2sC1923 transistor
Abstract: 2sc1923 10ID IY TRANSISTOR
Text: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be
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2SC1923
2sC1923 transistor
2sc1923
10ID
IY TRANSISTOR
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IY TRANSISTOR
Abstract: 2sc1923 2sC1923 transistor 10ID
Text: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be
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2SC1923
IY TRANSISTOR
2sc1923
2sC1923 transistor
10ID
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2sC1923 transistor
Abstract: 2sc1923 common base amplifier circuit common emitter amplifier IY TRANSISTOR The 2002 is a COMMON BASE transistor 10ID FEI 30
Text: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be
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2SC1923
2sC1923 transistor
2sc1923
common base amplifier circuit
common emitter amplifier
IY TRANSISTOR
The 2002 is a COMMON BASE transistor
10ID
FEI 30
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2sc1923
Abstract: 10ID
Text: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be
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2SC1923
2sc1923
10ID
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Untitled
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 97Q 376-2022 (212)227-6008 FAX: (973) 3764860 SILICON PLANEX* TRANSISTOR Quality Semi-Conductors 2N3056A *.IMV»WOUJ-I . 2N3056A is a silicon NPN PLANEX* transistor, designed to provide a high breakdown voltage with a low saturation resistance. This
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2N3056A
2N3056A
VCB-90
150ma
500ma
Vce-10
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BA 92 SAMSUNG
Abstract: transistor BA 92 samsung transistor Ba 92 transistor samsung
Text: SAMSUNG SEMI CONDUCTOR INC MPS6651 IME D J 7^4145 0007334 T PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR •'Collector-feinJtterifoltág*: Vcto=25V. • CollectorDlssipatlon: Pc max =625mW ; ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPS6651
625mW
T-29-21
BA 92 SAMSUNG
transistor BA 92 samsung transistor
Ba 92 transistor samsung
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L82 NEC
Abstract: transistor mp
Text: SILICON TRANSISTOR 2SC3631-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION 2SC3631-Z is designed for High Voltage Switching, especially in PACKAGE DIMENSIONS in millimeters} Hybrid Integrated Circuits. FEA T U R ES • High Voltage V ceo = 400 V
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2SC3631-Z
2SC3631-Z
2SA1412-Z
IEl-1209)
L82 NEC
transistor mp
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1000C
Abstract: 2SB1149 diode dumper
Text: NEC DESCRIPTION PNP SILICON DARLINGTON TRANSISTOR 2SB1149 The 2SB1149 is a darlington transistor built-in dumper diode PACKAGE DIMENSIONS at E-C. in millimeters inches It is suitable for use to operate from IC without predfiver, such 8.5 MAX. (0.334 MAX.)
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2SB1149
2SB1149
1000C
1000-lB
1000C
diode dumper
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BU2508-AX
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
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BU2508AX
100PD
/PD25C
BU2508-AX
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BUK483-60A
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE I> • 711062b Q D b m ? S 7bM « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
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711002b
QDb417S
BUK483-60A
OT223
7110S2b
S0T223.
OT223.
35\im
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
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BU2522DF
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Untitled
Abstract: No abstract text available
Text: MOT OROL A SC XSTRS/R F> 4bE b3b7S5M D QQIBTB? b «M O T bT Order this data sheet By MUN2211/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN2211 MUN2212 MUN2213 Bias Resistor Transistor NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network
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MUN2211/D
MUN2211
MUN2212
MUN2213
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it4142
Abstract: it414 BCX71H MMBT5086
Text: S A MS UN G SE MIC OND UCT OR INC BCX71H IME D | 0GQ7225 M | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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t4142
BCX71H
MMBT5086
OT-23
it4142
it414
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
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BU2525DW
IE-02
1E-04
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • D5GM33Ö G0037S7 3 ■ ALGR T-91-01 P R O C E S S N J26L Process NJ26L N-Channel Junction Field-Effect Transistor Process NJ26L is an N-channel junction fietdeffect transistor designed for general-purpose, lownolse, high-galn applications not requiring high
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D5GM33Ã
G0037S7
T-91-01
NJ26L
NJ26L
-R009
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ksp94
Abstract: No abstract text available
Text: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO -92 • H igh C ollector-Em ittar Voltage: V C eo = -400V • Low C o llecto r-E m ilter Saturation Voltage • Com plem ent to K S P 44 ABSOLUTE MAXIMUM RATINGS TA-25t: C h a ra c te ristic
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KSP94
-400V
ksp94
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fenwal thermistor
Abstract: No abstract text available
Text: fei BENCHMARQ _ DV2005L1 Fast Charge Development System Control of PNP Power Transistor Features >- bq2005 fast charge control evaluation and development ► Charge current sourced from two on-board frequency-modulated linear regulators up to 3.0 A
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DV2005L1
bq2005
DV2005L1
RL0703-5744-103-81
W7-K53LA0-AO1
103AT-2
fenwal thermistor
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MJ12005
Abstract: MJ12005 MOTOROLA MR918 4229P-L00-3C8 POT CORE 4229P-L00 4229PL00-3C8 motorola mj12005 Motorola mr918
Text: MOTOROLA SC XSTRS/R F 15E D I L3t?aSM QOflSQTS 7 | MOTOROLA SEM ICO N DUCTO R TECHNICAL DATA 8 AMPERE NPN SILICON POWER TRANSISTOR HORIZONTAL DEFLECTION TRANSISTOR . . . s p e c ific a lly designed fo r use in d e fle c tio n c irc u its . • V c E X = 1500 V
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MR918
4229P-L00-3C8
MJ12005
MJ12005 MOTOROLA
MR918
POT CORE 4229P-L00
4229PL00-3C8
motorola mj12005
Motorola mr918
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tc1665
Abstract: TC-1665A transistor mp
Text: SILICON TRANSISTOR 2SC3632-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2 S C 363 2-Z is des ig n e d fo r High V o ltag e S w itching, especially in PACKAGE DIMENSIONS in m illim eters Hybrid In te g rate d Circuits. FEATURES • H ig h V o lta g e V ceo = 600 V
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2SC3632-Z
fEI-1209)
3632-Z
tc1665
TC-1665A
transistor mp
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2SK852
Abstract: jb 5531 JE 33 26L55 T1IG
Text: NEC o ^ n y ^ Ju n ctio n Field Effect Transistor i & m t e w m m N-Channel Silicon Junction Field-Effect Transistor Audio Frequency Amplifier f t W f t High gm < ntzshSi f i j f t o ¡ S ita . V o gdo> r - M i -c r < + •/ 7 u > = 10 V, V<; s = 0 1.25 + 0.1
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Untitled
Abstract: No abstract text available
Text: P ft BC817 S E M IC O N D U C T O R FORWARD INTERNATIONAL. ELECTRONICS LTD, KPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR P a c k a g e fT l> 9 2 A B S O L U T E M A X IM U M R A T IN G S a t T am b = 25*C Sym bol R a tin g U irft
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BC817
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BFT92
Abstract: BFQ51 BFQ52 X3A-BFT92
Text: 1^53^31 0035210 feiTt M A P X Philips Semiconductors Product specification PNP 5 GHz wideband transistor crystal X3A-BFT92 N AUER PH ILI PS/DISCRETE DESCRIPTION bRE 3 MECHANICAL DATA PNP crystal used in BFQ51 SOT37 , BFQ52 (TO-72) and BFT92 (SOT23). Crystals are supplied as whole
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BFQ51
BFQ52
BFT92
X3A-BFT92
X3A-BFT92
URV-3-5-52/733
BFT92
BFQ51
BFQ52
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