IRF530N
Abstract: IRF530N applications
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF530N SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 17 A g RDS ON ≤ 110 mΩ
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IRF530N
O220AB)
IRF530N
IRF530N applications
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Untitled
Abstract: No abstract text available
Text: IRF530 Product Preview TMOS E−FET. Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with a fast
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IRF530
IRF530/D
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AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.16 W This advanced TMOS power FET is designed to withstand high
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IRF530/D
IRF530
AN569
IRF530
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IRF530FP
Abstract: No abstract text available
Text: IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.16 Ω 10 A TYPICAL RDS(on) = 0.12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY
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IRF530FP
100oC
175oC
O-220FP
IRF530FP
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AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high
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IRF530/D
IRF530
AN569
IRF530
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IRF530FP
Abstract: OT 306 IRF 950
Text: IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF 530FP • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.16 Ω 10 A TYPICAL RDS(on) = 0.12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY
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IRF530FP
530FP
100oC
175oC
O-220FP
IRF530FP
OT 306
IRF 950
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IRF530
Abstract: transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530
Text: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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IRF530
IRF530FI
IRF530F
100oC
175oC
O-220
O-220FI
IRF530
transistor irf530
IRF530FI
IRF530 application
O-220F
transistor irf 130
O220F
tr irf530
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IRF530
Abstract: IRF530 IRF530FI IRF530F DATA SHEET OF IRF530 IRF530FI equivalent IRF530FI transistor irf530 tr irf530
Text: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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IRF530
IRF530FI
IRF530F
100oC
175oC
O-220
ISOWATT220
IRF530
IRF530 IRF530FI
DATA SHEET OF IRF530
IRF530FI equivalent
IRF530FI
transistor irf530
tr irf530
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Untitled
Abstract: No abstract text available
Text: PD - 95788 IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies
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IRG4BC40WSPbF
IRG4BC40WLPbF
EIA-418.
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Untitled
Abstract: No abstract text available
Text: PD - 95861 IRG4BC40WS IRG4BC40WL INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies
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IRG4BC40WS
IRG4BC40WL
EIA-418.
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Untitled
Abstract: No abstract text available
Text: PD - 95782 IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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IRG4BC20W-SPbF
150kHz
EIA-418.
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IRF530S
Abstract: No abstract text available
Text: PD - 95782 IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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IRG4BC20W-SPbF
150kHz
EIA-418.
IRF530S
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Transistor BC 457
Abstract: bc 457 3000 0442 bc 457 datasheet IRF530S IRG4BC40WL IRG4BC40WS IRL3103L DSA0031076
Text: PD - 95861 IRG4BC40WS IRG4BC40WL INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies
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IRG4BC40WS
IRG4BC40WL
EIA-418.
Transistor BC 457
bc 457
3000 0442
bc 457 datasheet
IRF530S
IRG4BC40WL
IRG4BC40WS
IRL3103L
DSA0031076
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IRF530S
Abstract: IRG4BC40WL IRG4BC40WS IRL3103L
Text: PD - 95861 IRG4BC40WS IRG4BC40WL INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies
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IRG4BC40WS
IRG4BC40WL
topologie0145)
EIA-418.
IRF530S
IRG4BC40WL
IRG4BC40WS
IRL3103L
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Schottky diode TO220 15A 1000V
Abstract: smd transistor c011 diode matrix rom LM317 DIP PACK transistor SMD 5kw smd L272 bdx54 smd LM317 SMD smps power supply 1500w amp TRANSIL DIODE smd
Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 Function High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series
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ULN2003A
ULN2064B
ULN2068B
ULN2074B
L702N/A
L6221AS
L9222
BDX53
BDX54
BDW93
Schottky diode TO220 15A 1000V
smd transistor c011
diode matrix rom
LM317 DIP PACK
transistor SMD 5kw
smd L272
bdx54 smd
LM317 SMD
smps power supply 1500w amp
TRANSIL DIODE smd
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A12Q
Abstract: No abstract text available
Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.
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95229B
IRGB6B60KDPbF
IRGS6B60KDPbF
IRGSL6B60KDPbF
O-220AB
O-262
A12Q
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Untitled
Abstract: No abstract text available
Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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4925A
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
O-220AB
IRGB10B60KD
IRGS10B60KD
O-262
IRGSL10B60KD
AN-994.
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transistor irf 647
Abstract: transistor IRF 531 transistor irf 064 irf 570 p570
Text: MOTOROLA IRF530 IRF531 IRF532 IRFS33 SEMICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These T M O S Power FETs are designed for low voltage, high speed power switching applications such as switching regulators,
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IRF530
IRF531
IRF532
IRFS33
IRF533
transistor irf 647
transistor IRF 531
transistor irf 064
irf 570
p570
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D84DL2
Abstract: IRF530 N-Channel fet
Text: IRF530,531 D84DL2,K2 Ftrnr HELD EFFECT POWER TRANSISTOR 114.0 AMPERES 100, 60 VOLTS R[ S ON) = 0.18 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
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IRF530
D84DL2
100ms
TC-25Â
IRF530/D84DL2
IRF531/D84DK2
N-Channel fet
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Untitled
Abstract: No abstract text available
Text: Zjï SGS-THOMSON ¡ILIOTI^OKinei IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP V d s s 100 V R d S o ii < 0.16 a Id 10 A . TYPICAL RDs(on) =0.12 £2 . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . LOW GATE CHARGE
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IRF530FP
100lse
O-22QFP
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irf530
Abstract: transistor sec 623
Text: Tem ic IRF530 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) 100 r DS(on) (Q) 0.18 I d (A) 14 TO -220AB o DRAIN connected to TAB Ô GD S s lop View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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-220AB
IRF530
P-36852--Rev.
IRF530_
irf530
transistor sec 623
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IR F530 TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy
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IRF530/D
21A-09
O-220AB)
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Untitled
Abstract: No abstract text available
Text: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IR F 530 IR F 5 3 0 F I . . . . . . . . V d ss R d S o ii 100 V 100 V < 0.1 6 Q. < 0.1 6 Q. Id 16 11 A A TYPICAL RDs(on) =0.12 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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IRF530
IRF530FI
IRF530/FI
ISQWATT220
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diode U3j
Abstract: IRf 447 MOSFET 1RF530 1rf5305 a7x transistor IRF532 MOSFET IRF 531 motorola diode u3j aaBO ON U3J
Text: MOTOROLA SC MOTOROLA XST RS/R F IM E D I b3b?aSM O OÔ ÎbôS 4 IRF530 1RF531 IRF532 IRF533 •I SEM ICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM OS POWER FIELD EFFECT TRANSISTOR These T M O S Pow er FETs are d esign ed for low voltage, high
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IRF530
IRF531
IRF532
IRF533
O-220)
diode U3j
IRf 447 MOSFET
1RF530
1rf5305
a7x transistor
MOSFET IRF 531
motorola diode u3j
aaBO
ON U3J
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