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    TRANSISTOR ITT 108 Search Results

    TRANSISTOR ITT 108 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ITT 108 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rf ic e51

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT £ A N D IE i= i 2= i — PART NUMBER OCP-PCT124/A -T R TOP VIEW MARK REV. REV, A B C NOTES: 1. ANODE/CATHDDE 4 E.C.N. E.C.N. E.C.N. E.C.N. c NUMBER AND REVISION COMMENTS #10BRDR. & # 1 0 7 7 6 . #10815. #10894. DATE 6.16.01 1 2.3.01


    OCR Scan     		PDF OCP-PCT124/A-TR DECL45URE rf ic e51

    Bi 3101 A

    Abstract: transistor ITT 108 MMBT3904
    Text: MMBT3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor MMBT3904 is recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter. Marking code 3N SOT-23 Plastic Package Weight approx. 0.008 g


    OCR Scan     		PDF MMBT3906 MMBT3904 OT-23 Bi 3101 A transistor ITT 108

    T02I

    Abstract: 0040II
    Text: UNCONTROLLED DOCUMENT REV, A B PART NUMBER REV. 0CP-PCT4116/E-TR B E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & #10776. E.C.N. #10815. DATE 6.16.01 12.6.01 RECOMMENDED SOLDER PAD LAYOUT TOP VIEW 2 .5 4 E0.1003 <7 PLS, L 1.90 [0 .07 5 ] _ P <2 PLS.)


    OCR Scan     		PDF OCP-PCT4116/E-TR 10BRDR. T02I 0040II

    Untitled

    Abstract: No abstract text available
    Text: KS621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S in g /S D d rH n Q tO fl Transistor Module 200 Amperes/1000 Volts OU TLIN E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621K20 Amperes/1000

    Untitled

    Abstract: No abstract text available
    Text: WVUEREX KD221K75 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U 3 l D d rH n Q tO n Transistor Module 75 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor M odules are high power devices designed for use


    OCR Scan     		PDF KD221K75 Amperes/1000

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT REV, PART NUMBER REV. OCP-PCT4116/E-TR c E.C.N. A NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & DATE #10776. 6.16.01 B E.C.N. #10815. 12.6.01 C E.C.N. #11148. 5,16.07 TOP VIEW RECOMMENDED SOLDER PAD LAYOUT i r L 2.54 [ 0.100] 7 PLS.


    OCR Scan     		PDF OCP-PCT4116/E-TR 10BRDR.

    2sa1757 transistor

    Abstract: A1757 2SA series transistor ITT 108 2sa1757
    Text: 2SA1757 Transistor, PNP Features Dimensions Units : mm • available In TO-220FP (SC-67) package • high speed switching, typically t{ = 0.15 jas at lc = - 3 A • low collector saturation voltage, typically VCE(sat) = -0.2 V at lC/ lB = -3 A/-0.15 A •


    OCR Scan     		PDF 2SA1757 O-220FP SC-67) O-22QFP) 2SC4596 2sa1757 transistor A1757 2SA series transistor ITT 108 2sa1757

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT A N D IE MARK TOP VIEW REV, A B NOTES: 1 cf ib a 1 1.3, ANODE/CATHODE 2 cf Ï3 7 2 2.4. CATHODE/ANODE 3 cf 3= 6 3 4 ci 5 4 2 O CP -PCT 228/A -T R B E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #10BRDR. & #10776. E.C.N. #10815. 6.8. COLLECTOR


    OCR Scan     		PDF 228/A 10BRDR.

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK I N C Q 2GE D avantek im n tb AT-00570 ' Up to 4 GHz General Purpose Silicon Bipolar Transistor _ Avantek 70 mil Package Features • • • • • QDGfci4H3 3 16.0 dBm typical Pi dB at 2.0 GHz 11.5 dB typical Gi dB at 2.0 GHz 2.5 dB typical NF0 at 2.0 GHz


    OCR Scan     		PDF AT-00570

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    50D0

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT A N D IE MARK TOP VIEW 1ct 2 cf ï= 5 3 c i ì= 4 Ì K REV, A B C NOTES: 1. ANODE CATHODE NO CONNECT EMITTER COLLECTOR BASE PART NUMBER REV. O C P -P C T B 1 1 6 / E —TR c E.C.N. E.C.N. E.C.N. E.C.N. NUMBER AND REVISION COMMENTS #10BRDR. & #10776.


    OCR Scan     		PDF 10BRDR. 50D0

    itt ol 170

    Abstract: No abstract text available
    Text: Edition May 15, 1997 6251-437-1PD ITT INTERMETALL 4bflE711 0 0 0 b S 7 b 234 VDP 31xxB PRELIMINARY DATA SHEET Contents Page Section Title 5 6 1. 1.1. Introduction VDP Applications 9 10 10 11 11 11 11 11 11 12 12 13 13 13 14 15 15 15 16 17 17 17 17 18 18 18


    OCR Scan     		PDF 6251-437-1PD 4bflE711 31xxB itt ol 170

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in ­


    OCR Scan     		PDF b3b72SH 2N6166

    BFR91 philips

    Abstract: No abstract text available
    Text: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The


    OCR Scan     		PDF bbS3T31 BFR93 ON4186) BFT93. BFR91 philips

    Triac SC141D

    Abstract: Opto triac ot 195 schematic diagram inverter 2000w schematic diagram power inverter 1500w 12v 1200W DC POWER SUPPLY SCHEMATIC scr 106d st4 diac solar tracking street light system schematic diagram of 2000W induction heater 400W sine wave inverter circuit diagram
    Text: OPTOELECTRONIC CIRCUITS LIGHT DETECTING CIRCUITS L ight detecting circuits are those circuits that cause an action based on the level o f light received by the photo detector. OFF RELAY: 12V , Q.3A COIL: 2 0 A , FORM C. CONTACTS OR SOLID-STATE SW ITCHING OF 16A STEADY-STATE 1 BOA COLD


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    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT REV, PART NUMBER REV. 0 C P - P C T 4 1 1 6 /E - T R B E.C.N. NUMBER AND REVISION COMMENTS A B E.C.N. #10BRDR. & #10776. E.C.N. #10815. DATE 6.16.01 12.6.01 RECOMMENDED SOLDER PAD LAYOUT TOP VIEW 2.54 E0.1003 <7 PLS, L 1.90 [0.075] _ P


    OCR Scan     		PDF 10BRDR. PRECI90N P-PCT41

    transistor JE 1090

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF PHP20N06E PHX15N06E OT186A transistor JE 1090

    VPC3200A

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET DDP 3300 A Single-Chip Display and Deflection Processor Edition June 19,1996 6251-421-1PD ITT INTERMETALL Mbfl2711 OODbüflfl 441 DDP 3300 A PRELIMINARY DATASHEET Contents Page Section Title 4 4 5 6 6 6 6 1. 1.1. 1.2. 1.3. 1.3.1. 1.3.2.


    OCR Scan     		PDF 6251-421-1PD Mbfl2711 4bfi2711 VPC3200A

    SCR induction furnace circuit diagram

    Abstract: schematic diagram power inverter 1500w schematic diagram inverter 2000w 1200W inverter "circuit diagram" sc146d Triac cross reference scr 106d 12v to 220v inverter schematic diagram 2000w 220v DC MOTOR SPEED CONTROLLER using opto coupler 12 volt dc to 220v ac inverter 1500w schematic diagram solar tracker circuits
    Text: OPTOELECTRONIC CIRCUITS LIGHT DETECTING CIRCUITS L ight detecting circuits are those circuits that cause an action based on the level o f light received by the photo detector. OFF RELAY: 12V , 0 .3 A COIL: 2 0 A , FORM C. CONTACTS OR SOLID-STATE SW ITCHING OF 16A STEADY-STATE 150 A COLD


    OCR Scan     		PDF

    2SK49

    Abstract: JA BJT P514 t430 transistor transistor T600 p745 h me 218l p745 Transistor F030 P460
    Text: NEC j m ^ T ix t x J u n c t io n Field E ffe ct T r a n s is t o r A 2SK49 N-Channel Silicon Junction Field Effect Transistor FM Tuner *1- ° i&MM'SLtë.ÿji'P-y V t f í O F M f ^ - B 0 / P A C K A G E DIM ENSIO NS Unit : mm O |yfs| ^ § ^ o I y fs I = 2 . 8 m ü T Y P . ( V d s = 5 . 0 V ,


    OCR Scan     		PDF SC-43 2SK49 JA BJT P514 t430 transistor transistor T600 p745 h me 218l p745 Transistor F030 P460

    ac cdi schematic diagram

    Abstract: dc cdi schematic diagram cdi schematic cdi circuit diagram California Devices cdi schematics equivalent transistor bc 107 off grid inverter schematics cdi wiring diagram "california devices"
    Text: cl o cot S '/ t ó CALIFORNIA DEVICES INC. /¿vi o^ f DLM SERIES HCMOS Gate Arrays 000935 April 1985 PRODUCT FEATURES DLM SERIES FAMILY ORGANIZATION ^ • High perform anc^ 3 ^ ^ silicon gate HC^MOSJechnology. P art N um ber ■ From 210 to 10,152 equivalent 2-input gates.


    OCR Scan     		PDF pi880 D-6050 5M85/Printed ac cdi schematic diagram dc cdi schematic diagram cdi schematic cdi circuit diagram California Devices cdi schematics equivalent transistor bc 107 off grid inverter schematics cdi wiring diagram "california devices"

    5Bp smd transistor data

    Abstract: 5Bp smd TRANSISTOR SMD 2X y CK 158 SMD WL18 TRANSISTOR SMD 2X K 100CLCC cmos based on tanner tools operation of sr latch using nor gates TRANSISTOR SMD 2X 7
    Text: Order this data sheet by HDCM IL/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military HDC Series HDC Series CMOS Arrays High Performance Triple Layer Metal 1.0 Micron CMOS Arrays Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a


    OCR Scan     		PDF

    transistor BC-108

    Abstract: dog 53 DIODE BZ TRANSISTOR BC 109 VEB Kombinat DIODE BZP DIODE BZp 6870 service-mitteilungen Stern Radio OA625
    Text: SERV IC E-M ITT EILU N G EN VEB IN DUSTRIEVERTRIEB RU ND FU NK UND FE RN SE H EN GSMi ra d io - television AUSGABE: 7/73 DATUM: Juni 1973 Neue Import - Geräte Kassetten-Tonbandgerät " M£ - 25 " Dae Gerät wird aus der VR Ungarn importiert und befindet sich ab


    OCR Scan     		PDF 68x200x235 53-cm-G III/18/379 transistor BC-108 dog 53 DIODE BZ TRANSISTOR BC 109 VEB Kombinat DIODE BZP DIODE BZp 6870 service-mitteilungen Stern Radio OA625

    F 3010012

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT A N D IE MARK TOP VIEW REV, A B C NOTES: 1 cf ib a 1 1.3, ANODE/CATHODE 2 cf Ï3 7 2 2.4. CATHODE/ANODE 3 cf 3= 6 3 4 ci 5 4 2 OCP-PCT228 / A - T R c E.C.N. E.C.N, E.C.N. E.C.N. 6.8. COLLECTOR 9.É.8 CO.381] 3,50 [0,138] NUMBER AND REVISION COMMENTS


    OCR Scan     		PDF OCP-PCT228/A-TR 10BRDR. F 3010012