2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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k446
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D bbSB'lBl DD3D580 b=i7 « A P X product Specification Philips semiconductors BU K446-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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DD3D580
K446-800A/B
OT186
BUK446
-800A
-800B
IE-02
BUK446-800A/B
bbS3T31
k446
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BUK442-100A
Abstract: BUK442-100B
Text: N AMER PHILIPS/DISCRETE □TE D • bbS3T31 0D3G510 273 * A P X Product Specification P hilip s S e m icon ducto rs BU K442-1OOA/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic full-pack envelope.
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K442-1OOA/B
EUK442
-100A
OT186
BUK442-100A
BUK442-100B
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BUK445-100A
Abstract: BUK445-100B 100-P BUK445
Text: b^E D N AMER P H I L I P S / D I S C R E T E • bb5 3 T3 1 Q 3 0 SSS B U K445-1OOA/B PowerMOS transistor N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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0Q30SSS
K445-1OOA/B
-SOT186
BUK445
BUK445-100A
BUK445-100B
100-P
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BUK446-800A
Abstract: BUK446 BUK446-800B
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK446-800A/B
BUK446
-800A
-800B
-SOT186
OT186;
BUK446-800A
BUK446-800B
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transistor bu
Abstract: K444
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK444-800A/B
BUK444
-800A
-800B
-SOT186
transistor bu
K444
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PDF
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K444
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK444-200A/B
BUK444
-200A
-200B
-SOT186
K444
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PDF
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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BUK441
Abstract: BUK441-60A BUK441-60B 3909
Text: T Ï2 & - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.
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PINNING-SOT186
BUK441-60A/B
711D0Eb
BUK441
711002b.
00MMSb3
BUK441-60A
BUK441-60B
3909
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE bTE D bb53T31 DQ3DSbD fiTT * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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bb53T31
OT186
K445-200A/B
BUK445
-200A
bbS3T31
00305fci4
BUK445-200A/B
1E-01
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sd 431 transistor
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in
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bb53T31
PINNING-SOT186
BUK445-100A/B
BUK445
-100A
-100B
K445-100A/B
IE-02
1E-03
1E-04
sd 431 transistor
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PDF
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sf 128 transistor
Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.
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SC73P2602
SC73P2602
SC73C16
sf 128 transistor
TRANSISTOR SF 128
Triode 8050
marking P53 transistor
ic marking k52
SC73P16
bd 8050 TRANSISTOR
part MARKING k48
marking k47
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PDF
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BUK445-100A
Abstract: BUK445-100B BT diode BUK445
Text: PHILIPS INT ERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched M ode Power Supplies
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BUK445-100A/B
-SOT186
BUK445-100A
BUK445-100B
BT diode
BUK445
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PDF
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BUK446
Abstract: BUK446-800B BUK446-800A DD305 k446
Text: N AMER P H ILIP S /D IS C R E TE b^E » bbS3^31 DDBOSflO b=n • APX product Specification Philips semiconductors BUK446-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
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BUK446-800A/B
-SOT186
BUK446
-800A
-800B
K446-800A/B
BUK446-800B
BUK446-800A
DD305
k446
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PDF
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BUK444-500A
Abstract: BUK444-500B transistor BUK444-500B BUK444
Text: N AMER PHI LI PS / DI SC R ET E ESE kfa53T31 0DSG37G D 1 BUK444-500A BUK444-500B PowerMOS transistor T - 3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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kfa53T31
0DSG37G
BUK444-500A
BUK444-500B
BUK444
-500A
-500B
BUK444-500B
transistor BUK444-500B
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PDF
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2SK520
Abstract: transistor k43 2SK520 K44 2SK425 k41 transistor transistor k42 transistor k41 2SK520 K43 marking k42 mwk41
Text: Junction Field Effect Transistor 2SK520 zt>nnitosikh^ > > * 9 N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier 2S 520U K n . - 7- m f f l ? 4 7 ° k M + * ~ i - < n R F T > - f m & £ v r - - n i 7' PACKAGE DIMENSIONS Unit : mm)
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tt2SK238,
2SK425#
2SK520
transistor k43
2SK520 K44
2SK425
k41 transistor
transistor k42
transistor k41
2SK520 K43
marking k42
mwk41
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PDF
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BUK441
Abstract: BUK441-100A BUK441-100B
Text: N AMER PHILIPS /D I SCRE TE b'JE I m ^53^31 003DS05 TOb • APX Philips Semiconductors Product Specification PowerMOS transistor G E N E R A L DESCRiPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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003DS05
BUK441-100A/B
PINNING-SOT186
BUK441
-100B
bb53R31
BUK441-100A
BUK441-100B
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHI LIP S/ DI SCR ET E 25 E D b b 5 3 T 31 0 0 2 0 4 1 0 =1 • BUK445-500A BUK445-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK445-500A
BUK445-500B
BUK445
-500A
-500B
bb53T31
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PDF
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transistor 5BM
Abstract: BUK443 BUK443-60A BUK443-60B
Text: N AMER PHIL IPS /DISCRETE bTE D m ^^ 53^31 0 D 3 D5 1 S ÔS 5 H A P X Philips Sem iconductors Product Specification PowerMCS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuil-pack envelope. The device is Intended for use In
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OCR Scan
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0D3D51S
BUK443-60A/B
PINNING-SOT186
BUK443
transistor 5BM
BUK443-60A
BUK443-60B
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PDF
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BUK444
Abstract: BUK444-500A BUK444-500B
Text: N AMER P H I L I P S / D I S C R E T E asE kb53T3 1 GDSG37G 1 j> BUK444-500A BUK444-500B PowerMOS transistor T - 3 7 - 0 9 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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kb53T3i
Goaa37a
BUK444-500A
BUK444-500B
BUK444
-500A
-500B
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PDF
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marking CODE n3 6PIN
Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
Text: ２０１０年３月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2
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Original
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2SA1235
marking CODE n3 6PIN
MOSFET TRANSISTOR SMD MARKING CODE nh
INK0001AC
RT8H
2SA798 equivalent
2SC2259
marking code NJ SMD Transistor
MC931 diode
smd transistor marking A7 p7
transistor smd marking ka p7
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PDF
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BUK444
Abstract: 3BS transistor BUK444-800A BUK444-800B buk444 800
Text: N AMER PHILIPS/DISCRETE blE D • ^53^31 0D305^ Philips Semiconductors Product Specification PowerMOS transìstor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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0D305LI5
BUK444-800A/B
OT186
BUK444
3BS transistor
BUK444-800A
BUK444-800B
buk444 800
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PDF
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RP112N321D
Abstract: No abstract text available
Text: RP112x SERIES Low Noise 150mA LDO REGULATOR NO.EA-258-131024 OUTLINE The RP112x Series are CMOS-based voltage regulator LDO ICs, which have been developed using the CMOS process technology, with high output voltage accuracy, low-supply current, low On-resistance transistor,
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RP112x
150mA
EA-258-131024
10kHz
100kHz.
Room403,
Room109,
10F-1,
RP112N321D
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PDF
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL SbE D • 7110fiEb 00442^0 ÜSS « P H I N Philips Components Data sheet status Product specification date of issue March 1991 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
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OCR Scan
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7110fiEb
BUK446
-1000A
-1000B
BUK446-1000A/B
7110fl2b
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PDF
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