P-Channel IGBT
Abstract: No abstract text available
Text: Novel SiC MOS-Bipolar Switches for >10 kV Applications Ranbir Singh GeneSiC Semiconductor Inc. 25050 Riding Plaza, Suite 130-801, South Riding, VA 20152 571-265-7535 ph , 703-373-6918 (fax), ranbir@ieee.org (email). MOS-based gate control is considered a necessity for the applicability of a switch to
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Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Small Signal Transistor Arrays UNA0222 (UN222) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives Unit Collector-base voltage
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UNA0222
UN222)
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PCF7952
Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.
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VP22480-3
VP22480-5
VP22530-2
PCF7952
pcf7944
BGY270
PCF7944AT
ON769
ON961
TDA10086HT
pch7970
PCF7341
OH191
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Untitled
Abstract: No abstract text available
Text: Small Signal Transistor Arrays UNA0228 UN228 Silicon PNP epitaxial planar type (2 elements) Silicon NPN epitaxial planar type (2 elements) Unit: mm For motor drives 0.2+0.1 –0.0 0.4±0.1 9 8 7 6 Parameter Symbol Rating Unit VCBO −12 V Collector-emitter voltage
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UNA0228
UN228)
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Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package Low noise voltage NV High voltage gain GV
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2SK4206G
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TRANSISTOR MARKING ue
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4083G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package Low noise voltage NV High voltage gain GV
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2SK4083G
TRANSISTOR MARKING ue
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3948G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package Low noise voltage NV High voltage gain GV
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2SK3948G
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Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package Low noise voltage NV High voltage gain GV
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2SK3866
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Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3862G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package Low noise voltage NV High voltage gain GV
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2SK3862G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3862 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package Low noise voltage NV High voltage gain GV
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2SK3862
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2SK3866G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package Low noise voltage NV High voltage gain GV
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2SK3866G
2SK3866G
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Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3948 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package Low noise voltage NV High voltage gain GV
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2SK3948
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04534G Silicon NPN epitaxial planar type 高周波増幅用 • Package Two elements incorporated into one package (Each transistor is separated) Reduction of the mounting area and assembly cost by one half
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UP04534G
2SC2404
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TRANSISTOR GB 558
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •
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2SC5013
2SC5013-T1
2SC5013-T2
TRANSISTOR GB 558
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2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
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2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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8206F
Abstract: transistor ge 703 BA8205 BA820 1SS131 B 773 transistor ML8205 BA6565A
Text: BA8206 BA8206F Tone ringer IC for telephone set The BA8206 and BA8206F are tone ringer ICs that generate an amplified tone signal when actuated by a ringing signal. The frequency of the tone can be varied by changing the constants of the external resistances and capacitors. The supply
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BA8206
BA8206F
BA8206F
BA8205,
BA6565A
ML8205
BA8206
8206F
transistor ge 703
BA8205
BA820
1SS131
B 773 transistor
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702 TRANSISTOR
Abstract: 702 P TRANSISTOR MJE700 702 Z TRANSISTOR transistor 702 transistor k 702 BVCEO 2000 TRansistor 701
Text: mr c r i i h a im l MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MO NO LITHIC CONSTRUCTION W ITH BUILT-IN BASE-EMITTER RESISTORS • C o m p le m e n t to M J E 8 0 0 /8 0 1 /8 0 2 /8 0 3 ABSOLUTE M AXIMUM RATINGS
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MJE700/701
MJE800/801/802/803
MJE702/703
702 TRANSISTOR
702 P TRANSISTOR
MJE700
702 Z TRANSISTOR
transistor 702
transistor k 702
BVCEO 2000
TRansistor 701
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bux23
Abstract: No abstract text available
Text: • 7 ^ 5 ^ 5 3 7 P O S A I S 7 ■ 5 S G S -T H O M S O N lailllBiQglLllETfBQHniES_ BUX23 S G S-THOMSON 3QE D NPN SILICON TRANSISTOR D E S C R IP T IO N High speed, high current, high power NPN transis tor intended for use in switching and amplifier appli
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BUX23
bux23
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ge-2 transistor
Abstract: transistor gt 322 MP 41 transistor drehkondensator transistor D 322 servicemitteilungen SERVICE-MITTEILUNGEN oszillator VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN GER-A
Text: SERVICE-MITTEILUNGEN VEB INOUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN r a d io -television AUSGABE: DATUM: 2/72 April 1972 Ersatzteilspezifikation für Koffersuper "Selena" Wir geben Ihnen nachstehend die Ersatzteilspezifikation für den Kofferempfänger "Selena" bekannt. Bitte verv/enden Sie bei der Be
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SP3-4A-20-10
ge-2 transistor
transistor gt 322
MP 41 transistor
drehkondensator
transistor D 322
servicemitteilungen
SERVICE-MITTEILUNGEN
oszillator
VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN
GER-A
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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md918 Transistor
Abstract: germanium MM2264 2N3050 MC369G
Text: TH E SEM ICO N D U CTO R DATA BOOK SUPPLEMENT 1 This is the first supplement to the 2nd Edition of the Semiconductor Data Book originally publishedin August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers intro
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MC1550G
md918 Transistor
germanium
MM2264
2N3050
MC369G
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