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    Glenair Inc 100-003D781

    Spiral Wraps, Sleeves, Tubing & Conduit BRAIDING - BRAID CABLING EXTRUDING
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    Mouser Electronics 100-003D781
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    Newark 100-003D781 Bulk 910 1
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    SMC Corporation of America AF30-03D-7-40-A

    FILTER, AIRLINE, RC3/8, AF-A SERIES | SMC Corporation AF30-03D-7-40-A
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    RS AF30-03D-7-40-A Bulk 5 Weeks 1
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    SMC Corporation of America AF40-03D-7-20-A

    FILTER, AIRLINE, RC3/8, AF-A SERIES | SMC Corporation AF40-03D-7-20-A
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    RS AF40-03D-7-20-A Bulk 5 Weeks 1
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    SMC Corporation of America AF40-03D-7-40-A

    FILTER, AIRLINE, RC3/8, AF-A SERIES | SMC Corporation AF40-03D-7-40-A
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    RS AF40-03D-7-40-A Bulk 5 Weeks 1
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    SMC Corporation of America AF30-03D-7R-40-A

    FILTER, AIRLINE, RC3/8, AF-A SERIES | SMC Corporation AF30-03D-7R-40-A
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    RS AF30-03D-7R-40-A Bulk 5 Weeks 1
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    003D7 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MV1817 HEADQUARTERS OPERATIONS GEC PLESSEY SEMICONDUCTORS Cheney Manor, Swindon, Wiltshire United Kingdom SN2 2QW. Tel: 01793 518000 Fax: (01793) 518411 GEC PLESSEY SEMICONDUCTORS P.O. Box 660017 1500 Green Hills Road, Scotts Valley, California 95067–0017,


    Original
    PDF MV1817 MV1815 MV1817â

    HEX2000

    Abstract: tms320f2812 program example SPRU078 SPRU095 SPRU513 tms320f2812 spi TMS320F2812 code composer studio SPRC125 tms320f2812 cpu code composer studio TMS320F2812
    Text: Application Report SPRAAQ2 – October 2007 TMS320F281x Boot ROM Serial Flash Programming Jeff Stafford. ABSTRACT This application report describes the implementation of TI’s Flash application program


    Original
    PDF TMS320F281x HEX2000 tms320f2812 program example SPRU078 SPRU095 SPRU513 tms320f2812 spi TMS320F2812 code composer studio SPRC125 tms320f2812 cpu code composer studio TMS320F2812

    BUK481-100A

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'ìE D • 1^53^31 003D721 'ìlO M A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope suitable for surface mount applications.


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    PDF 3D721 BUK481-100A OT223 -ID/100 003072b BUK481 -100A OT223. BUK481-100A

    k553 transistor

    Abstract: K553 K-553 BUK553-100A BUK553-100B T0220AB transistor t buk553
    Text: N AUER PHILIPS/DISCRETE b^E D • bbSa^l 003D7^S Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF 003D7 K553-1OOA/B BUK553 -100B k553 transistor K553 K-553 BUK553-100A BUK553-100B T0220AB transistor t

    28F010

    Abstract: AM28F010 AMD 478 socket pinout
    Text: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption


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    PDF G030715 T-46-13-27 Am28F010 -32-Pin 32-Pin 100mA Am28F010-95C4JC Am28F010-95C3JC 28F010 AMD 478 socket pinout

    Untitled

    Abstract: No abstract text available
    Text: KS6034C CMOS ELECTRONICS INTRODUCTION KS6034C is a single chip CMOS LSI for data bank with clock, calculator and phone number memory functions. FUNCTION - 3 operating modes available : telephone mode, calculator mode, clock mode 1 Telephone mode • Stores up to 20 items (1 item : 7 characters for


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    PDF KS6034C KS6034C KS6034Câ

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHI LIP S/ DIS CR ETE bRE D • bbS3R31 0D30727 33R « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.


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    PDF bbS3R31 0D30727 OT223 BUK482-60A QD3D731 bb53T31 D03D732 OT223.

    Untitled

    Abstract: No abstract text available
    Text: Card Edge Connectors Board-to-Board, Wire-to-Board Catalog 82619 A ' f r i t ! 4 i '13 0 Revised 8-96 Crimp Snap Twin Leaf Connectors Product Facts • Crimp snap-in, solder eye­ let, .025 [0.64] square posted and right angle contacts on .100 [2.54], .125 [3.18] or .156 [3.96]


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    PDF G16-28

    BUK551-100A

    Abstract: BUK551-100B T0220AB
    Text: N AMFR P H I L I P S / D I S C R E T E bTE D • ^53^31 QQ3D77S QT1 ■ APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope.


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    PDF BUK551-100A/B T0220AB BUK551 -100A -100B BUK551-100A BUK551-100B

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY SI M ! PRELIMINARY INFORMATION O N D I NWK938 155 Mb/s ATM TWISTED PAIR PHY/PMD TRANSCEIVER DEVICE WITH CLOCK RECOVERY The NWK938 is a Physical Medium Dependent device designed to operate at 155 Mb/s over category 5 unshielded or shielded twisted pair cable using the ATM Forum


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    PDF NWK938 NWK938 52Mb/s 155Mb/s 37bfi522 28-LEAD 52-LEAD 37bfiS22 44-LEAD 37bfl522

    Untitled

    Abstract: No abstract text available
    Text: S i GEC PLESSEY SI Mit PRELIMINARY INFORMATION O N I> l M V 1 8 1 7 SINGLE CHIP TELETEXT DECODER FOR 625 LINE OPERATION The MV1817 Television Data Service, TDS, IC incorporates all the features of the MV1815 with identical registers, so that MV1815 register control is software


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    PDF MV1817 MV1815 MV1815. 37bfl QD20TDb MV1817 43-24ps 59-7ps 12-lps

    31325

    Abstract: 313136
    Text: AMP Catalog 82619 Card Edge Connectors Board-to-Board, Wire-to-Board Revised 8-96 Linear Z I F Connectors Product Facts Linear Z I F Connectors • M inim izes force needed to install and rem ove printed circuit boards ■ Availa ble in lever and bell crank styles


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    PDF 003073b 31325 313136

    Untitled

    Abstract: No abstract text available
    Text: M7E D • «E3Sb05 0D3Db70 □ »SIEG SAB 8088 SIEMENS AKTIENGESELLSCHAF 8-Bit Microprocessor “ Preliminary SAB 8088 5 MHz SAB 8088-2 8 MHz SAB 8088-1 • 8-bit data bus interface • 16-bit internal architecture • Direct addressing capability to 1 M byte o f m em ory


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    PDF 16-bit 14-word 235b05 003D7DÃ SAB8088 8088-P Q67120-C106 P-DIP-40)

    K545

    Abstract: No abstract text available
    Text: N AI1ER PHILIPS/DISCRETE b 'lE I> bb53R31 DD3D7bS 14E « A P X Product Specification Philips Semiconductors BU K545-1OOA/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


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    PDF bb53R31 K545-1OOA/B PINNING-SOT186 BUK545 003D7bS BUK545-100A/B K545

    Untitled

    Abstract: No abstract text available
    Text: Si GEC PLESSEY S L M \ C O I i; t. T O K ADVANCE INFORMATION i MV1817 SINGLE CHIP TELETEXT DECODER FOR 625 LINE OPERATION Supersedes version in April 1994 Consumer 1C Handbook, HB312 0 -2 .0 ) The MV1817 Television Data Service, TDS, IC incorporates all the features of the MV1815 with identical


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    PDF MV1817 HB312 MV1817 MV1815 MV1815. 12-1jjs 59-7ps 37bfi522 DD25325

    pal 003a

    Abstract: V1817 GEC 44 3A teletext sub-code SCS30 SCR30
    Text: S i GEC PLESSEY M V1817 SINGLE CHIP TELETEXT DECODER FOR 625 LINE OPERATION Supersedes version in April 1994 Consumer 1C Handbook, HB3120—2.0 T he M V1817 Television D ata Service, TD S, 1C incorporates all the features o1 th e M V1815 w ith identical


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    PDF V1817 HB3120-- V1817 V1815 MV1815. MV1817 pal 003a GEC 44 3A teletext sub-code SCS30 SCR30

    Untitled

    Abstract: No abstract text available
    Text: Or, Call Customer Service at 1-800-548-6132 USA Only DESCRIPTION The INA131 is a low cost, general purpose G = 100 instrumentation amplifier offering excellent accuracy. Its 3-op amp design and small size make it ideal for a wide range of applications. • LOW DRIFT: 0.25nV/°C max


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    PDF INA131 25nV/Â 110dB SOL-16 REF200 INA131. 17313hS

    Burr-Brown 4206

    Abstract: No abstract text available
    Text: For Immediate Assistance, Contact Your Local Salesperson BU RR-BROW N E PGA204 PGA205 3 Programmable Gain INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • DIGITALLY PROGRAMMABLE GAIN: PGA204: G=1, 10, 100, 1000V/V PGA205: G=1, 2, 4, 8V/V The PGA204 and PGA205 are low cost, general pur­


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    PDF PGA204 PGA205 PGA204: 000V/V PGA205: PGA204 PGA205 PGA204â PGA205â Burr-Brown 4206

    TDA 4706

    Abstract: qml-38535 CDFP2-F14 CQCC1-N20
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REVSTATUS OF SHEETS PMIC N/A REV SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD M IC R O C IR C U IT D R A W IN G THIS DRAWING IS AVAILABLE


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    PDF 5962-E218-97 TDA 4706 qml-38535 CDFP2-F14 CQCC1-N20

    D0307

    Abstract: marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS
    Text: □ 00 MIL SPECS • 0000125 0030751 fl ■ MILS MIL -S-19500/440A ER 10 June 1991 SUPERSEDING MIL -S-19500/440(ER) 17 November 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N5927, JANTX AND JANTXV This specification is approved for use by US Army Laboratory


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    PDF MIL-S-19500/440A MIL-S-19500/440( 2N5927, MIL-S-19500. 5961-A007) D0307 marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHIL IPS /DI SCRE TE bTE D m bbS3T31 DD3D7SD 711 W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode


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    PDF bbS3T31 BUK543-60A/B PINNING-SOT186 BUK543

    Untitled

    Abstract: No abstract text available
    Text: Or, Call Customer Service at 1-800-548-6132 USA Only • BUFFERED GUARD DRIVE PINS • LOW OFFSET VOLTAGE: 2mV max • HIGH COMMON-MODE REJECTION: 84dB (G = 10) • LOW QUIESCENT CURRENT: 1mA • INPUT OVER-VOLTAGE PROTECTION: +40V APPLICATIONS • LABORATORY INSTRUMENTATION


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    PDF INA116 16-pin SOL-16 INA116 17313bS 1307ab

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 DD3D7DD 1Tb BIAPX Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF bbS3T31 O220AB BUK457-400B

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • bb53T31 CI030745 3S4 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level FET_ _ GENERAL DESCRIPTION N -channel enhancem ent mode


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    PDF bb53T31 CI030745 BUK542-100A/B