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    TRANSISTOR K 3531 Search Results

    TRANSISTOR K 3531 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 3531 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original
    734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 PDF

    dinverter 768r

    Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original
    HEF4527BT HEF4531BT HEF4534BP HEF4534BT MSP-STK430X320 AD9054/PCB AD9054BST-135 IPS521G IPS521S IRL2203S dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601 PDF

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original
    304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC PDF

    BD329

    Abstract: BD330 transistor BD329 transistor BD330 Transistors BD329 power transistor bd329 Power Transistor 1975 B0329 IC TRANSISTOR k 744
    Text: BD329 J V s. SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r -r a d io output sta g e s. P -N -F com plem ent is BD330. M atched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A


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    BD329 OT-32 BD330. O-126 OT-32) 003434b QQ34347 BD329 BD330 transistor BD329 transistor BD330 Transistors BD329 power transistor bd329 Power Transistor 1975 B0329 IC TRANSISTOR k 744 PDF

    ceramic capacitor philips 561

    Abstract: AI mm sot 553 BLV98CE IEC134 transistor k 117 GR
    Text: N AMER PHILIPS/DISCRE TE bTE J> >hiliDs Semiconductors BLV98CE Data sheet status Product specification date of issue March 1 9 9 3 bbS3T31 ODe^lflD 2flG * A P X UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain


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    BLV98CE bbS3T31 OT-171 uca924 ceramic capacitor philips 561 AI mm sot 553 BLV98CE IEC134 transistor k 117 GR PDF

    CI Z 131 R-10

    Abstract: BLW87 h a 431 transistor transistor L6
    Text: N AMER PHILIPS/DISCRETE tlE » • bbS3T31 0051474 72T H A P X BL-VVO A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


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    bbS3T31 OT-123. 7Z67567 CI Z 131 R-10 BLW87 h a 431 transistor transistor L6 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is


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    BUZ384 bbS3i31 00147T0 BUZ384 T-39-13 bb53T31 bb53T31 Q0147TS PDF

    equivalent transistor K 3531

    Abstract: two transistor flyback k 3531 transistor J16110 transistor equivalent table MJW16110 MJ16110 transistor K 3531
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110* D esigner’s Data Sheet NPN Silicon Power Transistors ‘Motorola Pr*f*rr»d Dcvlc« SWITCHMODE Bridge Series . . . specifically designed for use In half bridge and full bridge off line converters.


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    MJ16110* MJW16110* MUR105 MUR170 UR405 MUR470 AR131) equivalent transistor K 3531 two transistor flyback k 3531 transistor J16110 transistor equivalent table MJW16110 MJ16110 transistor K 3531 PDF

    BUZ84A

    Abstract: No abstract text available
    Text: PowerMOS transistor_ BUZ84A_ | N AUER PHILIPS/DISCRETE ObE D • bbSBTBl 0 0 m 7 0 3 5 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metai envelope. This device is intended for use in


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    BUZ84A_ BUZ84A bbS3T31 T-39-13 BUZ84A PDF

    RX1214B150W

    Abstract: No abstract text available
    Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C


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    bb53131 RX1214B150W RX1214B150W PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ 33= 131 0 0 2 0 5 2 0 25E D N AMER P H I L I P S / D I S C R E T E S BUK456-50A BUK456-50B PowerMOS transistor T - 3^-13 GENERAL DESCRIPTION SYM BO L Cfl Q > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    BUK456-50A BUK456-50B BUK456 PDF

    RX1214B150W

    Abstract: transistor bc 325
    Text: J J _ L _ _ N AMER PHILIPS/DISCRETE OLE D • I JJ ^ O5O3J1 3 1 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C


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    bb53131 RX1214B150W resistanc250 RX1214B150W transistor bc 325 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHIL I P S / D I S CR E T E 5SE D fc.b53^31 DDEOSTO 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r-3 i- o i GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    BUK545-50A BUK545-50B BUK545 PDF

    Untitled

    Abstract: No abstract text available
    Text: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to


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    DD1411L BLY87A PDF

    BLY87A

    Abstract: D-05 blv87
    Text: Ob E N AUER P H I L I P S / D I S C RE T E 86D 01878 r D D bbSBTBl 0 O l m i fa 1 • - BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to


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    BLY87A jKS84 BLY87A D-05 blv87 PDF

    transistor C3230

    Abstract: RC42G ra902 d2581 collins parts DA3f3 k C3230 mp1 transistor power supply schematic diagram ScansU9X26
    Text: CO LLINS MP-1 Mobile Power Supply instruction sheet Cedar R apids D ivision \ Collins Radio Com pany, C ed ar Rapids, Iow a 523-0107000-003311 3rd Edition, 15 January 1965 C o llin s R a d io C om pany 1961, 1965 Printed in U.S.A. 1 . D escription. The M P-1 converts 12-volt d-c energy from an auto­


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    12-volt 12-volt 351D-2 KWM-2/351D-2 INI49I. C580-I5-5 transistor C3230 RC42G ra902 d2581 collins parts DA3f3 k C3230 mp1 transistor power supply schematic diagram ScansU9X26 PDF

    equivalent transistor K 3532

    Abstract: equivalent transistor K 3533 "Op Amp" lm139 DIODE V10-20 equivalent transistor K 3531 k 3531 transistor
    Text: LM613A/LM613 National ÆSASemiconductor LM613A/LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference General Description Features The operational amplifiers are a versatile common-mode-tothe-negative-supply "single supply” type similar to the


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    LM613A/LM613 LM613A/LM613 LM124 LM139 LM185 equivalent transistor K 3532 equivalent transistor K 3533 "Op Amp" lm139 DIODE V10-20 equivalent transistor K 3531 k 3531 transistor PDF

    TLP503

    Abstract: TLP501 TLP582 tlp505 TL 582 OPTICAL COUPLER triac based ac motor speed control using light Toshiba tlP521 Photocoupler TLP506G k 3531 transistor
    Text: 8. Application Note 8-1 8-1-1 Outline of Photocouplers Description of Photocouplers for General Purposes • Structure and Basic Characteristics Demand for photocouplers entered a real growth period around 1977. The background for this is the increasing application in signal transmission between CPU and peripheral


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    PDF

    smd code HF transistor

    Abstract: transistor SMD MARKING CODE HF marking code CIE SMD Transistor transistor smd marking hf SMD HF transistor smd code marking rf ft sot23 SMD Transistor 7e K TRANSISTOR SMD MARKING CODE 596 m 147 smd transistor SMD TRANSISTOR MARKING 76
    Text: • hbS3131 0DE47Qfl 14fl ■ N AMER P H I L I P S / D I S C R E T E APX BF824 fc.7E D J V_ H.F. SILICON PLANAR EPITAXIAL T RA N SIST O R P-N-P transistor in a plastic SO T-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for S M D applications.


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    hbS3131 QDE47QS BF824 OT-23 7z72158 DDEM713 BF824 7z72157 7z72161 smd code HF transistor transistor SMD MARKING CODE HF marking code CIE SMD Transistor transistor smd marking hf SMD HF transistor smd code marking rf ft sot23 SMD Transistor 7e K TRANSISTOR SMD MARKING CODE 596 m 147 smd transistor SMD TRANSISTOR MARKING 76 PDF

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 PDF

    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


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    PDF

    1408P

    Abstract: 1408P-LOO-3CB POWER SUPPLY USING TL594 k 3531 transistor
    Text: g MOTOROLA Precision Sw itchm ode Pulse Width M odulation Control Circuit The TL594 is a fixed frequency, pulse width modulation control circuit designed prim arily for Switchmode power supply control. PRECISION SWITCHMODE PULSE WIDTH MODULATION CONTROL CIRCUIT


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    TL594 SO-16) 1408P-LOO-3CB TL594 1408P 1408P-LOO-3CB POWER SUPPLY USING TL594 k 3531 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability


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    bb53T31 BFQ67W OT323 UBC870 OT323. OT323 PDF

    MC33160P

    Abstract: No abstract text available
    Text: M M O T O R O L A — — — Microprocessor Voltage Regulator and Supervisory Circuit The MC34160 Series is a voltage regulator and supervisory circuit containing many of the necessary monitoring functions required in microprocessor based systems. It is specifically designed for appliance and industrial applications,


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    MC34160 01011M7 MC33160 L3L72S3 MC33160P PDF