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    TRANSISTOR KT 209 Search Results

    TRANSISTOR KT 209 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KT 209 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1623

    Abstract: FP303 ITR11096 SB05-05CP
    Text: Ordering number:ENN4657 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode FP303 DC-DC Converter Applications Package Dimensions unit:mm 2099A [FP303] 4.5 3.4 2.8 0.5 1.8 0.5 7 6 1.0 1.5 0.5 1.57 2.5 1.0 4.25max 0.5 • Composite type with NPN transistor and Schottoky


    Original     		PDF ENN4657 FP303 FP303] 25max FP303 2SD1623 SB05-05CP, ITR11096 SB05-05CP

    2SD1620

    Abstract: FP304 ITR11110 ITR11111 ITR11112 SB0703C
    Text: Ordering number:ENN4926 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode FP304 DC-DC Converter Package Dimensions unit:mm 2099A [FP304] 5 4 3 2 1 0.4 1:Base 2:Collector 3:Emitter 4:Cathode 5:Anode 6:Cathode 7:Collector 0.2min 1.5 0.5 1.57


    Original     		PDF ENN4926 FP304 FP304] 25max FP304 2SD1620 SB0703C, ITR11110 ITR11111 ITR11112 SB0703C

    2SD1620

    Abstract: FP304 ITR11110 ITR11111 ITR11112 SB0703C
    Text: Ordering number:ENN4926 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode FP304 DC-DC Converter Package Dimensions unit:mm 2099A [FP304] 5 4 3 2 1 0.3 0.4 1:Base 2:Collector 3:Emitter 4:Cathode 5:Anode 6:Cathode 7:Collector 0.2min 1.5 0.5 1.57


    Original     		PDF ENN4926 FP304 FP304] 25max FP304 2SD1620 SB0703C, ITR11110 ITR11111 ITR11112 SB0703C

    4336

    Abstract: 2SK303 FC13 koyo ENN4336
    Text: Ordering number:ENN4336 N-Channel Junction Silicon FET FC13 Low-Frequency General-Purpose Amp, Differential Amp, Analog Switch Applications Package Dimensions unit:mm 2095A [FC13] 0.4 6 0.16 4 0 to 0.1 1.6 2.8 • Composite type with 2 FETs contained in the CP


    Original     		PDF ENN4336 2SK303, 4336 2SK303 FC13 koyo ENN4336

    ITR110

    Abstract: 2SC4520 FP302 ITR11082 SB05-05CP 72301
    Text: Ordering number:ENN4726 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode FP302 DC-DC Converter Applications Package Dimensions unit:mm 2099A [FP302] 4.5 3.4 2.8 0.5 1.8 0.5 7 6 1.0 1.5 0.5 1.57 2.5 1.0 4.25max 0.5 • Composite type with NPN transistor and Schottoky


    Original     		PDF ENN4726 FP302 FP302] 25max FP302 2SC4520 SB05-05CP, ITR110 ITR11082 SB05-05CP 72301

    EN4494

    Abstract: 2SA1416 2SC3646 FP205 marking 205
    Text: Ordering number:EN4494 FP205 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. · The FP205 is composed of 2 chips, one being


    Original     		PDF EN4494 FP205 FP205 2SA1416 2SC3646, FP205] EN4494 2SC3646 marking 205

    2SB1122

    Abstract: 2SD1622 FP203 2SB1122 equivalent
    Text: Ordering number:EN4496 FP203 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuits Features Package Dimensions • Composite type with 2 transistors of PNP transistor and NPN transistor,facilitating high-density mounting. · The FP203 is formed with chips, being equivalent to


    Original     		PDF EN4496 FP203 FP203 2SB1122 2SD1622, FP203] 2SD1622 2SB1122 equivalent

    marking 212

    Abstract: 2SA1370 2SC3467 FP212 44974
    Text: Ordering number:EN4497 FP212 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Driver Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor, in one package, facilitating high-density mounting. · The FP212 is composed of 2 chips, one being


    Original     		PDF EN4497 FP212 FP212 2SA1370 2SC3467, FP212] marking 212 2SC3467 44974

    2097a

    Abstract: 2SB1123 2SD1623 FP204 EN4493 marking 204
    Text: Ordering number:EN4493 FP204 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. · The FP204 is composed of 2 chips, one being


    Original     		PDF EN4493 FP204 FP204 2SB1123 2SD1623, FP204] 2097a 2SD1623 EN4493 marking 204

    2097a

    Abstract: 2SA1728 2SC4519 FP206 marking 206
    Text: Ordering number:EN4778 FP206 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. · The FP206 is composed of 2 chips, one being


    Original     		PDF EN4778 FP206 FP206 2SA1728 2SC4519, FP206] 2097a 2SC4519 marking 206

    2SA1370

    Abstract: 2SC3467 FP212
    Text: Ordering number:EN4497 FP212 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Driver Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor, in one package, facilitating high-density mounting. · The FP212 is composed of 2 chips, one being


    Original     		PDF EN4497 FP212 FP212 2SA1370 2SC3467, FP212] 2SC3467

    BX-1457

    Abstract: k 1457 2SD1620 FP304 SB0703C
    Text: Ordering number:EN4926 FP304 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Features Package Dimensions • Complex type with an NPN transistor and a Schottoky barrier diode facilitating high-density mounting. · The FP304 is composed of 2 chips, one being


    Original     		PDF EN4926 FP304 FP304 2SD1620 SB0703C, FP304] BX-1457 k 1457 SB0703C

    2SC4520

    Abstract: FP302 SB05-05CP
    Text: Ordering number:EN4726 FP302 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with NPN transistor and Schottoky barrier diode facilitating high-density mounting.


    Original     		PDF EN4726 FP302 FP302 2SC4520 SB05-05CP, FP302] SB05-05CP

    FP302

    Abstract: 2SC4520 SB05-05CP
    Text: Ordering number:EN4726 FP302 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with NPN transistor and Schottoky barrier diode facilitating high-density mounting.


    Original     		PDF EN4726 FP302 FP302 2SC4520 SB05-05CP, FP302] SB05-05CP

    2SD1621

    Abstract: FP301 SB07-03C
    Text: Ordering number:EN4539 FP301 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2 devices NPN transistor and Schottoky barrier diode contained in one package,


    Original     		PDF EN4539 FP301 FP301 2SD1621 SB07-03C FP301]

    kd226

    Abstract: KD522B transistor c 6073 transistor KT 209 M transistor kt 801 KD226B KT805AM Diode KD 521 a transistor KT 209 4413.13-02
    Text: SERVICE-MITTEILUNGEN V E B RFT I N D U S T R I E V E R T R I E B ¡D j RUNDFUNK UND F E R N S E H E N raa/o te/ev/s/on | - Ausgabe 1968 M am 4-5 Seite 1 - 8 Mitteilung aus dem VEB RFT IV RuF Leipzig/S 1. Regenerierung von UKW-Tunern 1.1. Allgemeine Informationen


    OCR Scan     		PDF

    M5207L05

    Abstract: M5207L01/M5207L05
    Text: MITSUBISHI SOUND PROCESSOR ICs M5207L01 /M5207L05 LINEAR CONTROL DUAL VCA IC DESCRIPTION The M 5 2 0 7 L is a variable gm-type VCA Voltage Control Amplifier IC designed for linear controlled electronic volume control. The IC offers capability of controlling each channel


    OCR Scan     		PDF M5207L01 /M5207L05 M5207L01 M5207L05 M5207L05 M5207L01/M5207L05

    6P45S

    Abstract: 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N m m 1r a d i o - television QKTOBKR | 1 9 8 1 11 SEITE Mitteilung auf dem 7KB Fernsehgerätewerke "Friedr. Sögels" Staßfurt Servlcehi nwels zum SECAM - IS - Dekoder A 295 D» A 220 D


    OCR Scan     		PDF TGLIO395 III/I8/379 6P45S 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550

    MATRA

    Abstract: t4211 MCT12K MC10K
    Text: 4TE — MATRA D H H S Preliminary • SflböMSb GÜ0E3Ü4 43T ■ H M H S =T 7= iiiiK iiii l i T H January 1991 ASIC HI-REL DATA SHEET MC GATE ARRAY SERIES 0.8 MICRON SCMOS FEATURES SUPER CMOS TECHNOLOGY -1 nm DRAWN 2 METAL LAYERS FLEXIBLE I/O CONFIGURATION : INPUT,


    OCR Scan     		PDF

    Halbleiterbauelemente DDR

    Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
    Text: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der


    OCR Scan     		PDF

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


    OCR Scan     		PDF

    M5207L01

    Abstract: transistor M152 5207L05 5207L01 transistor KT 209 M MITSUBISHI GATE ARRAY m5241 M5207L MS207L01 M5207L05
    Text: MITSUBISHI SOUND PROCESSOR ICs M5207L01 /M5207L05 LINEAR CONTROL DUAL VCA IC DESCRIPTION The M 5207L is a variable gm-type VCA Voltage Control Am plifier IC designed fo r linear controlled electronic volume control. The IC o ffe rs capability o f controlling each channel


    OCR Scan     		PDF M5207L01 /M5207L05 5207L M5207L01 5207L05 transistor M152 5207L05 5207L01 transistor KT 209 M MITSUBISHI GATE ARRAY m5241 M5207L MS207L01 M5207L05

    SRB 012.028

    Abstract: granat 216 KD410A service-mitteilungen junost 603 SY360 keramische Werke Hermsdorf KT339A SES N 2405 sy 360
    Text: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERN SEH EN g M S 1r a d io - television 1 7 J 0 L I 1 9 8 <f Mitteilung aus dem VEB Stern-Radio Sonneberg Neue AM/FM-ZF-Filter in Heimempfändern Auf Grund technischer Weiterentwicklung und Qualität8verbessernder


    OCR Scan     		PDF OO-08 00-y0 neu105 225/PA SRB 012.028 granat 216 KD410A service-mitteilungen junost 603 SY360 keramische Werke Hermsdorf KT339A SES N 2405 sy 360

    transistor KT 209 M

    Abstract: No abstract text available
    Text: Preliminary IlM lI September 1989 OPEN ASIC DATA SHEET MC GATE ARRAY SERIES 0.8 MICRON SCMOS FEATURES . SUPER CM OS TECHNOLOGY -1 um DRAWN 2 METAL LAYERS . FLEXIBLE I/O CONFIGURATION : INPUT, OUTPUT, THREE-STATE, VCC & VSS . SILICON GATE 0.8 |im EFFECTIVE CHANNEL


    OCR Scan     		PDF