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    TRANSISTOR FT NPN 4V 5MA Search Results

    TRANSISTOR FT NPN 4V 5MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FT NPN 4V 5MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1120A 2SC5646A RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=1.5dB typ f=2GHz High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) Low-voltage operation


    Original     		PDF ENA1120A 2SC5646A 10GHz A1120-9/9

    2SC3927

    Abstract: No abstract text available
    Text: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA V V(BR)CEO IC=10mA 550min V VCE=4V, IC=5A 10 to 28 10(Pulse15) A hFE IB 5 A VCE(sat) PC 120(Tc=25°C) W VBE(sat) Tj 150 °C fT –55 to +150


    Original     		PDF 2SC3927 100max 550min Pulse15) 105typ MT-100 2SC3927

    2SC3851

    Abstract: 2SC3851A FM20
    Text: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB


    Original     		PDF 2SC3851/3851A 2SA1488/A) 100max 60min 80min to320 15typ 60typ 2SC3851 2SC3851A FM20

    2SC3852A

    Abstract: 2sc3852 FM20 3852-A DSA0016508
    Text: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IC 3 A V(BR)CEO VEB=6V V µA 100max IC=25mA 60min 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ


    Original     		PDF 2SC3852/3852A 100max 60min 80min 500min 15typ 50typ O220F) 2SC3852 2SC3852A 2SC3852A FM20 3852-A DSA0016508

    2SC3851

    Abstract: 2SC3851A FM20 DSA0016507
    Text: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB


    Original     		PDF 2SC3851/3851A 2SA1488/A) 100max 60min 80min to320 15typ 60typ O220F) 2SC3851 2SC3851A FM20 DSA0016507

    2SC3852A

    Abstract: 2sc3852 FM20 transistor 2sc3852
    Text: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO 80 VCB= IC 3 A V(BR)CEO VEB=6V 100 V µA 100max 60min IC=25mA 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A


    Original     		PDF 2SC3852/3852A 100max 60min 80min 500min 15typ 50typ 10max 2SC3852A 2SC3852 2SC3852A 2sc3852 FM20 transistor 2sc3852

    2sc4024

    Abstract: FM20 DSA0016508
    Text: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IEBO VEB=15V 10max µA V(BR)CEO IC=25mA 50min V VCE=4V, IC=1A 300 to 1600 3 A VCE(sat) IC=5A, IB=0.1A 0.5max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 24typ MHz Tj 150 °C COB VCB=10V, f=1MHz


    Original     		PDF 2SC4024 O220F) 10max 50min 24typ 150typ 100x100x2 50x50x2 2sc4024 FM20 DSA0016508

    t6790

    Abstract: ZDT6790 zetex t6790 100MA 45 V NPN ic1a FZT690 DSA003726
    Text: SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6790 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6790 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 45 -50


    Original     		PDF ZDT6790 OT223) T6790 500mA, FZT690 -10mA, -500mA, -50mA, 50MHz t6790 ZDT6790 zetex t6790 100MA 45 V NPN ic1a DSA003726

    C3679 equivalent

    Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
    Text: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.


    Original     		PDF T01EE0 H1-T01EE0-0107020SB C3679 equivalent transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		PDF n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493

    Untitled

    Abstract: No abstract text available
    Text: DCX LO-R1 H COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors Lead-Free Device CXXYM Mechanical Data · · · · · · Case: SOT-563, Molded Plastic


    Original     		PDF OT-563 OT-563, J-STD-020A MIL-STD-202, com/datasheets/ap02007 DS30429

    10KW

    Abstract: 22KW DCX122LH DCX122TH DCX142JH DCX142TH Transistor FT TO NPN 4V 5mA
    Text: SPICE MODELS: DCX122LH DCX142JH DCX122TH DCX142TH Pb DCX LO-R1 H Lead-free COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction SOT-563 A Built-In Biasing Resistors


    Original     		PDF DCX122LH DCX142JH DCX122TH DCX142TH OT-563 OT-563 J-STD-020C DS30429 10KW 22KW DCX142TH Transistor FT TO NPN 4V 5mA

    10KW

    Abstract: 22KW DCX122LH DCX122TH DCX142JH DCX142TH J-STD-020A
    Text: SPICE MODELS: DCX122LH DCX142JH DCX122TH DCX142TH DCX LO-R1 H COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors Lead-Free Device


    Original     		PDF DCX122LH DCX142JH DCX122TH DCX142TH OT-563 OT-563, J-STD-020A MIL-STD-202, DCX122LH DCX142JH 10KW 22KW DCX142TH J-STD-020A

    20M diode zener

    Abstract: 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original     		PDF LDTDG12GPT1G 500mA SC-89 463C-01 463C-02. 20M diode zener 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection

    NPN PNP sot-563

    Abstract: Surface mount NPN/PNP complementary transistor DCX122LH DCX122TH DCX142JH DCX142TH DDCX122LH DDCX142JH
    Text: DCX LO-R1 H COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR NE W P RO DUC T Features • • • • Epitaxial Planar Die Construction Built-In Biasing Resistors Lead Free By Design/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5)


    Original     		PDF OT-563 DCX122LH DCX142JH DCX122TH DCX142TH DS30429 NPN PNP sot-563 Surface mount NPN/PNP complementary transistor DCX122LH DCX122TH DCX142JH DCX142TH DDCX122LH DDCX142JH

    2SC6053

    Abstract: No abstract text available
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC6053 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC6053 is a mini package resin sealed silicon NPN epitaxial type transistor designed with high collector current, small VCE sat .


    Original     		PDF 2SC6053 2SC6053 650mA SC-59 O-236

    102k1k

    Abstract: 20M diode zener LDTDG12GPLT1G
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original     		PDF LDTDG12GPLT1G 500mA OT-23 102k1k 20M diode zener LDTDG12GPLT1G

    dual transistor marking code 012

    Abstract: DCX122LU DCX122LU-7 DCX122TU DCX142JU DCX142TU J-STD-020A marking code vl
    Text: DCX LO-R1 U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors Lead-Free Device SOT-363 A CXX YM Dim Min Max A 0.10 0.30 B 1.15 1.35


    Original     		PDF OT-363 OT-363 OT-363, J-STD-020A MIL-STD-202, DS30425 150mW dual transistor marking code 012 DCX122LU DCX122LU-7 DCX122TU DCX142JU DCX142TU J-STD-020A marking code vl

    Y 363 transistor

    Abstract: DCX122LU DCX122LU-7 DCX122TU DCX142JU DCX142TU marking code vl transistor PNP 5 w
    Text: DCX LO-R1 U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction SOT-363 A Built-In Biasing Resistors Available in Lead Free/RoHS Compliant Version (Note 3) CXX YM


    Original     		PDF OT-363 OT-363 J-STD-020C MIL-STD-202, DS30425 150mW Y 363 transistor DCX122LU DCX122LU-7 DCX122TU DCX142JU DCX142TU marking code vl transistor PNP 5 w

    DCX122LU

    Abstract: DCX122LU-7-F DCX122TU DCX142JU DCX142TU
    Text: DCX LO-R1 U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction SOT-363 A Built-In Biasing Resistors Lead Free/RoHS Compliant (Note 3) CXX YM Mechanical Data


    Original     		PDF OT-363 OT-363 J-STD-020C MIL-STD-202, DS30425 DCX122LU DCX122LU-7-F DCX122TU DCX142JU DCX142TU

    Untitled

    Abstract: No abstract text available
    Text: DCX LO-R1 H COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NE W P RO DUC T Features • • • • Epitaxial Planar Die Construction Built-In Biasing Resistors Lead Free By Design/RoHS Compliant (Note 3)


    Original     		PDF OT-563 DCX122LH DCX142JH DCX122TH DCX142TH DS30429

    Diode marking CODE 5M

    Abstract: transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)


    Original     		PDF LDTDG12GPWT1G 500mA Diode marking CODE 5M transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code

    2sc4809

    Abstract: No abstract text available
    Text: Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 1.6±0.15 Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 3 V Collector current


    Original     		PDF 2SC4809 2sc4809

    S4 2A

    Abstract: PU3117 PU4117 PU4417 Ffjp
    Text: Power Transistor Arrays PU3117, PU4117, PU4417 PU3117, PU4117, PU4417 Package Dim ensions PU3117 Unit! m m Silicon NPN Triple-Diffused Planar Type 4.2max. 20. 5max. Power Am plifier, Switching 0.8 ~ 0.25 • Features 0 . 5 - 0.15 , ! I « i.fl .0. 23 ~ — 2.54 : . 3.2 '


    OCR Scan     		PDF PU3117, PU4117, PU4417 PU3117: PU4117: PU4117 S4 2A PU3117 PU4417 Ffjp