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    TRANSISTOR K 265 Search Results

    TRANSISTOR K 265 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 265 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK9635-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9635-100A

    BUK9535

    Abstract: BUK9635-100A
    Text: D2 PA K BUK9635-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9635-100A BUK9535 BUK9635-100A

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK9635-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9635-100A 771-BUK9635-100A118 BUK9635-100A

    KD621K20

    Abstract: No abstract text available
    Text: m ß /B S K KD621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD621K20 Amperes/1000 KD621K20

    Untitled

    Abstract: No abstract text available
    Text: K W E R E X KD621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD621K20 Amperes/1000 72T4b51

    kd721K

    Abstract: No abstract text available
    Text: 7294621 POWE RE X INC ' m Tfl I>F| 7ET4LS1 DODSabl 4 N E R E K KD721KA2 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Dual Darlington Transistor Module 25 Amperes/1000 Volts Description Powerex Dual Darlington Transistor Modules are designed for use in


    OCR Scan     		PDF KD721KA2 Amperes/1000 kd721K

    7B468

    Abstract: 7B465 76465 75469 sn75466 sn75465
    Text: SN75465 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS D 2 6 2 5 , DECEMBER 1 9 7 6 -REVISED SEPTEMBER 1 9 8 6 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRA YS 500-mA Rated Collector Current Single Output D OR N P A C K A G E (TO P V IEW ! • High-Voltage Outputs . . . 100 V


    OCR Scan     		PDF SN75465 SN75469 500-mA ULN2005A, ULN2001 ULN2002A, ULN2003A, ULN2004A, SN7S465 7B468 7B465 76465 75469 sn75466

    TRANSISTOR SE 135

    Abstract: BUK455 BUK455-50B BUK455-50A T0220AB
    Text: N AMER PHILIPS/DISCRETE SSE D m Ljfci53ci31 □□504ÔS 7 • Po w erM O S tra n s isto r B U K 455-50A B U K 455-50B T-31-Ì3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF Lifci53cà BUK455-50A BUK455-50B BUK455 TRANSISTOR SE 135 BUK455-50B T0220AB

    TC-7986A

    Abstract: 2SK2112 CMS01 7986A diode lt 0236
    Text: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,


    OCR Scan     		PDF 2SK2112 oeTi14 a-Ti4S24# TC-7986A CMS01 7986A diode lt 0236

    TC-7606

    Abstract: 2SK1283
    Text: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to


    OCR Scan     		PDF 2SK1283 2SK1283 TC-7606

    ym 26500

    Abstract: No abstract text available
    Text: K-BAND BIPOLAR OSCILLATOR TRANSISTOR OUTLINE DIMENSIONS Units in nm FEATURES_ • FUNDAMENTAL OSCILLATION GREATER NE64800 (CHIP) THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER MIL-SPEC TEMP RANGES ÜH Bonding Area ELECTRICAL CHARACTERISTICS (t a - 2 5 - c >


    OCR Scan     		PDF NE64800 NE64800 S22-S21 ym 26500

    TC7988

    Abstract: 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q
    Text: M O STféïl-f^ jÎJiP: h 37 > v J X ^ M O S Field Effect Transistor r ^ j_ C I E • •fc I ÌK N 2 S K 2 1 5 8 MOS FET r ü iH X -f y 2 S K 2 1 5 8 I Î1.5 V l E l i £ -f U , fÉ ÎŒ T ig B T 't , ÿ 9 Æ3 * J U i ^ M O S F E T T 5* A 'O K -7 - f 'V y


    OCR Scan     		PDF 2SK2158 2SK2158Ià 73pDpà IEI-620) 1-N00 TC7988 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q

    ST25C

    Abstract: st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI
    Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O J I P W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


    OCR Scan     		PDF 00DRS51 flBES100 VB-12SV ST25C st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI

    2SC2331

    Abstract: SIRBA TC5344A if4g 2SA1008 PBT GF 20 PBT GF 10 fr 2SC2331 Y
    Text: T -5 > • S / - h s < r> — Silicon Power Transistor 2SC2331 N R N x t ^ + '> 7 ; H * > 'J U > h =7 I i f f l 2 S C 2 3 3 1 ia iS fê x ^ ^ 7 > /X n -, v - f > rm t U K ? n f c 7 - f > 7'- w t - ^ ( f - f i ¿*<7 K ÿ ^ f '< £ i r M M x - t o iff : m m )


    OCR Scan     		PDF 2SC2331 2SA1008 sC-46 220AB SIRBA TC5344A if4g 2SA1008 PBT GF 20 PBT GF 10 fr 2SC2331 Y

    Untitled

    Abstract: No abstract text available
    Text: 4SE » ISOCOn COMPONENTS LTD • T ^ -Ì5 4flflb510 0000312 3 « I S O MOC 8080X 1 »ff ft,'Uiußib^k kCB » I‘4~>'■ / 'f W V ”> \ ■^ ^ « " V * - ! . p ^ ^ .: 1! ' . J|^à^p ^ p .». MffVI ■ SlP ?M OPTICALLY COUPLED ISOLATOR DARLINGTON TRANSISTOR OUTPUT


    OCR Scan     		PDF 4flflb510 8080X 8080X

    smd transistor 2f

    Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
    Text: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.


    OCR Scan     		PDF Tap15 FTO-220 S10VB S15VB S15VBA S25VB S50VB S10WB S15WB S20WB smd transistor 2f 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z

    lt 7209

    Abstract: No abstract text available
    Text: MSE ]> ISOCOn COMPONENTS LTD • MflâbSlO 0D0Q24b S ■ ISO CNX 72AX V v 'h k W ^ y x & i'. ■ r; ; - j.' OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT D E S C R IP T IO N The CNX 72AX is a optically coupled isolator consisting o f a G allium Arsenide infrared emitting


    OCR Scan     		PDF 0D0Q24b lt 7209

    b310 diode

    Abstract: diode ssil
    Text: 1DI75F-120 75a M ïfé '+ iÈ : Outline Drawings POWER TRANSISTOR MODULE : Features • S Ü ÎE E • High. Voltage 7'J—s f c ' f L / / ' ? ' K f * 3 f f l E • A S O * ''J a L ' •mmr* Including Free W heeling Diode Excellent Safe Operating Area i nsulated Type


    OCR Scan     		PDF 1DI75F-120 I95t/R b310 diode diode ssil

    11H19

    Abstract: B307
    Text: 1DI75E-120 75a •’ Outline Drawings POWER TRANSISTOR MODULE : F e a tu re s • SW Œ High Voltage • 7 U —sjî'f K rtJR • A S O à 'lS l' • flêäüffi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type If fliÊ : A p p lic a tio n s


    OCR Scan     		PDF 1DI75E-120 11H19^ l95t/R89 11H19 B307

    LTTG

    Abstract: 1DI75E-100 30S3 M206 T460 T760 T930
    Text: 1DI75E-100 75a / < 7 n .-)U - h 7 I • Out l i ne D raw ings POWER TRANSISTOR MODULE : Features • If/± • High Voltage 7 '; - j m uv * • A S O tf^ v .' - k rt * Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type \R ìà • A p p lic a tio n s


    OCR Scan     		PDF 1DI75E-100 I95t/R89) Shl50 LTTG 30S3 M206 T460 T760 T930

    2SK872

    Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
    Text: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss


    OCR Scan     		PDF 2SK872 2SK872 IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717

    b&r b303

    Abstract: No abstract text available
    Text: 1DI5OH-12O 50a • O utline D rawings POWER TRANSISTOR MODULE : F e a tu re s • S ltfE High Voltage • 7>J— U K l * 3 i • A S O A ''i£ i.' • ü ê lU fi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type : A p p lic a tio n s


    OCR Scan     		PDF 1DI5OH-12O b&r b303

    Untitled

    Abstract: No abstract text available
    Text: ISOCOfl COMPONENTS LTD m u * » t« v . . ir f J i m * » w w » * « » « a » ? j > •3 'V . M i i M S M Haatsio Dooosbs 3 HSE ]> g K M M frn * f t Jf ö iso t WMT3 i j w V > Æ > W i J ö * I £ # •V f t ! OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT


    OCR Scan     		PDF

    acrian RF POWER TRANSISTOR

    Abstract: TU S1 3003 VTV-300 VTV-300-2 DDD1557 acrian RF POWER TRANSISTOR cd4792-4 VTV-300-4 F627 F627-8 F627-8-Q1
    Text: 0182998 ACRIAN m ybui i» m w « p in y in a w M K • ■ ■ <p w * w T7 INC m m w v m m « m m h D Ë^G lflETifl n a n a a m a m n n w □D01524 S T—33—13 i A GENERAL VTV-300 DESCRIPTION The VTV-300 is a silicon NPN transistor designed for broadcast


    OCR Scan     		PDF T-33-13 VTV-300 F627-8 acrian RF POWER TRANSISTOR TU S1 3003 VTV-300-2 DDD1557 acrian RF POWER TRANSISTOR cd4792-4 VTV-300-4 F627 F627-8-Q1