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    TRANSISTOR K 1119 Search Results

    TRANSISTOR K 1119 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 1119 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UNR1110

    Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
    Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ


    Original     		PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119

    common collector PNP

    Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118
    Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ


    Original     		PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) common collector PNP UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118

    CD909

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CD909 CD909 NPN PLASTIC POWER TRANSISTOR Power Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 F K


    Original     		PDF ISO/TS16949 O-220 CD909 C-120 CD909

    CSC3039

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CSC3039 CSC3039 NPN PLASTIC POWER TRANSISTOR Switching Regulator Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 C E F K


    Original     		PDF ISO/TS16949 O-220 CSC3039 C-120 CSC3039

    CSC1061

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CSC1061 CSC1061 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 F K All dim insions in m m .


    Original     		PDF ISO/TS16949 O-220 CSC1061 C-120 CSC1061

    CSC945

    Abstract: CSA733
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-92 Plastic Package CSA733 PNP SILICON PLANAR EPITAXIAL TRANSISTOR Low Frequency Amplifier Complementary to CSC945 B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG


    Original     		PDF ISO/TS16949 CSA733 CSC945 C-120 CSC945 CSA733

    CSA733

    Abstract: CSC945
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package CSA733 PNP SILICON PLANAR EPITAXIAL TRANSISTOR Low Frequency Amplifier Complementary to CSC945 B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18


    Original     		PDF CSA733 CSC945 C-120 CSA733 CSC945

    csa733

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package CSA733 PNP SILICON PLANAR EPITAXIAL TRANSISTOR Low Frequency Amplifier Co m plem entary to CSC945 B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18


    Original     		PDF CSA733 CSC945 C-120 csa733

    ts 4141 TRANSISTOR

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-3P 3 leads Thru-hole Fully Isolated Plastic Package Package Outline, Packaging and Handling Information Continental Device India Limited Data Sheet Page 1 of 5


    Original     		PDF C-120 DrawingRev151001 ts 4141 TRANSISTOR

    ts 4141 TRANSISTOR

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-3P 3 leads Thru-hole Fully Isolated Plastic Package Package Outline, Packaging and Handling Information Continental Device India Limited Data Sheet Page 1 of 5


    Original     		PDF C-120 DrawingRev151001 ts 4141 TRANSISTOR

    Transistor 126

    Abstract: transistor GR 345
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-3P 3 leads Thru-hole Fully Isolated Plastic Package Package Outline, Packaging and Handling Information Continental Device India Limited Data Sheet Page 1 of 5 TO-3P Package, Packaging and Handling


    Original     		PDF ISO/TS16949 C-120 DrawingRev151001 Transistor 126 transistor GR 345

    ts 4141 TRANSISTOR

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220FP 3 leads Thru-hole Fully Isolated Plastic Package Package Outline, Tube Packing, Packaging and Handling Information Continental Device India Limited Data Sheet


    Original     		PDF O-220FP O-220FP C-120 O220FP DrawingRev151001 ts 4141 TRANSISTOR

    TO220 Semiconductor Packaging

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 3 leads Thru-hole Plastic Package Package Outline, Tube Packing, Packaging and Handling Information Continental Device India Limited Data Sheet Page 1 of 5 Continental Device India Limited


    Original     		PDF ISO/TS16949 O-220 O-220 C-120 TO220 Semiconductor Packaging

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220FP 3 leads Thru-hole Fully Isolated Plastic Package Package Outline, Tube Packing, Packaging and Handling Information Continental Device India Limited Data Sheet


    Original     		PDF O-220FP O-220FP C-120 O220FP DrawingRev151001

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 3 leads Thru-hole Plastic Package Package Outline, Tube Packing, Packaging and Handling Information Continental Device India Limited Data Sheet Page 1 of 5


    Original     		PDF O-220 O-220 C-120

    TRANSISTOR BO 346

    Abstract: FL082 TC-6181 5511B
    Text: Compound Transistor BA1 L3M # ili o ' < 4 7 a f f i t i i R , = 4 . 7 kQ, r t l L t l ' i t . R 2 = 4 . 7 k£2 O B N 1L 3 M t ? > - f i) / > ? i) f " f t'» ? T " è £ t (Ta = 25 °C) m n b 7 9 • XM W & =/ V <? 9 •i ; -'9 3 - : ' 9 * '': A i!H'tu^' i.


    OCR Scan     		PDF PWS10 TRANSISTOR BO 346 FL082 TC-6181 5511B

    MCp*3041

    Abstract: MCP3031 740L6000 MCP3041 H11AA1 equivalent MCA2231Z MCP3040 CNX35 equivalent 740L6000 equivalent C1343
    Text: M QUALITY • [ TECHNOLOGIES OPTOCOUPLERS HIGH SPEED OPTOCOUPLERS n FAN-IN/FAN-OUT AND CTR AT 0-70°C; ALL WITHSTAND TEST VOLTAGES ARE 2500 VAC RMS 1 MIN. EQUIVALENT CIRCUIT FAN-IN/FAN-OUT OR CTR MIN. @ lF—mA DATA RATE NRZ TYP. CMR TYP. COMMENT BVceo Logic


    OCR Scan     		PDF 740L6000 740L6001 740L6010 MCA2255Z MCA255 MCA2230Z MCA230 MID400 H11AA1 H11AA2 MCp*3041 MCP3031 740L6000 MCP3041 H11AA1 equivalent MCA2231Z MCP3040 CNX35 equivalent 740L6000 equivalent C1343

    transistor d 1991 ar

    Abstract: No abstract text available
    Text: b'lE D N AUER P H ILIP S /D IS C R E TE • b b S B 'm 00 2T 7 22 074 H A P X Product specification Philips Semiconductors BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


    OCR Scan     		PDF BLY91C/01 T122F1 OT122F bb53131 transistor d 1991 ar

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    sm 0038

    Abstract: K 1113 BDY58 Transistor 126 BUV10N transistor 12E transistor 1B
    Text: MOTOROLA SC XSTRS/R 12E D | F b 3 b 7 2 S4 GGâM â? T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 25 AM PERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high current, high speed, high power applications.


    OCR Scan     		PDF b3b72S4 20atlc BDY58 AN415A) sm 0038 K 1113 BDY58 Transistor 126 BUV10N transistor 12E transistor 1B

    gis 110 kv

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK9518-55 T0220AB gis 110 kv

    K1118

    Abstract: MJ3029 transistor k 1119 transistor K 3532 d 1669 transistor MJ2955 300 watts amplifier MJ2955A he01 Ic as20
    Text: M Q T O R C L A SC XSTRS/R F 12E D | b3 b 7 E 5 4 0084*177 3 | M J2955 — MOTOROLA S e e P g r 3 -6 M J2955A — SEMICONDUCTOR See P g .3 -9 TECHNICAL DATA MJ3029 NPN SILICON HIGH-VOLTAGE TRANSISTOR 5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for T V horizontal and vertical deflection amplifier


    OCR Scan     		PDF b3b725M MJ2955- MJ2955A MJ3029 K1118 MJ3029 transistor k 1119 transistor K 3532 d 1669 transistor MJ2955 300 watts amplifier MJ2955A he01 Ic as20

    BLY91

    Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
    Text: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _


    OCR Scan     		PDF 711062b 00b3bn BLY91C/01 lthasaSOT122F -SOT122F MB8012 BLY91 BH 1117 F Silicon Epitaxial Planar Transistor philips

    1117 S Transistor

    Abstract: sot122f
    Text: N AUER PH I L I PS /D IS CR ETE b'îE D • ^53131 002^722 07M H A P X Philips Sem iconductors Product_gpgcitication BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


    OCR Scan     		PDF BLY91C/01 OT122F OT122F_ 1117 S Transistor sot122f