TRANSISTOR L2 Search Results

TRANSISTOR L2 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR L2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance	Original	BD239C BD240C. O-220	PDF
BD239C Abstract: BD240C JESD97 transistor marking 1a Text: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance	Original	BD239C BD240C. O-220 BD239C BD240C JESD97 transistor marking 1a	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
TP3400 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3400 The RF Line UHF Linear Power Transistor 'C = 400 mA UHF LINEAR TRANSISTOR NPN SILICON The TP3400 is a NPN transistor gold metallized for reliability. The transition frequency of 3 GHz make this transistor a high gain — high output	OCR Scan	TP3400 TP3400	PDF
germanium transistors PNP Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,	Original	IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR	PDF
EIA-556-A Abstract: sot-23 marking 9D transistor marking 9D NF 723 L2SA1365 marking A5F application of IC 723 EIA-556A H SOD723 Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor L2SA1235FLT1G DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. . 3 FEATURE ● Small collector to emitter saturation voltage.	Original	L2SA1235FLT1G L2SA1365FLT1G 195mm 150mm 10Reel/Inner 30KPCS/Inner 3000PCS/Reel 40KPCS/Inner OT-723 EIA-556-A sot-23 marking 9D transistor marking 9D NF 723 L2SA1365 marking A5F application of IC 723 EIA-556A H SOD723	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor L2SA1235FLT1G DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. . FEATURE 3 ● Small collector to emitter saturation voltage.	Original	L2SA1235FLT1G L2SA1365FLT1G OT-23	PDF
L2SA1365 Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365LT1G L2SA1365LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE sat . . FEATURE ● Small collector to emitter saturation voltage.	Original	L2SA1365 180MHz OT-23	PDF
EIA-556-A Abstract: transistor package SOT-723 L2SA1365 sot-23 marking 9D sot723 SOT-723 sot23 mark code AE sod-723 marking b marking 9D transistor 33039 Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365LT1G L2SA1365LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE sat . . FEATURE ● Small collector to emitter saturation voltage.	Original	L2SA1365 180MHz 195mm 150mm 10Reel/Inner 30KPCS/Inner 3000PCS/Reel 40KPCS/Inner EIA-556-A transistor package SOT-723 sot-23 marking 9D sot723 SOT-723 sot23 mark code AE sod-723 marking b marking 9D transistor 33039	PDF
BLV91 Abstract: ferroxcube 1988 mda406 MDA401 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in	Original	BLV91/SL OT-172D) BLV91 ferroxcube 1988 mda406 MDA401	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS	Original	BFS17A September1995 MSB003 R77/02/pp9	PDF
transistor tic 106 Abstract: Philips 2222-030 38109 heatsink catalogue BLV935 chip die npn transistor Text: Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has	OCR Scan	BLV935 OT273 OT273 OT273. 110fl2ti transistor tic 106 Philips 2222-030 38109 heatsink catalogue BLV935 chip die npn transistor	PDF
marking A5F Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. L2SA1235FLT1G S-L2SA1235FLT1G . FEATURE ● Small collector to emitter saturation voltage.	Original	L2SA1365FLT1G L2SA1235FLT1G S-L2SA1235FLT1G AEC-Q101 OT-23 marking A5F	PDF

BFS17A Abstract: MSB003 E2p transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage	Original	BFS17A September1995 MSB003 R77/02/pp9 BFS17A MSB003 E2p transistor	PDF
BY206 Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLW32 BY206 BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430	PDF
transistor 835 Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649 Text: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558	OCR Scan	BC327; BC327A; BC328 BC337; BC337A; BC338 BC546; BC547; BC548 BC556; transistor 835 Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649	PDF
capacitor 2200 uF Abstract: philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT82 UHF power transistor Product specification 1996 Feb 05 Philips Semiconductors Product specification UHF power transistor BLT82 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a	Original	BLT82 OT96-1 MAM227 capacitor 2200 uF philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6	PDF
BY206 Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLW34 BY206 C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ B U L216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE . HIGH RUGGEDNESS	OCR Scan	BUL216	PDF
transistor D 2578 Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting	Original	BLW90 SC08a transistor D 2578 BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook	PDF
Untitled Abstract: No abstract text available Text: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220	OCR Scan	MJE13007 MJE13007 T0-220	PDF
MDA337 Abstract: 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU60/12 UHF power transistor Product specification March 1986 Philips Semiconductors Product specification UHF power transistor BLU60/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope	Original	BLU60/12 OT-119 MDA337 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3	PDF
transistor case To 106 Abstract: BUT11A Transistor morocco 1300 Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION	Original	BUT11A BUT11A O-220 O-220 transistor case To 106 Transistor morocco 1300	PDF

TRANSISTOR L2 Search Results

TRANSISTOR L2 Result Highlights (5)

TRANSISTOR L2 Datasheets Context Search

Untitled

BD239C

oz960

TP3400

germanium transistors PNP

EIA-556-A

Untitled

L2SA1365

EIA-556-A

BLV91

la 4440 amplifier circuit diagram 300 watt

Untitled

transistor tic 106

marking A5F

BFS17A

BY206

transistor 835

capacitor 2200 uF

BY206

Untitled

transistor D 2578

Untitled

MDA337

transistor case To 106