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    TRANSISTOR IC 1A Search Results

    TRANSISTOR IC 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3127MZ Rochester Electronics CA3127 - Transistor Array Visit Rochester Electronics Buy

    TRANSISTOR IC 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA V 7 V V(BR)CEO IC=10mA 800min IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat)


    Original     		PDF 2SC3678 100max 800min 50typ MT-100

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A


    Original     		PDF ZXTC4591AMC ZXTD4591AM832 D-81541

    TO220 HEATSINK DATASHEET

    Abstract: 2SC5239 ATV3 transistor 800V 1A
    Text: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Ratings Unit ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 VEBO IC Symbol 10.2±0.2


    Original     		PDF 2SC5239 MT-25 100max 550min 300mA TO220 HEATSINK DATASHEET 2SC5239 ATV3 transistor 800V 1A

    2SC3678

    Abstract: No abstract text available
    Text: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A


    Original     		PDF 2SC3678 100max 800min 50typ 400mA 500mA MT-100 2SC3678

    2SC4517

    Abstract: 4517A transistor 800V 1A 2sc4517a
    Text: 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 2SC4517 2SC4517A 10.1±0.2


    Original     		PDF 2SC4517/4517A 2SC4517 2SC4517A O220F) 100max 550min 35typ 4517A transistor 800V 1A

    diode RU 3AM

    Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
    Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)


    Original     		PDF

    ZETEX complementary transistor PRODUCT LINE

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A


    Original     		PDF ZXTC4591AMC ZXTD4591AM832 D-81541 ZETEX complementary transistor PRODUCT LINE

    2SC4299

    Abstract: No abstract text available
    Text: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max


    Original     		PDF 2SC4299 FM100 100max 800min 50typ 2SC4299

    vbe 12v, vce 600v NPN Transistor

    Abstract: 2SC3831
    Text: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max


    Original     		PDF 2SC3831 Pulse20) 100max 500min 105typ MT-100 vbe 12v, vce 600v NPN Transistor 2SC3831

    4517A

    Abstract: 2sc4517 2SC4517A FM20
    Text: 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 10.1±0.2 IB 1.5 A VCE(sat)


    Original     		PDF 2SC4517/4517A 100max 550min O220F) 35typ 300mA 2SC4517 2SC4517A 4517A 2SC4517A FM20

    2SC4299

    Abstract: No abstract text available
    Text: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max


    Original     		PDF 2SC4299 FM100 100max 800min 50typ 2SC4299

    2SC3831

    Abstract: vbe 12v, vce 600v NPN Transistor transistor npn 12V 1A Collector Current
    Text: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor VCB=600V VCEO 500 V IEBO VEB=10V 10 V V(BR)CEO 10(Pulse20) A hFE mA 100max µA IC=25mA 500min V VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max


    Original     		PDF 2SC3831 Pulse20) 100max 500min 105typ MT-100 2SC3831 vbe 12v, vce 600v NPN Transistor transistor npn 12V 1A Collector Current

    2SC3927

    Abstract: DSA0016508
    Text: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 5 A VCE(sat) IC=5A, IB=1A 0.5max PC


    Original     		PDF 2SC3927 MT-100 100max 550min Pulse15) 105typ 2SC3927 DSA0016508

    pnp npn dual emitter connected

    Abstract: ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA
    Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A Description Packaged in the 3mm x 2mm MLP Micro Leaded


    Original     		PDF ZXTD4591AM832 D-81541 pnp npn dual emitter connected ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA

    2SC5249

    Abstract: FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor
    Text: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A


    Original     		PDF 2SC5249 50typ 19max 600min 100max O220F) 2SC5249 FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor

    2SC5239

    Abstract: No abstract text available
    Text: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 550 VEBO IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 50(Tc=25°C)


    Original     		PDF 2SC5239 100max 550min 35typ 300mA MT-25 2SC5239

    2SC4557

    Abstract: No abstract text available
    Text: 2SC4557 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 28 A VCE(sat) IC=5A, IB=1A 0.5max 80(Tc=25°C)


    Original     		PDF 2SC4557 100max 550min Pulse20) 105typ FM100 2SC4557

    2SC4296

    Abstract: No abstract text available
    Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max


    Original     		PDF 2SC4296 Pulse20) 400min 10typ 85typ 100max FM100 2SC4296

    RTGN14BAP

    Abstract: 4503 swithing rtgn14
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN14BAP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN14BAP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R2=10kΩ） ● High collector current IC=1A


    Original     		PDF RTGN14BAP RTGN14BAP 4503 swithing rtgn14

    2SC4296

    Abstract: No abstract text available
    Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max


    Original     		PDF 2SC4296 Pulse20) 400min 10typ 85typ 100max FM100 2SC4296

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 OT-89 2SB1260L 2SB1260-AB3-R 2SB1260L-AB3-R OT-89 QW-R208-017

    transistor 1012 TO252

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T 2SB1260L-x-TN3-T OT-89 transistor 1012 TO252

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.  FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.


    Original     		PDF 2SB1260 2SB1260 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R OT-89 O-252 QW-R208-017

    NPN Transistor VCEO 80V 100V

    Abstract: 2SD1733 NPN Transistor VCEO 80V 100V hfe 100
    Text: Transistors SMD Type Power Transistor 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A DC . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15


    Original     		PDF 2SD1733 O-252 500mA -50mA, 100MHz NPN Transistor VCEO 80V 100V 2SD1733 NPN Transistor VCEO 80V 100V hfe 100