ic SE 135
Abstract: No abstract text available
Text: Power Transistor 2SA1567 Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat) fT COB Ratings –100max –100max –50min
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2SA1567
100max
50min
50min
35max
40typ
330typ
ic SE 135
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2SA2007
Abstract: 2SC5526
Text: 2SC5526 Transistors High-speed Switching Transistor 60V, 12A 2SC5526 !External dimensions (Units: mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.15V at IC / IB = 6A / 0.3A) 2) High switching speed. (Typ. tf = 0.1µs at Ic = 6A) 3) Wide SOA. (safe operating area)
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2SC5526
2SA2007.
O-220FN
30MHz
2SA2007
2SC5526
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2sd1240
Abstract: 2SB924
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB924 DESCRIPTION •High Collector Current: IC= -25A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -12A ·Complement to Type 2SD1240 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications.
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2SB924
2SD1240
2sd1240
2SB924
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IC 630
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •
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ZXTC6717MC
100mV
-140mV
DS31926
IC 630
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Untitled
Abstract: No abstract text available
Text: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive
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IRGS4620DPbF
IRGB4620DPbF
IRGP4620D
IRGP4620DPbF
O-247AC
O-220AC
IRGP4620D-EPbF
O-247AD
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2SA1744
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1744 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -3A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A)
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2SA1744
2SA1744
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2SA1513
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1513 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High Currrent Capacity ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -12A APPLICATIONS
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2SA1513
-50mA
2SA1513
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IC 630
Abstract: marking DA1
Text: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance
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ZXTC6717MC
100mV
-140mV
DS31926
IC 630
marking DA1
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Untitled
Abstract: No abstract text available
Text: IRGP6640DPbF IRGP6640D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 40A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6640DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 24A n-channel
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IRGP6640DPbF
IRGP6640D-EPbF
IRGP6640DPbFÂ
247ACÂ
IRGP6640Dâ
247ADÂ
IRGP6640DPbF/IRGP6640D-EPbF
JESD47F)
O-247AC
O-247AD
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Untitled
Abstract: No abstract text available
Text: Transistors IC Transistor SMD Type Product specification FMMT617TA SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Power Dissipation: Ptot=625mW 1 0.55 • Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 ● Collector Current: IC=3A
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FMMT617TA
OT-23
625mW
200mA,
50MHz
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P12IE95F4
Abstract: STP12IE95F4 JESD97
Text: STP12IE95F4 Emitter Switched Bipolar Transistor ESBT 950 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz
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STP12IE95F4
O220FP-4L
STP12IE95F4
P12IE95F4
JESD97
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emitter switched bipolar transistor
Abstract: C12IE90HV JESD97 STC12IE90HV
Text: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz
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STC12IE90HV
O247-4L
STC12IE90HV
emitter switched bipolar transistor
C12IE90HV
JESD97
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TRANSISTOR k 744
Abstract: BUX24 BUX 24 Transistor 744 transistor et 460
Text: *B U X 2 4 NPN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M ESA T R A N S IS T O R S IL IC IU M NPN, M E S A T R IP L E D IF F U S E ^Preferred device D isp o sitif recom m andé High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant
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BUX24
CB-159
TRANSISTOR k 744
BUX24
BUX 24
Transistor 744
transistor et 460
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transistor BUX 48
Abstract: transistor bux 39 BUX 39 BUX39 bux c tca 761
Text: *BUX39 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA TR A N S IS T O R S IL IC IU M NPN, M ESA T R IP L E D IF F U S E ^ P r e fe rr e d device • D is p o s itif re co m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, f o r t c o u ra n t
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BUX39
CB-19
transistor BUX 48
transistor bux 39
BUX 39
BUX39
bux c
tca 761
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AUIRGP4062D1
Abstract: Fast Recovery Rectifier, 300V .47 j 100 auirgp4062
Text: PD - 96437 AUTOMOTIVE GRADE AUIRGP4062D1 AUIRGP4062D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • IC Nominal = 24A Low VCE (on) Trench IGBT Technology Low Switching Losses
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AUIRGP4062D1
AUIRGP4062D1-E
Fast Recovery Rectifier, 300V
.47 j 100
auirgp4062
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MLP832
Abstract: ZXTDAM832 ZXTDAM832TA ZXTDAM832TC
Text: ZXTDAM832 MPPS Miniature Package Power Solutions DUAL 15V NPN LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 45m ; IC= 4.5A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual transistors offer
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ZXTDAM832
MLP832
ZXTDAM832
ZXTDAM832TA
ZXTDAM832TC
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AUGP4062D
Abstract: AUIRGP4062D AUGP4062D-E
Text: PD - 96353A AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 24A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA
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6353A
AUIRGP4062D
AUIRGP4062D-E
O-247AC
AUGP4062D
AUGP4062D-E
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2SK3918
Abstract: *K3918 SMD transistor Mu SMD TRANSISTOR 12a 2SK3918 equivalent
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3918 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 5 V drive available 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1
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2SK3918
O-252
Po12A
2SK3918
*K3918
SMD transistor Mu
SMD TRANSISTOR 12a
2SK3918 equivalent
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npn smd 3a
Abstract: FMMT617TA ic3a
Text: Transistors SMD Type NPN Silicon Power Transistor FMMT617TA SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Power Dissipation: Ptot=625mW 1 0.55 • Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 ● Collector Current: IC=3A
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FMMT617TA
OT-23
625mW
200mA,
50MHz
npn smd 3a
FMMT617TA
ic3a
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diode SS 3
Abstract: No abstract text available
Text: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
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2SK2699
diode SS 3
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2N7085
Abstract: No abstract text available
Text: Tem ic 2N7085 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) 100 r DS(on) (ß ) 0.075 I d (A) 20 TO-2S7AB H erm etic Package o Case Isolated Ô G D S Top View s N-Channel M OSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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2N7085
P-36736--Rev.
2N7085
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BUW62
Abstract: NPN 400V 40A LE17 TSLA Scans-007954
Text: SEMELAB 8133167 ÜOOOSOS 3 H S M L B 37E D LTD SEMELAB JUL 0 6 1983 BUW 62 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitablefor applications requiring low saturation voltage and high gain for reduced load operation M E C H A N IC A L D A T A Dim ensions in mm
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-33-/r
BUW62
NPN 400V 40A
LE17
TSLA
Scans-007954
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SK3068 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV] 2SK3068 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-220FL
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2SK3068
O-220FL
100//A
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transistor c 2316
Abstract: IC KA 2312 transistor t8w tm 2312 2SA1022 2SA1030 2SC2292 T10M40F1 T8M40F1 te 2304
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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Tc-25
Tr-25-Cl
250MHz
Te-25
rr-25
transistor c 2316
IC KA 2312
transistor t8w
tm 2312
2SA1022
2SA1030
2SC2292
T10M40F1
T8M40F1
te 2304
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