transistor
Abstract: transistor mp40 BIPOLAR TRANSISTOR mp25 TRANSISTOR FET 8PIN MP40 SERIES small signal audio FET transistor TO220 MP40 high hfe transistor
Text: Road map Transistor Package Function / Application Bipolar Transistor Bipolar Transistor MOS FET Low VCE sat Transistor VDSS - ID(DC) (Small Signal MOS FET) High hFE Transistor 4VGate Driven Series Low Voltage, High Speed Switching Transistor 2.5VGate Driven Series
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X13769XJ2V0CD00
O-126)
MP-25
O-220)
MP-40
MP-45,
MP-45F
MP-25
MP-80
transistor
transistor mp40
BIPOLAR TRANSISTOR
mp25 TRANSISTOR
FET 8PIN
MP40 SERIES
small signal audio FET
transistor TO220
MP40
high hfe transistor
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5551 DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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MMDT5551
MMDT5551
MMDT5551G-AL6-R
OT-363
QW-R218-022
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transistor BUX
Abstract: BUX14 TR07
Text: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection
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BUX14
CB-19
transistor BUX
BUX14
TR07
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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MMBT5551
MMBT5551
OT-23
O-236)
MMBT5551G-x-AE3-R
QW-R206-010.
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High Voltage Switching Transistor
Abstract: MMDT5551
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5551 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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MMDT5551
MMDT5551
MMDT5551L-AL6-R
MMDT5551G-AL6-R
OT-363
QW-R218-022
High Voltage Switching Transistor
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equivalent of 5401 transistor
Abstract: 5401 transistor
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5401 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 5401 is a high voltage fast-switching dual PNP transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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MMDT5401
-150V
MMDT5401L-AL6-R
MMDT5401G-AL6-R
OT-363
QW-R218-021
equivalent of 5401 transistor
5401 transistor
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5401 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMDT5401 is a high voltage fast-switching dual PNP transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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MMDT5401
MMDT5401
-150V
MMDT5401G-AL6-R
OT-363
QW-R218-021
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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MMBT5551
MMBT5551
MMBT5551L-x-AE3-R
MMBT5551G-x-AE3-R
OT-23
MMBT5551-x-AE3-R
QW-R206-010
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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MMBT5551
MMBT5551
MMBT5551L-x-AE3-R
MMBT5551G-x-AE3-R
OT-23
QW-R206-010.
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MJE13009d
Abstract: 1A 300V TRANSISTOR MJE13009-D
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability.
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MJE13009D
MJE13009D
QW-R203-041
1A 300V TRANSISTOR
MJE13009-D
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transistor D4203D
Abstract: D4203D D4203 d4203d TRANSISTOR QW-R204-026 D4203DL-T60-K to-126 npn switching transistor 400v npn transistor 400V
Text: UNISONIC TECHNOLOGIES CO., LTD D4203D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC D4203D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high
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D4203D
D4203D
QW-R204-026
transistor D4203D
D4203
d4203d TRANSISTOR
D4203DL-T60-K
to-126 npn switching transistor 400v
npn transistor 400V
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Untitled
Abstract: No abstract text available
Text: NTE228A Silicon NPN Transistor High Voltage Amp, Video Output Description: The NTE228A is a silicon NPN transistor in a TO202M type package designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators.
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NTE228A
NTE228A
O202M
600mV
20MHz
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2SA1871
Abstract: 2sc4942
Text: DATA SHEET SILICON TRANSISTOR 2SA1871 PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SA1871 is a transistor developed for high-speed high- PACKAGE DRAWING UNIT: mm voltage switching and is ideal for use in switching elements such
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2SA1871
2SA1871
2SC4942
C11531E)
2sc4942
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NTE228A
Abstract: NTE228
Text: NTE228A Silicon NPN Transistor High Voltage Amp, Video Output Description: The NTE228A is a silicon NPN transistor in a TO202M type package designed for high−voltage TV video and chroma output circuits, high−voltage linear amplifiers, and high−voltage transistor regulators.
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NTE228A
NTE228A
O202M
600mV
Vol180
20MHz
NTE228
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide
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STD888
STD888
STD888L-at
QW-R209-028
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mje13005d
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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MJE13005D
MJE13005D
QW-R502-379
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UTC 379
Abstract: mje13005d transistor MJE13005D ELECTRONIC BALLAST transistor DIAGRAM MJE13005DL-T60-T to-126 npn switching transistor 400v NPN 2A TO 126 MJE13005-D
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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MJE13005D
MJE13005D
QW-R502-379
UTC 379
transistor MJE13005D
ELECTRONIC BALLAST transistor DIAGRAM
MJE13005DL-T60-T
to-126 npn switching transistor 400v
NPN 2A TO 126
MJE13005-D
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mje13005d
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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MJE13005D
MJE13005D
QW-R502-379.
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nec 620
Abstract: 2SD1582 hFE transistor high hfe transistor
Text: DATA SHEET SILICON TRANSISTOR 2SD1582 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and high voltage. This transistor is
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2SD1582
2SD1582
nec 620
hFE transistor
high hfe transistor
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BUX45
Abstract: transistor et 460
Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection
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CB-19
BUX45
transistor et 460
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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MJE13005D
MJE13005D
QW-R502-379
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2SA1010
Abstract: nec 2sa1010 2SC2334
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1010 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm voltage high-speed switching, and is ideal for use as a driver in
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2SA1010
2SA1010
2SC2334
nec 2sa1010
2SC2334
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MJE13005D
Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR transistor MJE13005D
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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MJE13005D
MJE13005D
QW-R502-379.
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
transistor MJE13005D
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to-126 HIGH SPEED SWITCHING transistor
Abstract: mje13005d free transistor high power NPN 2A TO 126
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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MJE13005D
MJE13005D
QW-R203-040
to-126 HIGH SPEED SWITCHING transistor
free transistor high power
NPN 2A TO 126
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