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    TRANSISTOR L33 Search Results

    TRANSISTOR L33 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR L33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLF888

    Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
    Text: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 BLF888 dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP

    Untitled

    Abstract: No abstract text available
    Text: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 BLF888

    Untitled

    Abstract: No abstract text available
    Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888

    blf888

    Abstract: L33 TRANSISTOR C4532X7R1E475MT020U Capacitor L33 470 dvb-t transmitters RF35 DVB-T transistor amplifier BLF888 nxp ez90
    Text: BLF888 UHF power LDMOS transistor Rev. 02 — 22 October 2009 Preliminary data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 BLF888 L33 TRANSISTOR C4532X7R1E475MT020U Capacitor L33 470 dvb-t transmitters RF35 DVB-T transistor amplifier BLF888 nxp ez90

    j3076

    Abstract: BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378
    Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 j3076 BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378

    TC-1654

    Abstract: L33 TRANSISTOR transistor L33 MEI-1202 MF-1134 FN1A4M npn l33
    Text: DATA SHEET SILICON TRANSISTOR FA1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters • Resistors Built-in TYPE 0.4+0.1 –0.05 2.8±0.2 C B 0.65+0.1 –0.15 1.5 • Complementary to FN1A4M


    Original     		PDF

    smd transistor l32

    Abstract: SMD EZ 648 001aan207 BLF0510H6600P
    Text: BLF0510H6600P Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF0510H6600P powe11 smd transistor l32 SMD EZ 648 001aan207 BLF0510H6600P

    smd transistor L33

    Abstract: SMD l33 Transistor transistor smd l33 BLF879P smd transistor l32 2663 transistor j337 IEC C20 dimension J17-15 J0582
    Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF879P 771-BLF879P112 BLF879P smd transistor L33 SMD l33 Transistor transistor smd l33 smd transistor l32 2663 transistor j337 IEC C20 dimension J17-15 J0582

    UT-090C-25

    Abstract: smd transistor l32 NXP amplifier EZ 711 253 J1072 ST EZ 711 253
    Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.


    Original     		PDF BLU6H0410L-600P; BLU6H0410LS-600P BLU6H0410L-600P 6H0410LS-600P UT-090C-25 smd transistor l32 NXP amplifier EZ 711 253 J1072 ST EZ 711 253

    SMD l33 Transistor

    Abstract: No abstract text available
    Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.


    Original     		PDF BLU6H0410L-600P; BLU6H0410LS-600P BLU6H0410L-600P 6H0410LS-600P SMD l33 Transistor

    Untitled

    Abstract: No abstract text available
    Text: BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev. 2 — 20 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF10H6600P; BLF10H6600PS BLF10H6600P

    Untitled

    Abstract: No abstract text available
    Text: BLF988; BLF988S Power LDMOS transistor Rev. 2 — 1 August 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF988; BLF988S BLF988

    smd transistor L33

    Abstract: dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor
    Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF879P smd transistor L33 dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor

    SMD EZ 648

    Abstract: smd transistor l32 smd transistor L33 smd transistor l31 J2151 J15-12
    Text: BLF988; BLF988S Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF988; BLF988S BLF988 SMD EZ 648 smd transistor l32 smd transistor L33 smd transistor l31 J2151 J15-12

    Untitled

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A

    Untitled

    Abstract: No abstract text available
    Text: BLF879P; BLF879PS UHF power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF879P; BLF879PS 200rs BLF879P

    smd transistor L33

    Abstract: UT-090C-25 BLF888A L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 1 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A smd transistor L33 UT-090C-25 L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU

    Untitled

    Abstract: No abstract text available
    Text: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 — 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF884P; BLF884PS BLF884P

    smd transistor L33

    Abstract: transistor smd l33 ttf 103 english SMD l32 Transistor SMD l33 Transistor 900 mhz av transmitter dvb-t2
    Text: BLF879P; BLF879PS UHF power LDMOS transistor Rev. 2 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF879P; BLF879PS BLF879P smd transistor L33 transistor smd l33 ttf 103 english SMD l32 Transistor SMD l33 Transistor 900 mhz av transmitter dvb-t2

    smd transistor l31

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A smd transistor l31

    Untitled

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS narrow15 BLF888A

    L33 TRANSISTOR

    Abstract: transistor L33 npn l33 l33 sot23 l33 thermal UBC370 DD44170 transistor KIN BF747 BF747W
    Text: NPN 1 GHz wideband transistor PH IL IP S INTERNATIONAL DESCRIPTION "/ ' SbE D • 3 i^ /^ 7 BF747W 71 1D ô E b G D 4 4 ‘17D L33 « P H I N PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer, oscillator and IF amplifier in UHF


    OCR Scan     		PDF BF747W 711DflEb DD44170 OT323 BF747W BF747. UBC370 OT323. L33 TRANSISTOR transistor L33 npn l33 l33 sot23 l33 thermal UBC370 transistor KIN BF747

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711