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    TRANSISTOR JC 539 Search Results

    TRANSISTOR JC 539 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR JC 539 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE BUZ 537

    Abstract: C67078-S1453-A2 BUZ271
    Text: SIPMOS Power Transistor BUZ 271 ● P channel ● Enhancement mode ● Avalanche rated Type VDS ID RDS on Package 1) Ordering Code BUZ 271 – 50 V – 22 A 0.15 Ω TO-220 AB C67078-S1453-A2 Maximum Ratings Parameter Symbol Values Continuous drain current, TC = 26 ˚C


    Original     		PDF O-220 C67078-S1453-A2 DIODE BUZ 537 C67078-S1453-A2 BUZ271

    cc 3053

    Abstract: 2N6300 2N6301
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 22 November 2009. INCH-POUND MIL-PRF-19500/539E 22 August 2009 SUPERSEDING MIL-PRF-19500/539D 28 March 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER,


    Original     		PDF MIL-PRF-19500/539E MIL-PRF-19500/539D 2N6300 2N6301, MIL-PRF-19500. cc 3053 2N6301

    transistor marking A9

    Abstract: diode MARKING A9 diode MARKING CODE A9 A9 sot223 mosfet marking a9 L55012 p1 52ax 52LX marking 24b sot-23 51DX
    Text: APL5501/2/3 Low IQ, Low Dropout 500mA Fixed Voltage Regulator Features APL5501 BP 5 1 2 3 V IN GND Notebook Computer PDA or Portable Equipments Noise-Sensitive Instrumentation Systems General Description IN 1 8 OU T GND 2 7 GN D GND 3 6 GN D SHDN 4 5 BY P


    Original     		PDF APL5501/2/3 500mA 150mA OT-23-5, OT-89, OT-89-5, OT-223, O-252 O-252-5 APL5501 transistor marking A9 diode MARKING A9 diode MARKING CODE A9 A9 sot223 mosfet marking a9 L55012 p1 52ax 52LX marking 24b sot-23 51DX

    4606 MOSFET INVERTER

    Abstract: SMD MOSFET DRIVE DATASHEET 4606 mosfet cross reference inverter 4606 A12A 4606 inverter ic eltek flatpack LED DRIVER ana 618 uc3843 inverter circuit 4606 inverter KA3843
    Text: Shortform Catalog February 2001 http://www.micrel.com/ Micrel Semiconductor • 1849 Fortune Drive • San Jose, CA 95131 • USA • +1 408 944-0800 • +1 408 944-0970 Micrel Shortform Catalog February 2001 2001 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any


    Original     		PDF

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan     		PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram

    tms 2300

    Abstract: HIC037 transistor bf 175
    Text: TMS4020NC • Mechanical data and pin alignments Add the following data: The TM S 40 20 NC is also available in a 22 pin dual-in line package w ith 400-m il spacing between leads. The pin assignments are as shown. FUNCTION PIN NO. FUNCTIC 1 2 3 4 5 6 Ag Ag


    OCR Scan     		PDF TMS4020NC 400-m TIH101 tms 2300 HIC037 transistor bf 175

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS SIPMOS Power Transistor • • • BUZ 271 P channel Enhancement mode Avalanche rated VPT05381 G Type ^DS io ^ D S on Package 1> Ordering Code BUZ 271 -5 0 V -2 2 A 0.15 £2 TO-220 AB C67078-S1453-A2 Maxim um Ratings Parameter Symbol Continuous drain current, Tc


    OCR Scan     		PDF VPT05381 O-220 C67078-S1453-A2

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


    OCR Scan     		PDF CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58

    MJE2370

    Abstract: MJE2520 2sc 043 538 NPN transistor
    Text: MJE2520 silicon 3.0 AMPERE POWER TRANSISTOR NPN SILICON MEDIUM-POWER TRANSISTOR NPN SILICON . . . designed for use in general-purpose amplifiers as drivers and as switches. 40 VOLTS 40 WATTS Collector-Emitter Saturation Voltage V cE(sat) = 0 7 Vdc (Max) @ lc = 1.0 Ade


    OCR Scan     		PDF MJE2520 MJE2370 MJE2370 MJE2520 2sc 043 538 NPN transistor

    MA2Q738

    Abstract: MA738
    Text: Regulations No.: IC3F5090 Total Pages Page 15 1 Part No. AN8016NSH-A Package Code No. SSOP010-P-0225A Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established by k. oU'i Applied by Checked by Prepared by M.Hiramatsu M.Yamanaka M.Motomori


    OCR Scan     		PDF IC3F5090 AN8016NSH-A SSOP010-P-0225A 218016N00107110 AN8016NSH-A MA2Q738 MA738

    smd npn 2n2222

    Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
    Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.


    OCR Scan     		PDF 2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200

    marking L64

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR FAI F4Z M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • Resistor Built-in TYPE B O -A W R i = 2 2 k i2 • Complementary to FN1F4Z ABSOLUTE M A XIM U M RATINGS Maximum Voltages and Currents Ta - 2 5


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 74 A SiPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 74 A Vbs 500 V 1D 2.1 A flbston 4Ü Package Ordering Code TO-220 AB C67078-S1314-A3 Maximum Ratings Parameter Symbol Continuous drain current Values


    OCR Scan     		PDF O-220 C67078-S1314-A3 0235bOS 235b05

    t750

    Abstract: ds 300 u810
    Text: an A M P com pany RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012711 D esigned for Frequency H opping Systems 30-90 MHz I.ower Capacitances for Broadband O peration


    OCR Scan     		PDF A3012711 FH2114 t750 ds 300 u810

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN 5246 Thick Film Hybrid 1C STK400-010 AF Power Amplifier Split Power Supply (10W + 10W + 10W min, THD = 0.4%) Overview Package Dimensions The STK400-010 is an audio power amplifier IC for multi­ channel speaker applications. It comprises three 10W


    OCR Scan     		PDF STK400-010 STK400-010 STK400-X00 STK401-X00

    MUR1550

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR bäE » • M302271 GDSOaSt. b'ìS H H A S an HARRIS MUR1540, RURP1540, MUR1550, uu s e m ic o h d o c to r RURP1550 MUR1560,RURP1560 15A, 400V - 600V Ultrafast Diodes December 1993 Package Features • Ultrafast with Soft Recovery Characteristic


    OCR Scan     		PDF M302271 MUR1540, RURP1540, MUR1550, RURP1550 MUR1560 RURP1560 O-220AC MUR1550

    transistor buz 10

    Abstract: wo3 TRANSISTOR KDS -5a DIODE BUZ 537 KDS 38 BUZ 271 BUZ271 C67078-S1453-A2 DIODE BUZ BUZ-271
    Text: SIEMENS £2^ - ^ 3 SIPMOS Power Transistor BUZ 271 • P channel • Enhancement mode • Avalanche rated Type Vds Io •^DS on Package 1> Ordering Code BUZ 271 -5 0 V -2 2 A 0.15 Q. TO-220 AB C67078-S1453-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc 38 2 6 *C


    OCR Scan     		PDF O-220 C67078-S1453-A2 SIL03522 SIL03523 transistor buz 10 wo3 TRANSISTOR KDS -5a DIODE BUZ 537 KDS 38 BUZ 271 BUZ271 C67078-S1453-A2 DIODE BUZ BUZ-271

    KD 271

    Abstract: No abstract text available
    Text: SIEMENS 10266 SIPMOS Power Transistor BUZ 271 • P channel • Enhancement mode • Avalanche rated Type BUZ 271 v DS -5 0 V -2 2 A • ^ d s on Package 1> Ordering Code 0.15 Q TO-220 AB C67078-S1453-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 26 ’C


    OCR Scan     		PDF O-220 C67078-S1453-A2 SIL03515 KD 271

    2SD588A

    Abstract: 2SD588 2SD587A 2SD78A 2SB504A 2SD587 2SD287A 2SB57A 2SB67A 2SD365A
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SD587A 2SD588A 2SB546A 2SD401A 2SD402A 7-C-25X) 2SD476A 2SD666A 2SD667A 2SD588A 2SD588 2SD78A 2SB504A 2SD587 2SD287A 2SB57A 2SB67A 2SD365A

    RSN 3306 H

    Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
    Text: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS


    OCR Scan     		PDF 54S/74S RSN 3306 H ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor

    ic 7496

    Abstract: 2SC4840 2SC484
    Text: TOSHIBA 2SC4840 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4840 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . N F = l.ld B , |S2 i e l 2 = 13dB f = 1GHz MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC4840 ic 7496 2SC4840 2SC484

    74L47

    Abstract: a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600
    Text: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS


    OCR Scan     		PDF CC-401 10072-41-US 54S/74S 74L47 a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600

    SN76670

    Abstract: sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013
    Text: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS


    OCR Scan     		PDF CC-401 10072-41-US 54S/74S 54H/74H 54L/74L TIH101 SN76670 sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013