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    TRANSISTOR G11 Search Results

    TRANSISTOR G11 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR G11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1030mhz

    Abstract: 2TD12 HV400 SM200 1090mhz
    Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed


    Original     		PDF HVV1011-040 HVV1214-075 HVV1011-040 1030-1090MHz, HVV1011-035 1030mhz 2TD12 HV400 SM200 1090mhz

    Y22 SOT23

    Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor


    Original     		PDF PMBTH10 PMBTH10 PMBTH81. MSB003 Y22 SOT23 MSB003 g21 Transistor B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11

    PMBTH10

    Abstract: MSB003 PMBTH81 MRA566
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH81 PNP 1 GHz switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 1 GHz switching transistor FEATURES PINNING • Low cost


    Original     		PDF PMBTH81 PMBTH81 PMBTH10. MSB003 PMBTH10 MSB003 MRA566

    MBB400

    Abstract: MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation


    Original     		PDF BF747 MSB003 MBB400 MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23

    mbb400

    Abstract: BF747 MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation


    Original     		PDF BF747 MSB003 mbb400 BF747 MSB003

    70V AC to 48v dc 40 amp converter circuit diagram

    Abstract: No abstract text available
    Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller FEATURES DESCRIPTIO U The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode


    Original     		PDF LT3781 350kHz 300kHz LT3710 LTC3728 550kHz, 3781f 70V AC to 48v dc 40 amp converter circuit diagram

    GHM3045

    Abstract: FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3
    Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller U FEATURES DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode


    Original     		PDF LT3781 350kHz LTC1929 300kHz LT3710 LTC3728 550kHz, 3781f GHM3045 FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3

    ltc 3781

    Abstract: 2kw mosfet half bridge converter 2kw planar transformer theory planar transformer theory P1976 LT 450 mbr 2kw power supply C3781 WE MIDCOM 0.25w resistor 1/4
    Text: Final Electrical Specifications LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode


    Original     		PDF LT3781 350kHz LTC1922-1 LTC1929 300kHz LTC3728 550kHz, 3781i ltc 3781 2kw mosfet half bridge converter 2kw planar transformer theory planar transformer theory P1976 LT 450 mbr 2kw power supply C3781 WE MIDCOM 0.25w resistor 1/4

    BF547

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF


    Original     		PDF BF547 MSB003 BF547 MSB003

    B12 IC marking code

    Abstract: BF547 MSB003 Y22 SOT23 transistor y21
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF


    Original     		PDF BF547 MSB003 B12 IC marking code BF547 MSB003 Y22 SOT23 transistor y21

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. PACKAGE DRAWING Unit : mm


    Original     		PDF PA1710A PA1710AG

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. PACKAGE DRAWING Unit : mm


    Original     		PDF PA1710A PA1710AG

    XC6SLX16-CSG324

    Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
    Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller


    Original     		PDF DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL

    BF747

    Abstract: MBB400 sot23-4 marking a1
    Text: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.


    Original     		PDF BF747 BF747 MBB400 sot23-4 marking a1

    PSH10

    Abstract: MPSH10 datasheet MPSH10 MPSH81
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSH10 NPN 1 GHz general purpose switching transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1998 Aug 27 Philips Semiconductors Product specification


    Original     		PDF M3D186 MPSH10 MSB033 MPSH81. PSH10. SCA60 125104/00/04/pp8 PSH10 MPSH10 datasheet MPSH10 MPSH81

    z144

    Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
    Text: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the


    Original     		PDF CA3127 CA3127 500MHz. z144 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22

    Untitled

    Abstract: No abstract text available
    Text: LT1681 Dual Transistor Synchronous Forward Controller DESCRIPTIO FEATURES U High Voltage: Operation Up to 72V Synchronizable Operating Frequency and Output Switch Phase for Multiple Controller Systems Fixed Frequency Operation to 350kHz Adaptive and Adjustable Blanking


    Original     		PDF LT1681 350kHz TC3714 LTC3716 1681f

    planar transformer theory P1976

    Abstract: planar transformer theory GHM3045X7R222K-GC 2kw boost 2-phase 2kw mosfet DO1608C-472 LT1681 MURS120T3 SUD40N10-25 VP5-1200
    Text: LT1681 Dual Transistor Synchronous Forward Controller DESCRIPTIO U FEATURES High Voltage: Operation Up to 72V Synchronizable Operating Frequency and Output Switch Phase for Multiple Controller Systems Fixed Frequency Operation to 350kHz Adaptive and Adjustable Blanking


    Original     		PDF LT1681 350kHz LTC3714 LTC3716 1681f planar transformer theory P1976 planar transformer theory GHM3045X7R222K-GC 2kw boost 2-phase 2kw mosfet DO1608C-472 LT1681 MURS120T3 SUD40N10-25 VP5-1200

    3408 diode

    Abstract: LTC3408EDD CDRH2D11 CMD4D06 JMK212BJ106MN JMK212BJ475MG LQH32CN4R7M11 LTC3408
    Text: LTC3408 1.5MHz, 600mA Synchronous Step-Down Regulator with Bypass Transistor U FEATURES DESCRIPTIO • The LTC 3408 is a high efficiency monolithic synchronous buck regulator optimized for WCDMA power amplifier applications. The output voltage can be dynamically


    Original     		PDF LTC3408 600mA 600mA 300MHz LTC5505-1: 28dBm 18dBm, LTC5505-2: 32dBm 12dBm, 3408 diode LTC3408EDD CDRH2D11 CMD4D06 JMK212BJ106MN JMK212BJ475MG LQH32CN4R7M11 LTC3408

    CA3246M

    Abstract: CA3246 CA3246M96 850e 610E CA3227 CA3227E CA3227M CA3227M96 SPICE 2G6
    Text: CA3227, CA3246 Data Sheet High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz September 1998 File Number 1345.4 Features • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . . . >3GHz • Five Transistors on a Common Substrate


    Original     		PDF CA3227, CA3246 CA3227 CA3246 CA3246M CA3246M96 850e 610E CA3227E CA3227M CA3227M96 SPICE 2G6

    AF239

    Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
    Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.


    OCR Scan     		PDF A23Sb05 AF239 Q60106-X239 T1-0221) transistor h5c AF 239 0406H F239 Q60106-X239 WTV4 AAO-4A

    AFY16

    Abstract: Germanium Transistor 71lb 21b22
    Text: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.


    OCR Scan     		PDF AFY16 AFY16 18A4DIN41876 Q60106 f-200 Germanium Transistor 71lb 21b22

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier PD-9.722A IRGAC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGAC30U

    IRGMVC50UD

    Abstract: No abstract text available
    Text: International Ek ]Rectifier PD-9.825 IRGMVC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz Switching-loss rating includes


    OCR Scan     		PDF IRGMVC50U 20kHz IRGMVC50UD IRGMVC50UU O-258 4ASS452 MIL-S-19500 IRGMVC50UD