Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR HIGH POWER Search Results

    TRANSISTOR HIGH POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR HIGH POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1486

    Abstract: 2SC4342
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM


    Original     		PDF 2SC4342 2SC4342 O-126 D1486

    D1485

    Abstract: 2SA1720
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM


    Original     		PDF 2SA1720 2SA1720 O-220 D1485

    BUTW92

    Abstract: No abstract text available
    Text: BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS ■ DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency


    Original     		PDF BUTW92 O-247 BUTW92

    BUTW92

    Abstract: No abstract text available
    Text: BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: ■ MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency


    Original     		PDF BUTW92 O-247 BUTW92

    2SA1743

    Abstract: C11531E
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is


    Original     		PDF 2SA1743 2SA1743 C11531E

    2SA1742

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal


    Original     		PDF 2SA1742 2SA1742 O-220 O-220)

    2SA1741

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is


    Original     		PDF 2SA1741 2SA1741

    2SC4550

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


    Original     		PDF 2SC4550 2SC4550

    NEC 2sc4552

    Abstract: 2SC4552
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


    Original     		PDF 2SC4552 2SC4552 NEC 2sc4552

    D1316

    Abstract: 2SA1744
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is


    Original     		PDF 2SA1744 2SA1744 D1316

    butw92

    Abstract: No abstract text available
    Text: BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS ■ 3 DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency


    Original     		PDF BUTW92 O-247 butw92

    BUTW92

    Abstract: No abstract text available
    Text: BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS ■ 3 DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency


    Original     		PDF BUTW92 O-247 BUTW92

    2SC4551

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


    Original     		PDF 2SC4551 2SC4551

    darlington transistor for audio power application

    Abstract: 2SA1714 2SC4342 C11531E
    Text: DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for


    Original     		PDF 2SA1714 2SA1714 O-126 2SC4342 C11531E) darlington transistor for audio power application 2SC4342 C11531E

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 MMBT5551-x-AE3-R QW-R206-010

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010.

    2SC4351

    Abstract: No abstract text available
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for


    Original     		PDF 2SC4351 2SC4351

    Vbe 40 transistor

    Abstract: SQD300BA60 600v 10A ultra fast recovery diode diode module 6A darlington power transistor 10a fast recovery diode 1a trr 200ns
    Text: TRANSISTOR MODULE Hi- SQD300BA60 UL;E76102 M SQD300BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is electrically isolated


    Original     		PDF SQD300BA60 E76102 SQD300BA60 200ns) 400mA Vbe 40 transistor 600v 10A ultra fast recovery diode diode module 6A darlington power transistor 10a fast recovery diode 1a trr 200ns

    MJE13009d

    Abstract: 1A 300V TRANSISTOR MJE13009-D
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability.


    Original     		PDF MJE13009D MJE13009D QW-R203-041 1A 300V TRANSISTOR MJE13009-D

    transistor D4203D

    Abstract: D4203D D4203 d4203d TRANSISTOR QW-R204-026 D4203DL-T60-K to-126 npn switching transistor 400v npn transistor 400V
    Text: UNISONIC TECHNOLOGIES CO., LTD D4203D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC D4203D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high


    Original     		PDF D4203D D4203D QW-R204-026 transistor D4203D D4203 d4203d TRANSISTOR D4203DL-T60-K to-126 npn switching transistor 400v npn transistor 400V

    darlington 8A 300V

    Abstract: 300V switching transistor SQD400BA60 M6 transistor
    Text: TRANSISTOR MODULE Hi- SQD400BA60 UL;E76102 M SQD400BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is electrically isolated


    Original     		PDF SQD400BA60 E76102 SQD400BA60 200ns) 530mA darlington 8A 300V 300V switching transistor M6 transistor

    Untitled

    Abstract: No abstract text available
    Text: / = 7 SGS-THOM SOil BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS: . MOTOR CONTROL . HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency


    OCR Scan     		PDF BUTW92

    transistor BUX

    Abstract: BUX14 TR07
    Text: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection


    OCR Scan     		PDF BUX14 CB-19 transistor BUX BUX14 TR07

    TCA 785

    Abstract: transistor BUX 48 vu bux BUX41 sonde de temperature
    Text: *BUX 41N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE îfc Preferred device D isp o sitif recom m andé High speed, high current, high power transistor Transistor de puissance rapide, fo r t courant Thermal fatigue inspection


    OCR Scan     		PDF CB-19 TCA 785 transistor BUX 48 vu bux BUX41 sonde de temperature