TRANSISTOR K 2021 Search Results

TRANSISTOR K 2021 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR K 2021 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor K 3596 Abstract: TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 Typ @ IC = 2.0 Adc	Original	MJE700 MJE800 T0220AB, MJE700T MJE800T MJE702 MJE703 MJE802 transistor K 3596 TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100	PDF
MGM219 Abstract: 9335 895 BC817 BFG21W DCS1800 MGM224 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING • High power gain PIN  High efficiency	Original	M3D124 BFG21W DCS1800, R77/03/pp11 MGM219 9335 895 BC817 BFG21W DCS1800 MGM224	PDF
Motorola transistor 388 TO-204AA Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —	Original	2N6030 2N6031 2N5630) 2N6035, 2N6038 2N6036, 2N6039 225AA 2N6035 2N6036* Motorola transistor 388 TO-204AA 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING • High power gain PIN  High efficiency	Original	M3D124 BFG21W DCS1800, R77/03/pp11	PDF
tyco igbt Abstract: V23990-P485-A D813 tyco pim GE 639 Text: V23990-P485-A flow PIM 1, 600V version 0303 Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode Dauergrenzstrom	Original	V23990-P485-A D81359 tyco igbt V23990-P485-A D813 tyco pim GE 639	PDF
2SA1046 Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547  Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and	Original	2N6547 CASE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA1046 TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547	PDF
2SA1046 Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.	Original	2N6251 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SA1046 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936	PDF
transistor mj11032 equivalent Abstract: transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc	Original	TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 transistor mj11032 equivalent transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326	PDF
tyco igbt Abstract: tyco P484 tyco igbt P484 V23990-P484-A Tyco flow pim Text: V23990-P484-A flow PIM 1, 600V version 0303 Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode Dauergrenzstrom	Original	V23990-P484-A D81359 tyco igbt tyco P484 tyco igbt P484 V23990-P484-A Tyco flow pim	PDF
BU108 Abstract: C 3883 2SA1046 2SC7 MOTOROLA TIP115 transistor TIP116 TEXAS All similar transistor 2sa715 BU326 BU100 2N6254 REPLACEMENT Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 1.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc	Original	TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 220AB BU108 C 3883 2SA1046 2SC7 MOTOROLA TIP115 transistor TIP116 TEXAS All similar transistor 2sa715 BU326 BU100 2N6254 REPLACEMENT	PDF
bd139 equivalent transistor Abstract: transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE pin configuration transistor bd140 transistor bd610 transistor equivalent book 2sc2238 ST T8 3580 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16106  Data Sheet Designer's NPN Silicon Power Transistor Switchmode Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. • • • • • • POWER TRANSISTORS	Original	MJE16106 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 bd139 equivalent transistor transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE pin configuration transistor bd140 transistor bd610 transistor equivalent book 2sc2238 ST T8 3580	PDF
mj11015 equivalent Abstract: MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor	Original	TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 mj11015 equivalent MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000	PDF
CPM2C MAD11 OMRON Operation Manual Abstract: CPM1A-MAD11 cs1w-cn226 MAD11 omron CPM2c-32EDT CPM1-CIF01 power supply circuit diagram omron sysmac cpm2a Omron cpm2a SUPPORT SOFTWARE CPM2A-60CDR-A OMRON CPM2A Text: CPM2A Specifications CPM2A General Specifications Item Supply pp y voltage g Operating p g voltage g range Power consumption p Inrush current External power supply AC power supplies only AC power DC power AC power DC power AC power DC power AC power DC power	Original	AT28C256 CPM2C MAD11 OMRON Operation Manual CPM1A-MAD11 cs1w-cn226 MAD11 omron CPM2c-32EDT CPM1-CIF01 power supply circuit diagram omron sysmac cpm2a Omron cpm2a SUPPORT SOFTWARE CPM2A-60CDR-A OMRON CPM2A	PDF
BFG480W Abstract: 1184 transistor analog transistor B 1184 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain PIN DESCRIPTION	Original	M3D124 BFG480W MSB842 R77/03/pp16 BFG480W 1184 transistor analog transistor B 1184	PDF

nec ps2021 Abstract: T-AV83 PS2021 1581m Text: N E C ELECTRONICS INC 3QE D • T - W* f 3 b4E7S2S 002=1^40 fl ■ PHOTO COUPLER P S 2021 PHO TO COUPLER High Isolation Voltage Single Transistor — n e p o c s e r ie s — D E S C R IP T IO N The PS2021 is an optically coupled isolator containing a GaAs light em itting diode and an NPN silicon photo transistor.	OCR Scan	PS2021 PS2021 J22686 nec ps2021 T-AV83 1581m	PDF
Untitled Abstract: No abstract text available Text: EL2021C étantec KiGMp c w g r m ä ü c e rat eocwcöTts EL2021C Monolithic Pin Driver F e a tu r e s G e n e r a l D e s c r ip tio n • Wide range o f programmable analog output levels T he E L 2021 is designed to drive programmed voltages into dif ficult loads. I t has the required circuitry to be used as the pin	OCR Scan	EL2021C	PDF
Transistor MP 1715 Abstract: transistor EM 9163 D 1878 TRANSISTOR Text: T h o t HEWLETT mL/ÜMP A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2021 Series Features Description Pin Configuration • Frequency Range: 10 to 2000 MHz The 2021 Series Is a wideband thin-film bipolar RF amplifier with	OCR Scan		PDF
TRANSISTOR 9335 Abstract: BFG480W Text: DISC RETE S E M IC O N D U C TO R S BFG480W NPN wideband transistor 1998 M ar 06 P relim inary specification File under D iscrete S em iconductors, SC 14 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification NPN w i d e b a n d t ransi st or	OCR Scan	BFG480W 125104/00/01/pp16 TRANSISTOR 9335 BFG480W	PDF
Untitled Abstract: No abstract text available Text: AVANTEK INC MME J> HM nbb e bava 0000065 UTO/UTC 2021 Series Thln-Fllm Cascadable Amplifier 10 to 2000 MHz f - W 3>-o FEATURES . APPLICATIONS • IF/RF Amplification • System Front End • Frequency Range: 10 to 2000 MHz • Noise Figure: 3.7 dB (Typ • Low VSWR	OCR Scan	hermet878	PDF
500 DKZ Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt	OCR Scan	150/160-MHz-Band 500 DKZ TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren	PDF
BI 344 TRANSISTOR Abstract: l43 transistor transistor dk qe 9335 895 DK 53 code transistor Text: DISCRETE SEMICONDUCTORS s h eet BFG21W UHF power transistor 1998 Jul 06 Product specification Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification UHF power transistor	OCR Scan	BFG21W OT343R SCA60 04/00/03/pp1 BI 344 TRANSISTOR l43 transistor transistor dk qe 9335 895 DK 53 code transistor	PDF
bdl 40 Abstract: l43 transistor transistor marking 2d ghz 9335 895 BFG480W Text: DISCRETE SEMICONDUCTORS sheet BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jul 09 PHILIPS Philips Semiconductors Preliminary specification NPN wideband transistor	OCR Scan	BFG480W BFG480W SCA60 04/00/02/pp1 bdl 40 l43 transistor transistor marking 2d ghz 9335 895	PDF
transistor B 1184 Abstract: MGR638 BFG480W Text: DISCRETE SEMICONDUCTORS BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 Philips Semiconductors 1998 Oct 21 PHILIPS Philips Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain	OCR Scan	BFG480W BFG480W MSB842 SCA60 125104/00/03/pp16 transistor B 1184 MGR638	PDF
LS 2027 audio amp Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3	OCR Scan		PDF

TRANSISTOR K 2021 Search Results

TRANSISTOR K 2021 Result Highlights (5)

TRANSISTOR K 2021 Datasheets Context Search

transistor K 3596

MGM219

Motorola transistor 388 TO-204AA

Untitled

tyco igbt

2SA1046

2SA1046

transistor mj11032 equivalent

tyco igbt

BU108

bd139 equivalent transistor

mj11015 equivalent

CPM2C MAD11 OMRON Operation Manual

BFG480W

nec ps2021

Untitled

Transistor MP 1715

TRANSISTOR 9335

Untitled

500 DKZ

BI 344 TRANSISTOR

bdl 40

transistor B 1184

LS 2027 audio amp