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    TRANSISTOR FREQUENCY 1.5GHZ GAIN 20 DB Search Results

    TRANSISTOR FREQUENCY 1.5GHZ GAIN 20 DB Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FREQUENCY 1.5GHZ GAIN 20 DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR NPN 5GHz

    Abstract: 2SC4805 transistor frequency 1.5GHz gain 20 dB
    Text: Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SC4805 TRANSISTOR NPN 5GHz 2SC4805 transistor frequency 1.5GHz gain 20 dB

    2SC3904

    Abstract: transistor frequency 1.5GHz gain 20 dB
    Text: Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 +0.2 ● 0.65±0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SC3904 2SC3904 transistor frequency 1.5GHz gain 20 dB

    XP05543

    Abstract: No abstract text available
    Text: Composite Transistors XP05543 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 1 6 2 5 3 4 0 to 0.1 2SC3904 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● High transition frequency fT.


    Original     		PDF XP05543 2SC3904 XP05543

    2sc2570

    Abstract: 2SC2570A IC GA-08 2SC2570A-T PA33
    Text: DATA SHEET NPN SILICON TRANSISTOR 2SC2570A HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA


    Original     		PDF 2SC2570A 2SC2570A 2SC2570A-T 500-pcs 2sc2570 IC GA-08 2SC2570A-T PA33

    2SC4805

    Abstract: No abstract text available
    Text: Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SC4805 2SC4805

    2SC3904

    Abstract: No abstract text available
    Text: Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 +0.2 ● 0.65±0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SC3904 2SC3904

    XN6543

    Abstract: 2SC3904 9y marking NPN
    Text: Composite Transistors XN6543 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification 2GHz band 2.8 –0.3 +0.25 1.5 –0.05 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage of


    Original     		PDF XN6543 2SC3904 XN6543 2SC3904 9y marking NPN

    TA4020FT

    Abstract: 60GHz transistor 60Ghz TESQ
    Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT ○ UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 High Gain: • Lead free article |S21e| =15.0dB (@ f=1.5GHz)


    Original     		PDF TA4020FT TA4020FT 60GHz transistor 60Ghz TESQ

    Untitled

    Abstract: No abstract text available
    Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT Unit: mm ○ UHF LOW NOISE AMPLIFIER APPLICATION 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 NF=0.95dB (@ f=1.5GHz) 2 • High Gain: • Lead free article


    Original     		PDF TA4020FT

    60Ghz

    Abstract: TA4020FT rf transistor frequency 1.5GHz gain 20 dB
    Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT Unit: mm ○ UHF LOW NOISE AMPLIFIER APPLICATION 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 NF=0.95dB (@ f=1.5GHz) 2 • High Gain: • Lead free article


    Original     		PDF TA4020FT 60Ghz TA4020FT rf transistor frequency 1.5GHz gain 20 dB

    2SC3904

    Abstract: No abstract text available
    Text: Composite Transistors XP05543 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 1.25±0.1 0.65 High transition frequency fT. Two elements incorporated into one package. 6 2 5 3 4 • Absolute Maximum Ratings Parameter


    Original     		PDF XP05543 2SC3904

    Untitled

    Abstract: No abstract text available
    Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET  25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original     		PDF BFP405 OT343

    RF TRANSISTOR 10GHZ

    Abstract: BFP405 10GHz oscillator RF TRANSISTOR 10GHZ low noise TRANSISTOR NPN 5GHz BGA420 BFP405 ALs 2n2222+spice+model
    Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET  25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original     		PDF BFP405 OT343 RF TRANSISTOR 10GHZ BFP405 10GHz oscillator RF TRANSISTOR 10GHZ low noise TRANSISTOR NPN 5GHz BGA420 BFP405 ALs 2n2222+spice+model

    Untitled

    Abstract: No abstract text available
    Text: BFP405 Low Noise Silicon Bipolar RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz 1 Outstanding Gms = 23 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free package


    Original     		PDF BFP405 AEC-Q101 OT343

    9y marking

    Abstract: 2SC3904 XN06543 XN6543
    Text: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification (2GHz band) 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage


    Original     		PDF XN06543 XN6543) 2SC3904 9y marking 2SC3904 XN06543 XN6543

    9y marking

    Abstract: 2SC3904 XN06543 XN6543
    Text: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SC3904 x 2 elements ■ Absolute Maximum Ratings 0 to 0.1 ● (Ta=25˚C) Parameter


    Original     		PDF XN06543 XN6543) 2SC3904 9y marking 2SC3904 XN06543 XN6543

    2SC5363

    Abstract: transistor frequency 1.5GHz gain 20 dB
    Text: Transistor 2SC5363 Tentative Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SC5363 transistor frequency 1.5GHz gain 20 dB

    a1091 transistor

    Abstract: No abstract text available
    Text: Ordering number : ENA1091A 2SC5490A RF Transistor 10V, 30mA, fT=8GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ


    Original     		PDF ENA1091A 2SC5490A A1091-7/7 a1091 transistor

    60Ghz

    Abstract: TA4020FT
    Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT ○ UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 High Gain: • Lead free article |S21e| =15.0dB (@ f=1.5GHz)


    Original     		PDF TA4020FT 60Ghz TA4020FT

    2SC5490

    Abstract: ic 7415 an
    Text: Ordering number:ENN6289 NPN Epitaxial Planar Silicon Transistor 2SC5490 UHF to S Band Low-Noise Amplifier Applications Package Dimensions unit:mm 2159 [2SC5490] 0.3 1.4 0.25 0.1 1 0.45 1.4 3 0.8 • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).


    Original     		PDF ENN6289 2SC5490 2SC5490] S21e2 11GHz 2SC5490 ic 7415 an

    2SC5490

    Abstract: ENN6289 TA 8644
    Text: Ordering number:ENN6289 NPN Epitaxial Planar Silicon Transistor 2SC5490 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz).


    Original     		PDF ENN6289 2SC5490 S21e2 11GHz 2SC5490] 2SC5490 ENN6289 TA 8644

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz F = 1.5 dB at 900MHz


    OCR Scan     		PDF 900MHz BFP196W OT-343 Q62702-F1576 900MHz

    st zo 607

    Abstract: ZO 607 MA ZO 607 MA 135 zo 607 transistor zo 607 0124 Z0 607 MN ZO 607 transistor 2SC5275 B/B/CQ 643
    Text: Ordering number: EN5185 2SC5275 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f = 1GHz . : NF = 1.4dB typ (f= 1.5GHz). • High gain: I S21e I 2= lOdB typ (f= 1.5GHz). • High cutoff frequency : fp = 11GHz typ.


    OCR Scan     		PDF EN5185 2SC5275 10dBtyp st zo 607 ZO 607 MA ZO 607 MA 135 zo 607 transistor zo 607 0124 Z0 607 MN ZO 607 transistor B/B/CQ 643

    transistor cq 529

    Abstract: 2SC5245 51842 CQ 734 G TRANSISTOR cq 802
    Text: Ordering number:EN 5184A SAMO N0.5184A i 2SC5245 NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f= 1GHz . : NF = 1.4dB typ (f = 1.5GHz). • High gain : I S21e I 2= lOdB typ (f= 1.5GHz).


    OCR Scan     		PDF 2SC5245 transistor cq 529 51842 CQ 734 G TRANSISTOR cq 802