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    TRANSISTOR K55 Search Results

    TRANSISTOR K55 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sf 128 transistor

    Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
    Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.


    Original     		PDF SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47

    Untitled

    Abstract: No abstract text available
    Text: TK55A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK55A10J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 110nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)


    Original     		PDF TK55A10J1 110nC

    Untitled

    Abstract: No abstract text available
    Text: TK55D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK55D10J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 110nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)


    Original     		PDF TK55D10J1 110nC

    TK55A10J1

    Abstract: No abstract text available
    Text: TK55A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK55A10J1 Switching Regulator Applications Unit: mm • High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)


    Original     		PDF TK55A10J1 TK55A10J1

    TK55A10J1

    Abstract: No abstract text available
    Text: TK55A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK55A10J1 Switching Regulator Applications Unit: mm • High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)


    Original     		PDF TK55A10J1 TK55A10J1

    TK55A10J1

    Abstract: No abstract text available
    Text: TK55A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK55A10J1 Switching Regulator Applications Unit: mm • High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)


    Original     		PDF TK55A10J1 TK55A10J1

    Untitled

    Abstract: No abstract text available
    Text: TK55D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK55D10J1 Switching Regulator Applications Unit: mm • High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)


    Original     		PDF TK55D10J1

    Untitled

    Abstract: No abstract text available
    Text: TK55D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK55D10J1 Switching Regulator Applications Unit: mm • High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)


    Original     		PDF TK55D10J1

    transistor BC 567

    Abstract: transistor BC 568 5E55
    Text: AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5804E/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO5804E AO5804E/L AO5804E AO5804EL -AO5804EL SC-89-6 Volt56555E 5655E 3D6943 D91A3 transistor BC 567 transistor BC 568 5E55

    RTL 602 W

    Abstract: IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002
    Text: ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! "#$%#!&"'! $*+*,*-(,! ! ./012341! (567893:! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! (;<),!


    Original     		PDF I/08/4! 65134B 086C3 9E73B 518D9' I5134! M0934N 58D2BD RTL 602 W IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002

    intel 945 motherboard schematic diagram

    Abstract: intel 915 MOTHERBOARD pcb CIRCUIT diagram PC intel 945 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram 845 MOTHERBOARD display problems CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD pcb CIRCUIT diagram intel 915 motherboard schematic 945 MOTHERBOARD CIRCUIT diagram usb M38802m2
    Text: ORDER NO. CPD0111006C1 Personal Computer CF-07 This is the Service Manual for the following areas. M …for U.S.A. Model Number Reference The following models are numbered in accordance with the types of CPU and HDD etc. featured by product. Model No. CF-071 Z 2 ZY3 4


    Original     		PDF CPD0111006C1 CF-07 CF-071 intel 945 motherboard schematic diagram intel 915 MOTHERBOARD pcb CIRCUIT diagram PC intel 945 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram 845 MOTHERBOARD display problems CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD pcb CIRCUIT diagram intel 915 motherboard schematic 945 MOTHERBOARD CIRCUIT diagram usb M38802m2

    transistor k702

    Abstract: transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230
    Text: ORDER NO. CPD0603076C0 Notebook Computer CF-18 This is the Service Manual for the following areas. Z …for PCPE /CPE Model No. CF-18JHUZBZZ 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.


    Original     		PDF CPD0603076C0 CF-18 CF-18JHUZBZZ K1MN04B00073 K1KA07BA0014 C0EBH0000457 C1DB00001351 XP0431200L UNR9113J0L transistor k702 transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    d667 transistor

    Abstract: nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot
    Text: ORDER NO. CPD0304020C1 Notebook Computer CF-73 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model Number Reference The following models are numbered in accordance with the types of CPU, LCD and HDD etc. featured by product.


    Original     		PDF CPD0304020C1 CF-73 CF-731 SuC1707 C1709 C1712 C1713 C1711 R1701 R1700 d667 transistor nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot

    Transistor 51Y

    Abstract: 51y diode S20Q
    Text: Product Specification Philips Semiconductors BU K554-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF K554-200A/B BUK554 -200A -200B T0220AB BUK554-200A/B Transistor 51Y 51y diode S20Q

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    S10080

    Abstract: TJT-120
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK556-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK556-60H T0220AB BUK556-60H S10080 TJT-120

    k553 transistor

    Abstract: K553 K-553 BUK553-100A BUK553-100B T0220AB transistor t buk553
    Text: N AUER PHILIPS/DISCRETE b^E D • bbSa^l 003D7^S Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 003D7 K553-1OOA/B BUK553 -100B k553 transistor K553 K-553 BUK553-100A BUK553-100B T0220AB transistor t

    BUK551-60A

    Abstract: BUK551-60B T0220AB WY transistor
    Text: Philips Components D ata sheet status Preliminary specification d ate of issue March 1991 PowerMOS transistor Logic level FET 5 INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device Is intended for use in


    OCR Scan     		PDF T0220AB BUK551-60A/B 7110fl2b BUK551 T-39-11 711QflSb 00M4bfifl BUK551-60A BUK551-60B T0220AB WY transistor

    TRANSISTOR K555

    Abstract: BUK555-100A fet junction transistor BUK555-100B T0220AB K-5551
    Text: PHILIPS INTERNATIONAL hSE ]> M 711DflEb 0Db424b fl44 • P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power


    OCR Scan     		PDF 711QflSb K555-1OOA/B T0220AB BUKS55 -100A -100B Tj/C-150 -ID/100 TRANSISTOR K555 BUK555-100A fet junction transistor BUK555-100B K-5551

    BUK553-100A

    Abstract: T0220 PACKAGE buk553 BUK553-100B T0220AB
    Text: Philips Components BUK553-100A BUK553-100B PowerMOS transistor Logic Level FET SYMBOL PARAM ETER B U K553 II M AX. M AX. U N IT -1 0 0 A 10 0 13 75 175 0 .1 8 -1 0 0 B 10 0 12 75 175 0 .2 2 V A W •C n cn < Ptot L D ra in -s o u rc e v o ltag e D rain curren t D C


    OCR Scan     		PDF BUK553-100A BUK553-100B BUK553 -100B M89-1154/RC BUK553-100A T0220 PACKAGE buk553 BUK553-100B T0220AB

    12FM6

    Abstract: general electric
    Text: 12FM6 ET-T1588 Page 1 DUPLEX-DIODE TRIODE Pfoétfifr 110 TUBES FOR d e te c to r a n d a f - d r iv e r a p p lic a t io n s in AUTOMOBILE RECEIVERS DESCRIPTION A N D RATING The 12FM6 is a miniature, duplex-diode triode for use as a combined de­ tector, AVC rectifier, and transistor driver. The tube is specially designed to


    OCR Scan     		PDF ET-T1588 12FM6 12-volt K-556II-TD89-I 12FM6 K-556 I-TD89-2 general electric

    BUK551-60A

    Abstract: BUK551-60B T0220AB fet transistor ft
    Text: Philips Com ponents D ata sheet status Preliminary specification d ate of issue March 1991 5bE PINNING - T0220AB PIN m 7110fl2b GO MM b ö M 465 • PHIN SYMBOL PARAMETER MAX. MAX. V ds Id P« T. BUK551 Drain-source voltage Drain current DC Total power dissipation


    OCR Scan     		PDF BUK551-60A/B 7110fl2b T0220AB BUK551 T-39-11 711QflSb BUK551-60A BUK551-60B fet transistor ft

    Regulated Power Supply BLOCK DIAGRAM OPERATION

    Abstract: k55 transistor transistor K58 PS310 chopper transformer transistor k56 Regulated Power Supply BLOCK DIAGRAM circuit diagram for REGULATED POWER SUPPLY
    Text: PF667-02 SCI7680M Series Semicustom System Power Supply Array • System power supply circuit • Low voltage with the low current consumption • DESCRIPTION The SCI7680 system power supply 1Chas been developed based on the low-voitage and low-power CMOS silicon


    OCR Scan     		PDF PF667-02 SCI7680M SCI7680 20pin Regulated Power Supply BLOCK DIAGRAM OPERATION k55 transistor transistor K58 PS310 chopper transformer transistor k56 Regulated Power Supply BLOCK DIAGRAM circuit diagram for REGULATED POWER SUPPLY