smd SOT23
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBT2369 C-120 CMBT2369 np TRANSISTOR smd SOT23

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Mark ing CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT2369 C-120

    np TRANSISTOR smd SOT23

    Abstract: smd transistor marking np CMBT2369
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT2369 C-120 np TRANSISTOR smd SOT23 smd transistor marking np CMBT2369

    Untitled

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3441 3 AMPERES NPN SILICON POWER TRANSISTOR NPN SILICON POWER TRANSISTOR . . . 2N3441 transistor is designed for use in general-purpose switching


    Original     		PDF 2N3441 2N3441

    BLV36

    Abstract: No abstract text available
    Text: L/^ioaucti, LJnc. 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U'SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV36 VHP LINEAR PUSH-PULL POWER TRANSISTOR Two NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier.


    Original     		PDF BLV36 100mA BLV36

    Untitled

    Abstract: No abstract text available
    Text: RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112CT, RN1113CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02


    Original     		PDF RN1112CT RN1113CT RN1112CT, RN2112CT, RN2113CT

    Untitled

    Abstract: No abstract text available
    Text: RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112CT,RN1113CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Unit: mm


    Original     		PDF RN1112CT RN1113CT RN2112CT, RN2113CT

    Untitled

    Abstract: No abstract text available
    Text: RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112CT,RN1113CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02 ３


    Original     		PDF RN1112CT RN1113CT RN2112CT, RN2113CT

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    transistor st

    Abstract: No abstract text available
    Text: & MOTOROLA CA3146 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The CA3146 is designed for general purpose, low power applications in the dc through VHF range. SEMICONDUCTOR


    OCR Scan     		PDF CA3146 CA3146 transistor st

    IBZ MARKING CODE

    Abstract: No abstract text available
    Text: MMBT3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor MMBT3906 is recommended. •t lo, Top View "1 Pin configuration 1 = Collector, 2 = Base, 3 = Emitter, Marking code 1N LjA—i—


    OCR Scan     		PDF MMBT3904 MMBT3906 OT-23 IBZ MARKING CODE

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    BF115

    Abstract: BF 145 transistor transistor bf 175 transistor bf 910 transistor 115 thomson tuners C22E transistor CD 910 oscillateur V12EC
    Text: BF 115 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L The NPN plan epitaxial transistor BF 115 is intended for use in front-end and oscillatormixer stages of FM tuners and generally for all HF uses. Le transistor NPN " plan é p ita xia l" BF 115 est desti­


    OCR Scan     		PDF -c12e -V12eCC) ----C22e BF115 BF 145 transistor transistor bf 175 transistor bf 910 transistor 115 thomson tuners C22E transistor CD 910 oscillateur V12EC

    bf314

    Abstract: No abstract text available
    Text: BF 314 NPN SILICON Ik lJ. PLANAR UBI HIGH FREQUENCY EPITAXIAL J TRANSISTOR m n mj»4 * ? j i MECHANICAL OUTLINE GENERAL DESCRIPTION ; The BF314 is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration.


    OCR Scan     		PDF BF314 O-92F 100MHz BOX69477 J0321

    sc5-S

    Abstract: RT1P144C RT1P144M RT1P144T2 RT1N144X RT1P144S RT1P144U ml021
    Text: Transistor RT1 P I 44X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION RT1P144X is a OUTLINE DRAWING one chip transistor R T iP i ^ C R T 1 P 144U with b u ilt-in bias resistor.NPN type is RT1NM4X UNIT: mm


    OCR Scan     		PDF HT1P144X RT1N144X 47kft) RT1P144TÃ RT1P144C RT1P144M O-236 sc5-S RT1P144C RT1P144M RT1P144T2 RT1N144X RT1P144S RT1P144U ml021

    transistor K52

    Abstract: germanium transistor pnp GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard germanium pnp germanium transistor mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS power ac audio transistor small signal transistor
    Text: EDISW A N MAZDA X C IO I AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE GEN ERAL The X C IO I is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element of the transistor is hermetically sealed in a small can.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor PHP3N20L Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high


    OCR Scan     		PDF PHP3N20L T0220AB

    Untitled

    Abstract: No abstract text available
    Text: OLE D N AMER PHILIPS/DISCRETE MAINTENANCE TYPE • bbS3T31 DDmT 31 LJE42002T T*- 3 3 - 0 S' MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-emitter class-A amplifiers up to 4 GHz.


    OCR Scan     		PDF bbS3T31 LJE42002T

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF BUK555-60A/B BUK555 T0220AB BUK555-60A/B

    transistor tt 2222

    Abstract: BLV20 TT 2222 RF POWER TRANSISTOR NPN vhf j0718 2222 123 capacitor philips ic TT 2222
    Text: PHILIPS INTERNATIONAL b5E J> m 711Gö5b CIQb2ü30 O^ä BLV20 V.H.F. PO W ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF BLV20 OT-123. 711002b 7z68947 7z68946 7z68948 transistor tt 2222 BLV20 TT 2222 RF POWER TRANSISTOR NPN vhf j0718 2222 123 capacitor philips ic TT 2222

    transistor 131 8D

    Abstract: transistor k 3728 QBE+61.2+dp2
    Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF BLY90 transistor 131 8D transistor k 3728 QBE+61.2+dp2