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    TRANSISTOR F 463 Search Results

    TRANSISTOR F 463 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F 463 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P364

    Abstract: tyco igbt V23990-P364-F
    Text: V23990-P364-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


    Original     		PDF V23990-P364-F Tj150 D81359 P364 tyco igbt V23990-P364-F

    TO-92 CASE MPSA06

    Abstract: F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06
    Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70


    Original     		PDF MPSA06 TO-92 CASE MPSA06 F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06

    bf199 equivalent

    Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199
    Text: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40


    Original     		PDF BF199 bf199 equivalent bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199

    m64084

    Abstract: m64084a M64084AGP KSS tcxo 12.8MHz Cordless telephone system block diagram M64884 DUAL XTAL OSCILLATOR IC TCXO KSS MITSUBISHI LOT NO. CODE mitsubishi Lot No. Year code
    Text: MITSUBISHI ICs Cordless Telephone M64884FP Transistor for VCO,1st IF MIX,2-multiple circuit built-in 500MHz/1GHz Dual PLL Synthesizer 1.DESCRIPTION The M64884FP is a 2-sy stem 1-chip PLL f requency s y nthesizer IC designed of Analog cordless telephone f or North


    Original     		PDF M64884FP 500MHz/1GHz M64884FP 500MHz M64884 m64084 m64084a M64084AGP KSS tcxo 12.8MHz Cordless telephone system block diagram M64884 DUAL XTAL OSCILLATOR IC TCXO KSS MITSUBISHI LOT NO. CODE mitsubishi Lot No. Year code

    MJE340

    Abstract: MJE340 datasheet MJE340 b c e
    Text: MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical


    Original     		PDF MJE340 O-126 MJE340 MJE340 datasheet MJE340 b c e

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in ­


    OCR Scan     		PDF b3b72SH 2N6166

    transistor 7905

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R 4bE F D • b3b?2S4 00=14326 2 « flO T b -r-3 2 > " 0 = > MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA T h e R F L in e 4 W — 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 V olt large-signal power amplifier applications


    OCR Scan     		PDF

    C459

    Abstract: 2N1613 1613 14 AMB-45
    Text: Nicht für Neuentwicklungen Not for new developm ents 2 N 1613 'W Silizium-NPN-Planar-Transistor Silicon NPN Planar Transistor Anwendungen: HF-Verstärker und schnelle Schalter Applications: RF am plifiers and high speed switches Besondere Merkmale: • Hohe Sperrspannung


    OCR Scan     		PDF

    RNW transistor

    Abstract: transistor marking MK R02G
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTOR 2 3 Q 4 3 5 U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • \ Low Noise Figure, High Gain. N F = l.ld B , |S2leP = 14dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF Gai10V, 2SC4315 H07/0= RNW transistor transistor marking MK R02G

    transistor d 2389

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		PDF NE24283B NE24283B transistor d 2389

    BCY69

    Abstract: BCY 69 transistor 468
    Text: BCY 69 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILICIUM , PLANAR EPITAXIAL - LF small signal amplification low noise Amplification BP petits signaux (faible bruit) v CEO 20 V 'c 100 mA *216 (2 600 - 900 F (0,2 mA) 5 dB max Maximum power dissipation


    OCR Scan     		PDF

    NEC k 2134 transistor

    Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
    Text: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		PDF NE24283B NE24283B NEC k 2134 transistor nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612

    SD1019

    Abstract: TEA 1019 M130
    Text: H M S 'n m rtìr^ f- * r t I f l / C f S f ¡ I P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 SD1019 RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS CLASS C TRANSISTOR FREQUENCY


    OCR Scan     		PDF 152MHz 136MHz SD1019 Juncti8SP1019-09 S085D1019-10 SD1019 15mFSEMCOR C7AB220 150pF 14AWG. TEA 1019 M130

    MPS-U31

    Abstract: MPSU31 MOTOROLA an-596 DOW 340 MPS8000 an-596 MPS8001 5659065-3B MPS-U31-1
    Text: MPS-U31 SILICON NPN SILICON ANNULAR 3.5 W - 27 MHz RF TRANSISTOR RF POWER OUTPUT TRANSISTOR . . . designed for use in Citizen-Band and other high-frequency com­ munications equipm ent operating to 30 M H z. Higher breakdown voltages allow a high percentage o f up-m odulation in A M circuits.


    OCR Scan     		PDF MPS-U31 MPS8000 MPS8001 AN-S96- Dow-340 0ow-340 MPS-U31 MPSU31 MOTOROLA an-596 DOW 340 an-596 5659065-3B MPS-U31-1

    MJ12005

    Abstract: MJ12005 MOTOROLA MR918 4229P-L00-3C8 POT CORE 4229P-L00 4229PL00-3C8 motorola mj12005 Motorola mr918
    Text: MOTOROLA SC XSTRS/R F 15E D I L3t?aSM QOflSQTS 7 | MOTOROLA SEM ICO N DUCTO R TECHNICAL DATA 8 AMPERE NPN SILICON POWER TRANSISTOR HORIZONTAL DEFLECTION TRANSISTOR . . . s p e c ific a lly designed fo r use in d e fle c tio n c irc u its . • V c E X = 1500 V


    OCR Scan     		PDF MR918 4229P-L00-3C8 MJ12005 MJ12005 MOTOROLA MR918 POT CORE 4229P-L00 4229PL00-3C8 motorola mj12005 Motorola mr918

    MGF4916F

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910F Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0 F series super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		PDF MGF4910F F4310F 4910F MGF4916F

    NA 6884

    Abstract: IC AT 6884 0200E TRANSISTOR 8808 W
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M04 FEATURES HIGH GAIN BANDWIDTH: f r = 23 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    OCR Scan     		PDF OT-343 NE662M04 NE662M04 NA 6884 IC AT 6884 0200E TRANSISTOR 8808 W

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF949T1 NPN Silicon Low Noise Transistors Motorola's M R F 9 4 9 is a high perform ance N P N transistor designed for use in high gain, low noise sm all-signal amplifiers. T h e M R F 9 4 9 is well suited for low


    OCR Scan     		PDF MRF949T1 598E-16 548E-14 395E-16 00E-05 70E-13 60E-13 00E-11 00E-O9 MRF949

    MJE 13031

    Abstract: 054S1 cd 4637
    Text: PRELIMINARY DATA SHEET UPA836TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA Q2:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA


    OCR Scan     		PDF UPA836TF NE685, NE688) UPA836TF UPA836TF-T1 UPA833TF MJE 13031 054S1 cd 4637

    MRF140 equivalent

    Abstract: arco capacitors 262
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics


    OCR Scan     		PDF MRF140 MRF140 equivalent arco capacitors 262

    MOTOROLA circuit for mrf150

    Abstract: UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF150 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics


    OCR Scan     		PDF MRF150 MRF150 MOTOROLA circuit for mrf150 UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor

    KCD03

    Abstract: bx1462 1C16A HPA251R 31495MO
    Text: Ordering n u m b e r:EN 5033 HPA251R No.5033 N PN Triple Diffused P lanar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F e a tu re s •High speed tf typ = 100ns . ■High breakdown voltage (Vcbo —1500V).


    OCR Scan     		PDF HPA251R 100ns) QQ2G44b KCD03 bx1462 1C16A HPA251R 31495MO

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: f r = 5.5 G H z TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: N E 02133 • HIGH INSERTION POWER GAIN: |S21e |2 = 10 dB at 1 GHz


    OCR Scan     		PDF NE97833 NE97833 2SA1978 NE97833-T1

    s parameters 4ghz

    Abstract: transistor GaAs FET low noise 4Ghz CCT-C3 MU1520 NE46300 NE46385 4ghz s parameters transistor NE46383 S110 transistor RF MESFET S parameters
    Text: NEC 53C 6 4 2 7 4 1 % N E C/ CA LI F O R NI A N E C / S3 CALIFORNIA 00806 D E | t.4E ?m 4 ODDOflOti fi W~ MICROWAVE TRANSISTOR SERIES NE463 D u a l G a t e G a A s M E S F E T FEATURES DESCRIPTION AND APPLICATIONS • T h e N E 4 6 3 is a dual-gate G a A s F E T designed fo r lo w n oise


    OCR Scan     		PDF NE463 45GHz 12GHz NE463 s parameters 4ghz transistor GaAs FET low noise 4Ghz CCT-C3 MU1520 NE46300 NE46385 4ghz s parameters transistor NE46383 S110 transistor RF MESFET S parameters