Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR HIGH VOLTAGE Search Results

    TRANSISTOR HIGH VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR HIGH VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor

    Abstract: transistor mp40 BIPOLAR TRANSISTOR mp25 TRANSISTOR FET 8PIN MP40 SERIES small signal audio FET transistor TO220 MP40 high hfe transistor
    Text: Road map Transistor Package Function / Application Bipolar Transistor Bipolar Transistor MOS FET Low VCE sat Transistor VDSS - ID(DC) (Small Signal MOS FET) High hFE Transistor 4VGate Driven Series Low Voltage, High Speed Switching Transistor 2.5VGate Driven Series


    Original     		PDF X13769XJ2V0CD00 O-126) MP-25 O-220) MP-40 MP-45, MP-45F MP-25 MP-80 transistor transistor mp40 BIPOLAR TRANSISTOR mp25 TRANSISTOR FET 8PIN MP40 SERIES small signal audio FET transistor TO220 MP40 high hfe transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5551 DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMDT5551 MMDT5551 MMDT5551G-AL6-R OT-363 QW-R218-022

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMBT5551 MMBT5551 OT-23 O-236) MMBT5551G-x-AE3-R QW-R206-010.

    High Voltage Switching Transistor

    Abstract: MMDT5551
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5551 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMDT5551 MMDT5551 MMDT5551L-AL6-R MMDT5551G-AL6-R OT-363 QW-R218-022 High Voltage Switching Transistor

    equivalent of 5401 transistor

    Abstract: 5401 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5401 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC 5401 is a high voltage fast-switching dual PNP transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMDT5401 -150V MMDT5401L-AL6-R MMDT5401G-AL6-R OT-363 QW-R218-021 equivalent of 5401 transistor 5401 transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5401 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMDT5401 is a high voltage fast-switching dual PNP transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMDT5401 MMDT5401 -150V MMDT5401G-AL6-R OT-363 QW-R218-021

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 MMBT5551-x-AE3-R QW-R206-010

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010.

    MJE13009d

    Abstract: 1A 300V TRANSISTOR MJE13009-D
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability.


    Original     		PDF MJE13009D MJE13009D QW-R203-041 1A 300V TRANSISTOR MJE13009-D

    transistor D4203D

    Abstract: D4203D D4203 d4203d TRANSISTOR QW-R204-026 D4203DL-T60-K to-126 npn switching transistor 400v npn transistor 400V
    Text: UNISONIC TECHNOLOGIES CO., LTD D4203D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC D4203D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high


    Original     		PDF D4203D D4203D QW-R204-026 transistor D4203D D4203 d4203d TRANSISTOR D4203DL-T60-K to-126 npn switching transistor 400v npn transistor 400V

    Untitled

    Abstract: No abstract text available
    Text: NTE228A Silicon NPN Transistor High Voltage Amp, Video Output Description: The NTE228A is a silicon NPN transistor in a TO202M type package designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators.


    Original     		PDF NTE228A NTE228A O202M 600mV 20MHz

    2SA1871

    Abstract: 2sc4942
    Text: DATA SHEET SILICON TRANSISTOR 2SA1871 PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SA1871 is a transistor developed for high-speed high- PACKAGE DRAWING UNIT: mm voltage switching and is ideal for use in switching elements such


    Original     		PDF 2SA1871 2SA1871 2SC4942 C11531E) 2sc4942

    NTE228A

    Abstract: NTE228
    Text: NTE228A Silicon NPN Transistor High Voltage Amp, Video Output Description: The NTE228A is a silicon NPN transistor in a TO202M type package designed for high−voltage TV video and chroma output circuits, high−voltage linear amplifiers, and high−voltage transistor regulators.


    Original     		PDF NTE228A NTE228A O202M 600mV Vol180 20MHz NTE228

    transistor marking 7D

    Abstract: 2SA1871
    Text: DATA SHEET SILICON TRANSISTORS 2SC4942 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC4942 is a transistor developed for high-speed high- PACKAGE DRAWING UNIT: mm voltage switching. This transistor is ideal for use in switching


    Original     		PDF 2SC4942 2SC4942 2SA1871 C11531E) transistor marking 7D 2SA1871

    mje13005d

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		PDF MJE13005D MJE13005D QW-R502-379

    UTC 379

    Abstract: mje13005d transistor MJE13005D ELECTRONIC BALLAST transistor DIAGRAM MJE13005DL-T60-T to-126 npn switching transistor 400v NPN 2A TO 126 MJE13005-D
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		PDF MJE13005D MJE13005D QW-R502-379 UTC 379 transistor MJE13005D ELECTRONIC BALLAST transistor DIAGRAM MJE13005DL-T60-T to-126 npn switching transistor 400v NPN 2A TO 126 MJE13005-D

    mje13005d

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		PDF MJE13005D MJE13005D QW-R502-379.

    nec 620

    Abstract: 2SD1582 hFE transistor high hfe transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SD1582 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and high voltage. This transistor is


    Original     		PDF 2SD1582 2SD1582 nec 620 hFE transistor high hfe transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		PDF MJE13005D MJE13005D QW-R502-379

    2SA1010

    Abstract: nec 2sa1010 2SC2334
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1010 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm voltage high-speed switching, and is ideal for use as a driver in


    Original     		PDF 2SA1010 2SA1010 2SC2334 nec 2sa1010 2SC2334

    MJE13005D

    Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR transistor MJE13005D
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		PDF MJE13005D MJE13005D QW-R502-379. HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR transistor MJE13005D

    to-126 HIGH SPEED SWITCHING transistor

    Abstract: mje13005d free transistor high power NPN 2A TO 126
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		PDF MJE13005D MJE13005D QW-R203-040 to-126 HIGH SPEED SWITCHING transistor free transistor high power NPN 2A TO 126

    transistor BUX

    Abstract: BUX14 TR07
    Text: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection


    OCR Scan     		PDF BUX14 CB-19 transistor BUX BUX14 TR07

    BUX45

    Abstract: transistor et 460
    Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection


    OCR Scan     		PDF CB-19 BUX45 transistor et 460