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    TRANSISTOR J39 Search Results

    TRANSISTOR J39 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J39 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    motorola MRF559

    Abstract: mrf559 transistor mrf559d J368 mw 137 MRF559 transistor J306 mrf559 v J9018 j353 transistor
    Text: MOTOROLA Order this document by MRF559/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF559 . . . designed for UHF linear and large–signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts


    Original     		PDF MRF559/D MRF559 motorola MRF559 mrf559 transistor mrf559d J368 mw 137 MRF559 transistor J306 mrf559 v J9018 j353 transistor

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40

    CGH40006P

    Abstract: 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40

    CGH40006P-TB

    Abstract: RO5880 006P CGH40006P JESD22 CGH40006
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40 CGH40006P-TB RO5880 006P JESD22 CGH40006

    cgh40006p

    Abstract: RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40 RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR

    transistor f1 j39

    Abstract: UPB1904B j521 ultrarf
    Text: URFDB Sec 03_1904B 11/3/99 10:20 AM Page 3-10 UPB1904B 4W, 1.9GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 1.9GHz. Rated with a minimum output power of 4W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		PDF 1904B UPB1904B 30dBc 100oC 175oC transistor f1 j39 UPB1904B j521 ultrarf

    fc1a-cla

    Abstract: PFA-1A54A PF2-CLA PFA-1A51 cable PFA-1A11 PFA-1A51 FC1A-C1A1E relay 12v 220v i/o FC1A-C2A1E relay 12v dc
    Text: U905 Catalog Section A note from IDEC: Due to continuous product improvements, specifications are subject to change without notice. For up-to-date information, or to request a full copy of this catalog, please visit us at www.idec.com Programmable Logic Controllers


    Original     		PDF CP11T CP12/13 fc1a-cla PFA-1A54A PF2-CLA PFA-1A51 cable PFA-1A11 PFA-1A51 FC1A-C1A1E relay 12v 220v i/o FC1A-C2A1E relay 12v dc

    J37 transistor

    Abstract: No abstract text available
    Text: Quick Start Guide TRK-S12ZVH128 S12 MagniV MCU for Automotive Instrument Cluster Applications Quick Start Guide Get to Know the TRK-S12ZVH128 Potentiometer Enable Potentiometer I2C Header User Buttons SPI Header Power Connector S12ZVH128 MCU Power Switch Stepper Motor


    Original     		PDF TRK-S12ZVH128 S12ZVH128 TWRPI-MMA845xQ TRK-S12ZVH128 S12ZVH128 16-bit com/TRK-S12ZVH128 J37 transistor

    phoenix contact 24v 8 channel Relay

    Abstract: EM336 R232C D-Sub 9-pin female Connector D-SUB 9 PIN feMALE CONNECTOR C0-C255 EM3360 32-POINT EM-336 EM345-0
    Text: Programmable Logic Controllers ONC Series OpenNet Controller FC3A-CP2K FC3A-CP2S OpenNet Controller Flash memory card ready with memory card connector •Digital I/O - 8, 16, and 32 point cards - 224 inputs and outputs, 480 with expansion power supply •Analog I/O


    Original     		PDF 4-20mA RS232 RS485 10kHz, 16-bit 262-IDEC 317-IDEC phoenix contact 24v 8 channel Relay EM336 R232C D-Sub 9-pin female Connector D-SUB 9 PIN feMALE CONNECTOR C0-C255 EM3360 32-POINT EM-336 EM345-0

    MC9S12ZVMC12

    Abstract: resolver sensor S12ZVML12EVBQSG MC9S12ZVM
    Text: Freescale Semiconductor User's Guide Document Number:MC9S12ZVM128MCBUG Rev 1, 07/2013 S12ZVM12EVB Evaluation Board User Guide Contents 1 Introduction The S12ZVMx12EVB board is designed to drive 3-phase BLDC or PMSM motors, enabling implementation of motor


    Original     		PDF MC9S12ZVM128MCBUG S12ZVM12EVB S12ZVMx12EVB S12ZVM, 16-bit MC9S12ZVMC12 resolver sensor S12ZVML12EVBQSG MC9S12ZVM

    b6 smd sot23 transistor

    Abstract: smd transistor a4 3pin transistor smd 2x6 TRANSISTOR ML SMD SMD TRANSISTOR B13 a6 smd transistor N channel MOSFET smd transistor A6 WM8772-EV2 b14 smd diode TRANSISTOR ML 13 SMD
    Text: w WM8772-EV2M WM8772 28-pin SSOP Evaluation Board User Handbook INTRODUCTION The WM8772 is a 24-bit, 192kHz 6-Channel CODEC. This evaluation platform and documentation should be used in conjunction with the latest version of the WM8772 datasheet. The datasheet gives device functionality information as well as timing and


    Original     		PDF WM8772-EV2M WM8772 28-pin WM8772 24-bit, 192kHz WM8772. WM8772-EV1B b6 smd sot23 transistor smd transistor a4 3pin transistor smd 2x6 TRANSISTOR ML SMD SMD TRANSISTOR B13 a6 smd transistor N channel MOSFET smd transistor A6 WM8772-EV2 b14 smd diode TRANSISTOR ML 13 SMD

    J22 transistor

    Abstract: b6 smd sot23 transistor AES/EBU transceiver c86 sot23 TRANSISTOR c104 transisTOR C124 WM8772 WM8772-EV2M CS8427 smd pnp A4 L
    Text: w WM8772-EV2M WM8772 28-pin SSOP Evaluation Board User Handbook INTRODUCTION The WM8772 is a 24-bit, 192kHz 6-Channel CODEC. This evaluation platform and documentation should be used in conjunction with the latest version of the WM8772 datasheet. The datasheet gives device functionality information as well as timing and


    Original     		PDF WM8772-EV2M WM8772 28-pin WM8772 24-bit, 192kHz WM8772. WM8772-EV1B J22 transistor b6 smd sot23 transistor AES/EBU transceiver c86 sot23 TRANSISTOR c104 transisTOR C124 WM8772-EV2M CS8427 smd pnp A4 L

    2N2222A TO-92

    Abstract: RL201054 12V FAN CONTROL BY USING THERMISTOR 2n2222a to 92 MIC502 TP4A 2N2222A TO-92 npn 5V FAN CONTROL BY USING THERMISTOR 1K-138-D1 2N2222
    Text: MIC502 Evaluation Board Micrel MIC502 Evaluation Board Fan Management IC The evaluation/demonstration board schematic is shown in Figure 3. The demonstration portion of this board consists of header J2 and those components to its right. The board is designed so it can be cut in two immediately to the left of this


    Original     		PDF MIC502 preferreIC502 2N2222A TO-92 RL201054 12V FAN CONTROL BY USING THERMISTOR 2n2222a to 92 TP4A 2N2222A TO-92 npn 5V FAN CONTROL BY USING THERMISTOR 1K-138-D1 2N2222

    2N3906

    Abstract: CMOD232 GRM188R71C104KA01 MAX6639 MAX6639AEE MAX6640 MAX6640EVCMOD2 MAX6640EVKIT
    Text: 19-3422; Rev 1; 6/05 MAX6640 Evaluation System/Evaluation Kit The MAX6640 evaluation kit EV kit is an assembled and tested PC board with a mounted MAX6640. The EV kit allows full evaluation of the MAX6640 dual temperature sensor/fan controller. The MAX6640 monitors its own die


    Original     		PDF MAX6640 MAX6640. 11-bit 2N3906) MAX6639/MAX6640 2N3906 CMOD232 GRM188R71C104KA01 MAX6639 MAX6639AEE MAX6640EVCMOD2 MAX6640EVKIT

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    bcw 918

    Abstract: SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115
    Text: micropackaged devices microboitiers ^ général purpose and switching transistor selector guide guide de sélection-transistors de commutation et usage général THOMSON-CSF Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221


    OCR Scan     		PDF O-236 bcw 918 SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


    OCR Scan     		PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922

    THJU406

    Abstract: NJ132 THJ2608 THJ2609 THJU1897 THJU1898 THJU1899 THJU404 THJU405 THJ5461
    Text: AL L EGRO MI C R OS Y S T E MS 8514019 SPRAGUE. I NC 13 ]> • 05DM33Ö 00035Ö 3 SEM ICONDS/ IC S 93D 7 ■ ALGR 03583 JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g s oH V(BH)GSS Min. (V) TH JU 404 TH JU 405


    OCR Scan     		PDF 05DM33Ã THJU404 NJ35D THJU405 THJU406 THJ5114 THJ5115 THJ5116 THJ5460 NJ132 THJ2608 THJ2609 THJU1897 THJU1898 THJU1899 THJ5461

    MLED-1500P3C

    Abstract: 20/MLED-2300P3C
    Text: INFRA-RED EMITTERS ABSOLUTE MAXIMUM RATINGS ITEM Ta = 25 5C MAXIMUM RATING UNIT MLED-430QF3C/MLED-4300SF4C WATER CLEAR LENS Power Dissipation Pd 100 mW MLED-4300F3T50/MLED-4300SF4T50 BLUE TRANSPARENT LENS Forward Current If 50 mA Peak Forward Current Ip


    OCR Scan     		PDF LED-430Q D-43Q0SF4C MLED-4300F3T50/MLED-4300SF4T50 LED4300F3C/M LED4300F3T50 D-4300PG4C/M LED-43QQSF4T50 940nm MLEWITC-1300 UL94V-0 MLED-1500P3C 20/MLED-2300P3C

    TRIAC RCA ca3058

    Abstract: rca ca3240E CA311G CA101AT CA124G sn76013 CA1310 CA555CG Fuji Electric tv schematic diagram 40468A
    Text: RCA Linear Integrated Circuits This DATABOOK contains complete technical information on the full line of RCA standard commercial linear in­ tegrated circuits and MOS field-effect transistors for both industrial and con­ sumer applications. An Index to Devices provides a complete listing of


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    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


    OCR Scan     		PDF